NTLLD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN (3 mm x 3 mm) Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX Q1 Top FET 30 V 17.4 mW @ 10 V Q2 Bottom FET 30 V 13.3 mW @ 10 V 11 A 25 mW @ 4.5 V 13 A 20 mW @ 4.5 V D1 (2, 3, 4, 9) Applications • DC−DC Converters • System Voltage Rails • Point of Load (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 D1 3 D1 2 5 S2 9 10 D1 S1/D2 6 S2 7 S2 G1 1 8 G2 (Bottom View) MARKING DIAGRAM 1 4901 A Y WW G WDFN8 CASE 511BP 1 4901 AYWWG G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 1 1 Publication Order Number: NTLLD4901NF/D NTLLD4901NF MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 8.3 TA = 85°C TA = 25°C 6.0 Q2 9.6 TA = 85°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C 6.9 Q1 PD Q2 Q1 Steady State ID TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C 13 Q1 PD Q1 ID Pulsed Drain Current TA = 25°C tp = 10 ms 6.3 A 4.5 Q1 PD Q2 Operating Junction and Storage Temperature W 5.5 4.0 Q2 TA = 85°C TA = 25 °C 3.23 3.27 TA = 85°C Power Dissipation RqJA (Note 2) A 9.1 Q2 TA = 25°C W 11 8 Q2 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) 1.82 1.88 TA = 85°C TA = 25°C A Q1 W 0.81 IDM 65 TJ, TSTG −55 to +150 °C IS 4.2 A Q2 Q1 0.80 A 70 Q2 Source Current (Body Diode) Q1 Q2 Drain to Source DV/DT 6.0 dV/dt 6 V/ns mJ Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 9.0 Apk, L = 0.3 mH, RG = 25 W) Q1 EAS 12 Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 9.5 Apk, L = 0.3 mH, RG = 25 W) Q2 EAS 13.5 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2 http://onsemi.com 2 NTLLD4901NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) FET Symbol Value Q1 RqJA 68.8 Q2 Junction−to−Ambient – Steady State (Note 4) 66.4 Q1 RqJA 156.4 Q2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) Unit °C/W 153.9 Q1 RqJA 38.7 Q2 38.2 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 4. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Drain−to−Source Breakdown Voltage Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Zero Gate Voltage Drain Current Q1 Typ Max Unit OFF CHARACTERISTICS Q2 Q2 30 V(BR)DSS / TJ IDSS Q2 Gate−to−Source Leakage Current Q1 V 15 VGS = 0 V, VDS = 24 V TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 500 VGS = 0 V, VDS = 24 V IGSS mV / °C 18 VGS = 0 V, VDS = ±20 V ±100 Q2 mA nA ±100 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient Q1 Drain−to−Source On Resistance Q1 Q2 VGS(TH) / TJ RDS(on) Q2 Forward Transconductance Q1 gFS 1.2 2.2 1.2 2.2 mV / °C 4.5 4.0 VGS = 10 V ID = 9 A 14 17.4 VGS = 4.5 V ID = 9 A 20 25 VGS = 10 V ID = 11 A 11 13.3 VGS = 4.5 V ID = 11 A 16 20 VDS = 1.5 V, ID = 9 A Q2 16 V mW S 18 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Capacitance Q1 Q2 Q1 Q2 Q1 Q2 605 CISS COSS 660 VGS = 0 V, f = 1 MHz, VDS = 15 V 190 325 102 CRSS 17.5 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 pF NTLLD4901NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Q1 Q2 Q1 Q2 Q1 Q2 1.1 VGS = 4.5 V, VDS = 15 V; ID = 9 A QGS Q2 Q2 5.0 QG(TH) Q1 Q1 6.5 QG(TOT) nC 1.9 2.0 3.2 QGD QG(TOT) 1.1 1.46 VGS = 10 V, VDS = 15 V; ID = 9 A 12 nC 10.6 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 tr Q2 Q1 Q2 8.0 td(ON) 7.5 7.2 VGS = 4.5 V, VDS = 15 V, ID = 9 A, RG = 3.0 W td(OFF) Q1 ns 11 11.6 3.3 tf Q2 11.2 1.9 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 4.2 td(ON) tr 4.3 11.6 VGS = 10 V, VDS = 15 V, ID = 9 A, RG = 3.0 W td(OFF) 11.4 ns 14.1 14.3 2.0 tf 1.3 DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 3 A Q1 VSD Forward Voltage Q2 VGS = 0 V, IS = 2 A TJ = 25°C 0.80 TJ = 125°C 0.65 TJ = 25°C 0.50 TJ = 125°C 0.45 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 4 1.2 0.80 V NTLLD4901NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time Q1 Q2 Q1 Charge Time Q2 Q1 Discharge Time Q2 Reverse Recovery Charge Q1 Q2 17.9 tRR 23.3 9.0 ta VGS = 0 V, dIS/dt = 100 A/ms, IS = 3 A tb 11.3 ns 9.0 12 8.0 QRR 12 nC PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.36 LS 0.36 0.054 LD TA = 25°C LG 0.054 1.3 1.3 0.8 RG 0.8 nH nH nH W 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTLLD4901NFTWG Package Shipping† WDFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTLLD4901NF TYPICAL CHARACTERISTICS − Q1 3.6 V 3.8 V 25 3.4 V VDS = 5 V 25 ID, DRAIN CURRENT (A) 4.5 V thru 4 V 3.2 V 7.5 V 20 3.0 V 15 2.8 V 10 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) VGS = 2.2 V 2.6 V 20 15 TJ = 125°C 10 0 1 2 3 4 0 5 TJ = −55°C ID = 10 A 40 35 30 25 20 15 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.0 3.5 4.0 23 22 VGS = 4.5 V T = 25°C 21 20 19 18 17 16 15 14 13 VGS = 10 V 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1E−05 ID = 9 A VGS = 10 V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −50 TJ = 150°C 1E−06 IDSS, LEAKAGE (A) 1.5 1.4 2.5 Figure 2. Transfer Characteristics 45 1.7 1.6 2.0 Figure 1. On−Region Characteristics 50 2 1.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 55 10 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Resistance RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 5 2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 30 10 V TJ = 125°C 1E−07 1E−08 1E−09 TJ = 25°C 1E−10 −25 0 25 50 75 100 125 150 1E−11 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 30 NTLLD4901NF TYPICAL CHARACTERISTICS − Q1 C, CAPACITANCE (pF) 700 500 400 300 Coss 200 Crss 100 0 100 5 10 15 20 25 30 tf tr 4 Qgs Qgd ID = 9 A TJ = 25°C VGS = 4.5 V VDD = 15 V 3 2 1 0 0 2 4 6 8 10 12 8 VGS = 0 V 7 TJ = 25°C 6 5 4 3 2 1 1 10 0 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 5 9 100 10 ms 10 100 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.1 0.01 7 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(off) 1 8 Figure 7. Capacitance Variation td(on) 1 QT 9 Qg, TOTAL GATE CHARGE (nC) VGS = 10 V VDD = 15 V ID = 10 A 10 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 0 t, TIME (ns) TJ = 25°C VGS = 0 V Ciss 600 VGS, GATE−TO−SOURCE VOLTAGE (V) 800 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 ms 10 ms dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 14 12 ID = 9 A 10 8 6 4 2 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 40 55 70 85 100 115 130 145 160 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 7 NTLLD4901NF THERMAL RESISTANCE, RqJA(t) (°C/W) TYPICAL CHARACTERISTICS − Q1 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 8 1 10 100 1000 NTLLD4901NF TYPICAL CHARACTERISTICS − Q2 3.6 V 30 3.4 V 7.5 V 25 3.2 V 20 3.0 V 15 2.8 V VGS = 2.2 V 10 2.6 V 2.4 V 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 1 2 3 4 25 20 TJ = 25°C 15 10 0 TJ = 125°C 5 TJ = −55°C 1 20 10 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.5 20 T = 25°C VGS = 4.5 V 18 16 14 12 VGS = 10 V 10 8 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 16. On−Resistance vs. Gate−to−Source Resistance Figure 17. On−Resistance vs. Drain Current and Gate Voltage 1E−02 ID = 11 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 3.5 Figure 15. Transfer Characteristics 30 1.2 1.0 0.8 0.6 −50 3 Figure 14. On−Region Characteristics 40 1.4 2.5 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 50 1.6 1.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 10 A 2 30 5 60 0 VDS = 5 V 35 4.5 thru 4.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 35 40 3.8 V 10 V ID, DRAIN CURRENT (A) 40 −25 0 25 50 75 100 125 150 TJ = 125°C 1E−03 1E−04 TJ = 25°C 1E−05 1E−06 VGS = 0 V 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 18. On−Resistance Variation with Temperature Figure 19. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 9 30 NTLLD4901NF Ciss Coss 100 Crss 10 1 TJ = 25°C VGS = 0 V 0 t, TIME (ns) 100 5 10 15 20 25 30 td(off) tr tf 1 10 Qgs 4 Qgd ID = 9 A TJ = 25°C VGS = 4.5 V VDD = 15 V 3 2 1 0 0 2 4 7 VGS = 0 V 6 TJ = 25°C 8 6 10 5 4 3 2 1 0 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 22. Resistive Switching Time Variation vs. Gate Resistance Figure 23. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 5 8 10 ms 10 100 ms 0 V < VGS < 20 V SINGLE PULSE TC = 25°C 0.1 0.01 7 6 Figure 21. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 1 8 Figure 20. Capacitance Variation td(on) 1 QT 9 Qg, TOTAL GATE CHARGE (nC) VGS = 10 V VDD = 15 V ID = 10 A 10 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS − Q2 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 ms 10 ms dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 14 12 ID = 9.5 A 10 8 6 4 2 0 25 Figure 24. Maximum Rated Forward Biased Safe Operating Area 40 55 70 85 100 115 130 145 160 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 25. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 10 NTLLD4901NF THERMAL RESISTANCE, RqJA(t) (°C/W) TYPICAL CHARACTERISTICS − Q2 100 D = 0.5 0.2 0.1 0.05 0.02 1 0.01 10 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (sec) Figure 26. Thermal Response http://onsemi.com 11 1 10 100 1000 NTLLD4901NF PACKAGE DIMENSIONS WDFN8 3x3, 0.65P CASE 511BP ISSUE A A D PIN ONE REFERENCE 0.15 C L DETAIL A ALTERNATE CONSTRUCTIONS E ÇÇÇ ÉÉ ÇÇÇ ÉÉÉ ÉÉ ÇÇ EXPOSED Cu TOP VIEW A DETAIL B 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.05 AND 0.15 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. POSITIONAL TOLERANCE APPLIES TO ALL OF THE EXPOSED PADS. L L1 ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ 0.15 C B MOLD CMPD A3 A1 A3 DETAIL B ALTERNATE CONSTRUCTIONS 0.08 C A1 0.10 M D2 DETAIL A 1 SEATING PLANE C SIDE VIEW NOTE 4 C A B NOTE 5 K 4 2.60 1.80 5X 0.10 G 8 5 e e/2 8X M 0.50 C A B 0.43 NOTE 5 E2 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.30 0.50 3.00 BSC 2.35 2.55 3.00 BSC 0.90 1.10 0.40 0.60 0.65 BSC 0.43 BSC 0.68 BSC 0.20 −−− 0.20 0.40 0.00 0.15 RECOMMENDED SOLDERING FOOTPRINT* E3 G2 DIM A A1 A3 b D D2 E E2 E3 e G G2 K L L1 0.68 1.15 b 0.10 M C A B 0.05 M C 3.30 NOTE 3 BOTTOM VIEW 0.65 1 0.65 PITCH 6X 0.50 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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