DG9411 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation (2.25 V to 5.5 V) Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 9 ns, tOFF: 5 ns Low Charge Injection - QINJ: 5 pC Low Power Consumption TTL/CMOS Compatible 6-Pin SC-70 Package Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 9 ns, tOFF: 5 ns), low on-resistance (rDS(on): 7 W) and small physical size (SC70), the DG9411 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9411 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9411. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Logic SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Document Number: 71347 S-02566—Rev. A, 10-Nov-00 NC NO 0 ON OFF 1 OFF ON Logic “0” v0.8 V Logic “1”w 2.4 V ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C SC70-6 DG9411DL www.vishay.com 1 DG9411 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C Power Dissipation (Packages)b 6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C SPECIFICATIONS (V+ = 2.5 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.5 V, "10%, VIN = 0.4 or 2.0 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd VNO, VNC, VCOM rDS(on) V+ = 2.25 V, VD = 1.0 V, IS = 10 mA Room Fulld 26 29 rDS(on) Flatness V+ = 2.5 V Room 10 IS(off) Switch Off Leakage Currentf ID(off) Channel-On Leakage Current f ID(on) 35 40 W V+ = 2.75 V VS = 0.5 V/1.5 V, VD = 1.5 V/0.5 V V+ = 2.75 V, VS = VD = 0.5 V/1.5 V Room Fulld –250 –3.0 250 3.0 pA nA Room Fulld –250 –3.0 250 3.0 pA nA Room Fulld –250 –3.0 250 3.0 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Cin Full Input Capacitanced Input Current IINL or IINH VIN = 0 or V+ Full 0.4 3 –1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time VD or VS = 1.5 V, RL = 300 W, W CL = 35 pF Figures 1 and 2 td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK Room Fulld 16 40 45 Room Fulld 7 23 28 ns 10 pC Room CL = 1 nF, VS = 0 V VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 12 Room 5 Room –73 Room –70 Source-Off Capacitanced CS(off) Room 7 Channel-On Capacitanced CD(on) Room 20 Drain-to-Source Capacitanced CDS(off) Room 20 VIN = 0 or V+, f = 1 MHz dB pF Power Supply Power Supply Range V+ Power Supply Currentd I+ Power Consumption PC www.vishay.com 2 2.25 0.01 VIN = 0 or V+ 2.75 V 1.0 mA 0.3 mW Document Number: 71347 S-02566—Rev. A, 10-Nov-00 DG9411 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistanced rDS(on) Flatnessd VNO, VNC, VCOM rDS(on) V+ = 2.7 V, VD = 1.5 V, IS = 10 mA Room Full 15 19 rDS(on) Flatness VS = 0 to V+, IS = 10 mA Room 7.5 W IS(off) Switch Off Leakage Current f V+ = 3.3 V, VS = 1 V/3 V, VD = 3 V/1 V ID(off) Channel-On Leakage Current f ID(on) 25 30 V+ = 3.3 V, VS = VD = 1 V/3 V Room Full –500 –4.0 500 4.0 pA nA Room Full –500 –4.0 500 4.0 pA nA Room Full –500 –4.0 500 4.0 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Cin Full Input Capacitanced Input Current IINL or IINH VIN = 0 or V+ Full 0.8 3 –1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced Drain-to-Source Capacitanced VD or VS = 2.0 V, RL = 300 W, W CL = 35 pF Figure 1 and 2 12 15 20 Room Full 6 8 10 ns 10 pC Room CL = 1 nF, VGEN = 0 V, VS = 0 V RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz CS(off) CD(on) Room Full VIN = 0 or V+, f = 1 MHz CDS(off) 1 7 Room 5 Room –73 Room –70 Room 7 Room 20 Room 20 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 71347 S-02566—Rev. A, 10-Nov-00 2.7 3.3 0.01 VIN = 0 or V+ V 1.0 mA 0.4 mW www.vishay.com 3 DG9411 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd VNO, VNC, VCOM rDS(on) V+ = 4.5 V, VD = 3 V, IS = 10 mA Room Full 7 10 rDS(on) Flatness V+ = 2.5 V Room 2 IS(off) Switch Off Leakage Current ID(off) Channel-On Leakage Current ID(on) 12 16 W V+ = 5.5 V VS = 1 V/4.5 V, VD = 4.5 V/1 V V+ = 5.5 V, VS = VD = 1 V/4.5 V Room Full –1.0 –4.0 1.0 4.0 Room Full –1.0 –4.0 1.0 4.0 Room Full –1.0 –3.0 1.0 4.5 2.4 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full Input Current IINL or IINH VIN = 0 or V+ Full 0.8 3 –1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced Drain-to-Source Capacitanced VD or VS = 3 V, RL = 300 W, W CL = 35 pF Figure 1 and 2 9 11 15 Room Full 5 7 9 ns 10 pC Room CL = 1 nF, VS = 0 V VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz CS(off) CD(on) Room Full VIN = 0 or V+, f = 1 MHz CDS(off) 1 4 Room 5 Room –73 Room –70 Room 7 Room 20 Room 20 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 4.5 5.5 0.01 VIN = 0 or V+ V 1.0 mA 0.6 mW Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 4 Document Number: 71347 S-02566—Rev. A, 10-Nov-00 DG9411 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. Analog and Power Voltage rDS(on) vs. Analog Voltage and Temperature 30 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) 30 25 V+ = 2.5 V 20 15 V+ = 3 V 10 V+ = 5 V 5 0 V+ = 2.5 V 25 20 85_C 15 25_C –40_C V+ = 5 V 5 –40_C 25_C 0 0 1 2 3 4 5 0 1 2 VD – Analog Voltage (V) 3 4 5 VD – Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 100 10 mA V+ = 5 V VIN = 0 V 1 mA 10 I+ – Supply Current (nA) I+ – Supply Current (nA) 85_C 10 1 0.1 100 mA 10 mA 1 mA 100 pA 10 pA 0.01 –60 –40 –20 0 20 40 60 80 1 pA 100 120 140 1 10 100 1K 10 K 1M 100 K 10 M Input SwitchingFrequency (Hz) Temperature (_C) Leakage Current vs. Temperature Leakage vs. Analog Voltage 100 100 K V+ = 5 V 0 ID(off) Leakage Current (pA) Leakage Current (pA) 10 K V+ = 5 V VD, VS = 5 V 1K ID(on) 100 10 –100 ID(off) IS(off) –200 ID(on) –300 –400 –500 –600 1 –50 –25 0 25 50 75 Temperature (_C) Document Number: 71347 S-02566—Rev. A, 10-Nov-00 100 125 150 0 1 2 3 4 5 6 VD, VS – Analog Voltage (V) www.vishay.com 5 DG9411 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature and Supply Voltage Crosstalk and Off Isolation vs. Frequency 25 100 Off Isolation 25_C 20 80 85_C 15 OIRR, XTALK (dB) tON, tOFF – Switching Time (nS) tON –40_C tOFF 25_C 10 85_C 5 60 40 2.5 3.0 3.5 4.0 V+ = 3 V RL = 50 W 20 –40_C 0 2.0 Crosstalk 4.5 5.0 0 10 K 5.5 100 K V+ – Supply Voltage (V) 10 M 100 M Frequency (Hz) Input Switching Threshold vs. Supply Voltage Insertion Loss vs. Frequency 3.0 0 ËËËËËËË ËËËËËËË ËËËËËËË ËËËËËËË ËËËËËËË ËËËËËËË 2.0 1.5 1.0 0.5 –2 –3 –4 –5 0.0 0 1 2 3 4 5 V+ = 3 V RL = 50 W –1 Insertion Loss (dB) 2.5 VT – Threshold Voltage (V) 1M 6 –6 7 10 K 1K V+ – Supply Voltage (V) 100 K 1M 10 M 100 M 1G Frequency (Hz) Charge Injection vs. Analog Voltage 6 CL = 1 nF 4 Charge Injection (pC) V+ = 2.5 V 2 V+ = 3 V 0 –2 V+ = 5 V –4 –6 0 1 2 3 4 5 6 VD – Analog Voltage (V) www.vishay.com 6 Document Number: 71347 S-02566—Rev. A, 10-Nov-00 DG9411 New Product Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ NO or NC Switch Input tr t 20 ns tf t 20 ns 50% 0V Switch Output COM VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 W GND CL 35 pF 0V tOFF tON Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT + V COM ǒ RL R L ) R ON Ǔ FIGURE 1. Switching Time V+ Logic Input V+ 0V COM NO VNO tr <5 ns tf <5 ns 3V VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL = 1 nF 3V IN On Off On GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 71347 S-02566—Rev. A, 10-Nov-00 www.vishay.com 7 DG9411 New Product Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0V, 2.4 V IN COM NC or NO Off Isolation + 20 log RL GND V NCńNO V COM Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 8 Document Number: 71347 S-02566—Rev. A, 10-Nov-00