NSR0240V2T1G, NSVR0240V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features Very Low Forward Voltage Drop − 480 mV @ 100 mA Low Reverse Current − 0.2 mA @ 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 200 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 4 pF AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a Pb−Free Device* http://onsemi.com 40 VOLT SCHOTTKY BARRIER DIODE SOD−523 CASE 502 PLASTIC 1 CATHODE 2 ANODE MARKING DIAGRAM Typical Applications LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 2 AC = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) Markets AC M G G *Date Code orientation position may vary depending upon manufacturing location. Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS ORDERING INFORMATION MAXIMUM RATINGS Rating Package Shipping† NSR0240V2T1G SOD−523* (Pb−Free) 3,000 / Tape & Reel NSVR0240V2T1G SOD−523* (Pb−Free) 3,000 / Tape & Reel Device Symbol Value Unit Reverse Voltage VR 40 Vdc *This package is inherently Pb−Free. Forward Continuous Current (DC) IF 250 mA Non−Repetitive Peak Forward Surge Current IFSM 2.0 A ESD Rating: Human Body Model Machine Model ESD †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 2 Class A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 2 1 Publication Order Number: NSR0240V2T1/D NSR0240V2T1G, NSVR0240V2T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25C RqJA PD 600 200 C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25C RqJA PD 300 400 C/W mW TJ, Tstg −55 to +150 C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr DC Current Source + − 750 mH 50 W Output Pulse Generator 0.1 mF 0V IF Min Typ Max − − − − 0.2 0.5 0.55 2.0 10 − − − 345 485 580 390 550 700 − 4.0 − − 3.0 − tr 10% 90% VR 0.1 mF tp Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time << trr. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 Unit mA mV pF ns NSR0240V2T1G, NSVR0240V2T1G IF, FORWARD CURRENT (mA) 1000 100 125C 10 150C 1 0.1 0.01 0.001 85C 0 25C −40C 0.2 0.1 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) Figure 2. Forward Voltage Ir, REVERSE CURRENT (mA) 1000 150C 100 125C 85C 10 1 25C 0.1 0.01 0.001 0.0001 −40C 0.00001 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 3. Leakage Current CT, TOTAL CAPACITANCE (pF) 14 12 TA = 25C 10 8 6 4 2 0 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance http://onsemi.com 3 40 45 NSR0240V2T1G, NSVR0240V2T1G PACKAGE DIMENSIONS SOD−523 CASE 502−01 ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE HE SIDE VIEW 2X L RECOMMENDED SOLDERING FOOTPRINT* 2X 2X 1.80 0.48 L2 2X 0.40 BOTTOM VIEW PACKAGE OUTLINE DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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