TI OPA842IDBVT

OPA842
OPA
842
SBOS267A – NOVEMBER 2002 – REVISED DECEMBER 2002
Wideband, Low Distortion, Unity-Gain Stable,
Voltage-Feedback OPERATIONAL AMPLIFIER
FEATURES
DESCRIPTION
● UNITY-GAIN BANDWIDTH: 400MHz
The OPA842 provides a level of speed and dynamic range
previously unattainable in a monolithic op amp. Using unitygain stable, voltage-feedback architecture with two internal
gain stages, the OPA842 achieves exceptionally low harmonic distortion over a wide frequency range. The “classic”
differential input provides all the familiar benefits of precision
op amps, such as bias current cancellation and very low
inverting current noise compared with wideband current
differential gain/phase performance, low-voltage noise, and
high output current drive make the OPA842 ideal for most
high dynamic range applications.
● GAIN-BANDWIDTH PRODUCT: 200MHz
● LOW INPUT VOLTAGE NOISE: 2.6nV/√Hz
● VERY LOW DISTORTION: –93dBc (5MHz)
● HIGH OPEN-LOOP GAIN: 110dB
● FAST 12-BIT SETTLING: 22ns (0.01%)
● LOW DC VOLTAGE OFFSET: 300µV Typical
● PROFESSIONAL LEVEL DIFF GAIN/PHASE ERROR:
0.003%/0.008°
Unity-gain stability makes the OPA842 particularly suitable
for low-gain differential amplifiers, transimpedance amplifiers, gain of +2 video line drivers, wideband integrators, and
low-distortion Analog-to-Digital Converter (ADC) buffers.
Where higher gain or even lower harmonic distortion is
required, consider the OPA843—a higher-gain bandwidth
and lower-noise version of the OPA842.
APPLICATIONS
● ADC/DAC BUFFER DRIVER
● LOW DISTORTION “IF” AMPLIFIER
● ACTIVE FILTER CONFIGURATION
● LOW-NOISE DIFFERENTIAL RECEIVER
OPA842 RELATED PRODUCTS
● HIGH-RESOLUTION IMAGING
● TEST INSTRUMENTATION
● PROFESSIONAL AUDIO
● OPA642 UPGRADE
SINGLES
INPUT NOISE
VOLTAGE (nV/ √Hz )
GAIN-BANDWIDTH
PRODUCT (MHz)
OPA843
OPA846
OPA847
2.0
1.1
0.8
800
2500
3700
+5V
+5V
2kΩ
RS
0.1µF 24.9Ω
VIN
50Ω
REFT
(+3V)
2kΩ
IN
OPA842
100pF
ADS850
14-Bit
10MSPS
–5V
402Ω
2kΩ
IN
0.1µF
402Ω
(+2V)
REFB
2kΩ
(+1V)
VREF
SEL
AC-Coupled to 14-Bit ADS850 Interface
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 2002, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
www.ti.com
ELECTROSTATIC
DISCHARGE SENSITIVITY
ABSOLUTE MAXIMUM RATINGS(1)
Power Supply ............................................................................... ±6.5VDC
Internal Power Dissipation ...................................... See Thermal Analysis
Differential Input Voltage .................................................................. ±1.2V
Input Voltage Range ............................................................................ ±VS
Storage Voltage Range: D, DBV ................................... –40°C to +125°C
Lead Temperature (soldering, 10s) ............................................... +300°C
Junction Temperature (TJ) ............................................................ +175°C
ESD Rating (Human Body Model) .................................................. 2000V
(Charge Device Model) ............................................... 1500V
(Machine Model) ........................................................... 200V
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR(1)
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
SO-8
D
–40°C to +85°C
OPA842
OPA842ID
Rails, 100
"
"
"
"
OPA842IDR
Tape and Reel, 2500
SOT23-5
DBV
–40°C to +85°C
OAQI
OPA842IDBVT
Tape and Reel, 250
"
"
"
"
OPA842IDBVR
Tape and Reel, 3000
OPA842
"
OPA842
"
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
PIN CONFIGURATIONS
8
NC
Inverting Input
2
7
+VS
Noninverting Input
3
6
Output
–VS
4
5
NC
Output
1
–VS
2
Noninverting Input
3
NC = No Connection
5
+VS
4
Inverting Input
1
OAQI
3
1
SOT
2
NC
Top View
4
SO
5
Top View
Pin Orientation/Package Marking
2
OPA842
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SBOS267A
ELECTRICAL CHARACTERISTICS: VS = ±5V
Boldface limits are tested at +25°C.
At TA = +25°C, VS = ±5V, RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted. See Figure 1 for AC performance.
OPA842ID, OPA842IDBV
TYP
PARAMETER
AC PERFORMANCE (see Figure 1)
Closed-Loop Bandwidth (VO = 100mVp-p)
Gain-Bandwidth Product
Bandwidth for 0.1dB Gain Flatness
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
2-Tone, 3rd-Order Intercept
Input Voltage Noise
Input Current Noise
Rise-and-Fall Time
Slew Rate
Settling Time to 0.01%
0.1%
1.0%
Differential Gain
Differential Phase
DC PERFORMANCE(4)
Open-Loop Voltage Gain (AOL)
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Input Offset Current Drift
INPUT
Common-Mode Input Range (CMIR)(5)
Common-Mode Rejection (CMRR)
Input Impedance
Differential-Mode
Common-Mode
OUTPUT
Output Voltage Swing
Current Output, Sourcing
Closed-Loop Output Impedance
POWER SUPPLY
Specified Operating Voltage
Maximum Operating Voltage
Max Quiescent Current
Min Quiescent Current
Power-Supply Rejection Ratio
(+PSRR, –PSRR)
THERMAL CHARACTERISTICS
Specified Operating Range: D, DBV
Thermal Resistance, θJA
D
SO-8
DBV SOT23-5
CONDITIONS
+25°C
G = +1, RF = 25Ω
G = +2
G = +5
G = +10
350
150
45
21
200
56
105
G = +2, RL = 100Ω, VO = 100mVp-p
G = +1, RL = 100Ω, RF = 25Ω
G = +2, f = 5MHz, VO = 2Vp-p
RL = 100Ω
RL = 500Ω
RL = 100Ω
RL = 500Ω
G = +2, f = 10MHz
f > 1MHz
f > 1MHz
0.2V Step
2V Step
2V Step
2V Step
2V Step
G = +2, NTSC, RL = 150Ω
G = +2, NTSC, RL = 150Ω
–80
–94
–97
–93
44
2.6
2.7
2.3
400
22
15
9
0.003
0.008
VO = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
MIN/MAX OVER TEMPERATURE
+25°C(1)
0°C to
70°C
–40°C to
+85°C(2)
105
30
15
136
101
29
14
135
100
29
14
135
–78
–92
–96
–91
–77
–91
–95
–90
–76
–90
–94
–90
2.8
2.8
3.3
300
3.0
2.9
3.4
250
3.1
3.0
3.5
225
19.6
10.2
20.3
11.3
21.3
12.5
100
96
±1.4
±4
–36
25
±1.15
±2
±2.9
84
110
±0.30
±1.2
–20
–35
±0.35
±1.0
VCM = ±1V, Input Referred
±3.2
95
±3.0
VCM = 0V
VCM = 0V
14 || 1
3.1 || 1.2
RL > 1kΩ, Positive Output
RL > 1kΩ, Negative Output
RL = 100Ω, Positive Output
RL = 100Ω, Negative Output
VO = 0V
G = +2, f = 1kHz
3.2
–3.7
3.0
–3.5
±100
0.00038
85
UNITS
MIN/
MAX
TEST
LEVEL(3 )
MHz
MHz
MHz
MHz
MHz
MHz
MHz
typ
min
min
min
min
typ
typ
C
B
B
B
B
C
C
dBc
dBc
dBc
dBc
dBm
nV/√Hz
pA/√Hz
ns
V/µs
ns
ns
ns
%
deg
max
max
max
max
typ
max
max
max
min
typ
max
max
typ
typ
B
B
B
B
C
B
B
B
B
C
B
B
C
C
92
±1.5
±4
–37
25
±1.17
±2
dB
mV
µV/°C
µA
nA/°C
µA
nA/°C
min
max
max
max
max
max
max
A
A
B
A
B
A
B
±2.8
82
V
dB
min
min
A
A
kΩ || pF
MΩ || pF
typ
typ
C
C
V
V
V
V
mA
Ω
min
min
min
min
min
typ
A
A
A
A
A
C
3.0
–3.5
2.8
–3.3
±90
±2.9
–3.4
2.7
–3.2
±85
±2.8
–3.3
2.6
–3.1
±80
±6
±6
22.5
18.3
V
V
mA
mA
typ
min
max
min
C
A
A
A
85
dB
min
A
–40 to +85
°C
typ
C
125
150
°C
°C
typ
typ
C
C
±5
VS = ±5V
VS = ±5V
20.2
20.2
20.8
19.6
±6
22.2
19.1
|VS| = 4.5V to 5.5V, Input Referred
100
90
88
Junction-to-Ambient
NOTES: (1) Junction temperature = ambient temperature for +25°C min/max specifications. (2) Junction temperature = ambient at low temperature limit: junction
temperature = ambient +23°C at high temperature limit for over temperature min/max specifications. (3) Test Levels: (A) 100% tested at +25°C. Over-temperature
limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive outof-node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits.
OPA842
SBOS267A
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3
TYPICAL CHARACTERISTICS: VS = ±5V
At TA = 25°C, G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted.
NONINVERTING SMALL-SIGNAL
FREQUENCY RESPONSE
3
G = +1
RF = 25Ω
0
G = +2
–3
VO = 0.1Vp-p
G = +5
–6
G = +10
–9
0
Normalized Gain (3dB/div)
–12
G = –1
–3
–12
G = –10
–15
See Figure 1
See Figure 2
–18
–18
1
10
100
500
1
100
Frequency (MHz)
NONINVERTING LARGE-SIGNAL
FREQUENCY RESPONSE
INVERTING LARGE-SCALE
FREQUENCY RESPONSE
500
9
0.1Vp-p
0.5Vp-p
1.0Vp-p
6
3
RL = 100Ω
G = +2V/V
0
RL = 100Ω
G = –2V/V
RG = 200Ω
3
VO = 2Vp-p
VO = 5Vp-p
–3
0.1Vp-p
1Vp-p
2Vp-p
6
0
Gain (3dB/div)
Normalized Gain (3dB/div)
10
Frequency (MHz)
9
5Vp-p
–3
–6
–9
–6
–12
–9
–15
See Figure 1
See Figure 2
–12
–18
1
10
100
500
1
10
100
NONINVERTING PULSE RESPONSE
INVERTING PULSE RESPONSE
1.2
G = +2
200
Right Scale
100
0.8
0.4
0
Small Signal ± 100mV
Left Scale
–100
–200
0
–0.4
–0.8
Output Voltage (100mV/div)
Frequency (MHz)
Output Voltage (400mV/div)
Frequency (MHz)
Large Signal ± 1V
Output Voltage (100mV/div)
G = –5
–9
–15
G = –2
RG = 200Ω
Large Signal ± 1V
200
500
1.2
0.8
Right Scale
100
0.4
0
0
Small Signal ± 100mV
Left Scale
–100
–200
–0.4
–0.8
–1.2
See Figure 1
–1.2
See Figure 2
Time (5ns/div)
4
G = –2
RG = RS = 50Ω
VO = 0.1Vp-p
RF Adjusted
–6
Time (5ns/div)
OPA842
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SBOS267A
Output Voltage (400mV/div)
Normalized Gain (3dB/div)
3
INVERTING SMALL-SIGNAL
FREQUENCY RESPONSE
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)
At TA = 25°C, G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted.
1MHz HARMONIC DISTORTION vs LOAD RESISTANCE
5MHz HARMONIC DISTORTION vs LOAD RESISTANCE
–85
–75
VO = 2Vp-p
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
VO = 2Vp-p
–80
2nd-Harmonic
–85
–90
–95
–90
–95
2nd-Harmonic
–100
–105
3rd-Harmonic
3rd-Harmonic
See Figure 1
See Figure 1
–110
–100
100
150
200
250
300
350
400
450
100
500
150
200
HARMONIC DISTORTION vs FREQUENCY
350
400
450
500
HARMONIC DISTORTION vs OUTPUT VOLTAGE
VO = 2Vp-p
RL = 200Ω
G = +2
–70
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
300
–80
–60
–80
2nd-Harmonic
–90
3rd-Harmonic
–100
RL = 200Ω
F = 5MHz
–85
–90
2nd-Harmonic
–95
3rd-Harmonic
–100
–105
See Figure 1
See Figure 1
–110
–110
0.5
1
10
0.1
20
1
10
Output Voltage Swing (Vp-p)
Frequency (MHz)
HARMONIC DISTORTION vs NONINVERTING GAIN
HARMONIC DISTORTION vs INVERTING GAIN
–70
–70
VO = 2Vp-p
RL = 200Ω
F = 5MHz
–80
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
250
Load Resistance (Ω)
Load Resistance (Ω)
2nd-Harmonic
–90
3rd-Harmonic
–100
VO = 2Vp-p
RL = 200Ω
F = 5MHz
RF = 402Ω
–80
2nd-Harmonic
–90
–100
3rd-Harmonic
See Figure 2
See Figure 1
–110
–110
1
10
1
Noninverting Gain (V/V)
OPA842
SBOS267A
10
Inverting Gain |V/V|
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5
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)
At TA = 25°C, G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted.
2-TONE, 3RD-ORDER
INTERMODULATION INTERCEPT
INPUT VOLTAGE AND CURRENT NOISE
50
100
PI
50Ω
Intercept Point (+dBm)
Voltage Noise (nV√Hz)
Current Noise (pA√Hz)
45
10
Current Noise
2.7pA/√Hz
Voltage Noise
50Ω
OPA842
PO
50Ω
402Ω
40
402Ω
35
30
25
2.6nV/√Hz
20
1
102
103
104
105
106
5
107
10
15
20
Frequency (Hz)
RECOMMENDED RS vs CAPACITIVE LOAD
35
40
45
50
3
Normalized Gain to Capacitive Load (dB)
RS (Ω)
10
1
10
30
FREQUENCY RESPONSE vs CAPACITIVE LOAD
100
1
25
Frequency (MHz)
100
0
C = 10pF
–3
C = 47pF
C = 22pF
–6
C = 100pF
–9
VI
RS
VO
50Ω OPA842
–12
CL
1kΩ
402Ω
–15
402Ω
–18
1k
10
100
Capacitive Load (pF)
Frequency (MHz)
GAIN = +1 FLATNESS
PULSE RESPONSE G = +1
500
Large Signal ± 1V
Output Voltage (100mV/div)
0.1
Gain (0.1dB/div)
0
VO = 0.1Vp-p
RF = 25Ω
RL = 100Ω
–0.1
–0.2
–0.3
–0.4
200
1.2
0.8
Right Scale
100
0.4
0
–100
0
Small Signal
Left Scale
–200
–0.4
–0.8
–0.5
–1.2
–0.6
0
25
50
75
100
125
150
175
200
Time (2ns/div)
Frequency (25MHz/div)
6
OPA842
www.ti.com
SBOS267A
Output Voltage (400mV/div)
0.2
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)
At TA = 25°C, G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted.
CMRR AND PSRR vs FREQUENCY
OPEN-LOOP GAIN AND PHASE
120
20log (AOL)
CMRR
80
+PSRR
60
40
80
–60
∠AOL
60
20
–90
40
–120
20
–150
0
–180
–20
102
103
104
105
106
107
108
–210
101
102
103
104
106
107
108
Frequency (Hz)
Frequency (Hz)
OUTPUT VOLTAGE AND CURRENT LIMITATIONS
CLOSED-LOOP OUTPUT IMPEDANCE
vs FREQUENCY
4
Output Impedance (Ω)
1
2
RL = 100
1
0
1W Internal
Power Limit
RL = 25
RL = 50
–1
1W Internal
Power Limit
–2
0.1
0.01
0.001
0.0001
–3
–4
–0.15
0.00001
–0.10
–0.05
0
0.05
0.10
0.15
102
103
104
IO (mA)
NONINVERTING OVERDRIVE RECOVERY
Output
Left Scale
RL = 100Ω
G=2
See Figure 1
2
1
4
3
2
1
0
0
–2
–1
0
–2
–1
–4
–2
–6
–3
–6
–4
–8
Time (40ns/div)
RL = 100Ω
G=2
See Figure 2
2
0
–8
108
4
Input
Right Scale
6
3
Output Voltage (2V/div)
4
107
INVERTING OVERDRIVE RECOVERY
Input Voltage (1V/div)
6
106
8
4
Input
Right Scale
105
Frequency (Hz)
8
2
109
10
3
–4
–2
Output
Left Scale
–3
–4
Time (40ns/div)
OPA842
SBOS267A
105
Input Voltage (1V/div)
101
Output Voltage (2V/div)
–30
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7
Open-Loop Phase (°)
100
100
0
VO (V)
0
–PSRR
Open-Loop Gain (dB)
Common-Mode Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
120
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)
At TA = 25°C, G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted.
SETTLING TIME
VIDEO DIFFERENTIAL GAIN/DIFFERENTIAL PHASE
0.250
0.008
0.100
0.050
0.000
–0.050
–0.100
0.006
0.06
DG Negative Video
DP Negative
Video
0.004
0.04
DP Positive Video
0.002
0.02
DG Positive Video
–0.150
–0.200
See Figure 1
0
–0.250
5
10
15
20
25
30
35
40
45
0
50
1
2
3
TYPICAL DC DRIFT OVER TEMPERATURE
SUPPLY AND OUTPUT CURRENT vs TEMPERATURE
12.5
Input Offset Voltage
Left Scale
0
–0.5
–12.5
Input Bias Current
24
115
Output Current (5mA/div)
0.5
120
Input Bias and Offset Current (µA)
25
100x (Input Offset Current)
Right Scale
0
5
Video Loads
Time (ns)
1
4
22
Supply Current
110
20
Right Scale
105
18
100
16
Sink/Source Output Current
95
14
Left Scale
90
12
85
10
Supply Current (2mA/div)
0
Input Offset Voltage (mV)
Differential Phase (°)
Differential Gain (%)
Percent of Final Value (%)
0.150
0.08
G=2
VO = 2V step
RL = 100Ω
G=2
0.200
Right Scale
–1
–50
–25
0
25
50
75
100
–25
125
80
–50
–25
Ambient Temperature (°C)
0
25
50
75
100
8
125
Ambient Temperature (°C)
COMMON-MODE AND
DIFFERENTIAL INPUT IMPEDANCE
COMMON-MODE INPUT RANGE AND
OUTPUT SWING vs SUPPLY VOLTAGE
107
6
Common-Mode Impedance
106
Input Impedance (Ω)
Voltage Range (V)
4
2
0
±Voltage Output
±Voltage Input
–2
104
Differential Impedance
103
–4
102
–6
±3
±4
±5
±6
102
Supply Voltage (±V)
8
105
103
104
105
106
107
108
109
Frequency (Hz)
OPA842
www.ti.com
SBOS267A
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)
At TA = 25°C, G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted.
DIFFERENTIAL PERFORMANCE
TEST CIRCUIT
DIFFERENTIAL SMALL-SIGNAL
FREQUENCY RESPONSE
3
+5V
GD = 1
OPA842
GD =
VI
RG
–5V
402Ω
RG
402Ω
Normalized Gain (dB)
0
402Ω
RL
RG
VO
GD = 2
–3
GD = 5
–6
GD = 10
–9
–12
+5V
–15
OPA842
–18
1
10
100
–5V
Frequency (MHz)
DIFFERENTIAL LARGE-SIGNAL
FREQUENCY RESPONSE
DIFFERENTIAL DISTORTION vs
LOAD RESISTANCE
9
–85
G=2
F = 5MHz
VO = 4Vp-p
6
Harmonic Distortion (dBc)
Gain (dB)
0.2Vp-p
1Vp-p
2Vp-p
GD = 2
RL = 400Ω
3
0
–3
5Vp-p
–6
8Vp-p
–9
–90
–95
2nd-Harmonic
–100
–105
3rd-Harmonic
–12
–110
10
100
50
500
100
150
DIFFERENTIAL DISTORTION vs FREQUENCY
250
300
350
400
450
500
DIFFERENTIAL DISTORTION vs OUTPUT VOLTAGE
–60
–80
RL = 400Ω
RL = 400Ω
VO = 4Vp-p
GD = 2
–85
Harmonic Distortion (dBc)
–70
200
Load Resistance (Ω)
Frequency (MHz)
Harmonic Distortion (dBc)
500
GD = 2
–80
–90
2nd-Harmonic
–100
F = 5MHz
–90
–95
2nd-Harmonic
–100
–105
3rd-Harmonic
–110
3rd-Harmonic
–115
–110
1
10
100
1
Frequency (MHz)
OPA842
SBOS267A
10
Output Voltage Swing (Vp-p)
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9
APPLICATIONS INFORMATION
+5V
WIDEBAND VOLTAGE-FEEDBACK OPERATION
The OPA842’s combination of speed and dynamic range is
easily achieved in a wide variety of application circuits,
providing that simple principles of good design practice are
observed. For example, good power-supply decoupling, as
shown in Figure 1, is essential to achieve the lowest possible
harmonic distortion and smooth frequency response.
Proper PC board layout and careful component selection will
maximize the performance of the OPA842 in all applications,
as discussed in the following sections of this data sheet.
Figure 1 shows the gain of +2 configuration used as the basis
for most of the typical characteristics. Most of the curves
were characterized using signal sources with 50Ω driving
impedance and with measurement equipment presenting
50Ω load impedance. In Figure 1, the 50Ω shunt resistor at
the VI terminal matches the source impedance of the test
generator while the 50Ω series resistor at the VO terminal
provides a matching resistor for the measurement equipment
load. Generally, data sheet specifications refer to the voltage
swing at the output pin (VO in Figure 1). The 100Ω load,
combined with the 804Ω total feedback network load, presents the OPA842 with an effective load of approximately
90Ω in Figure 1.
+5V
+VS
0.1µF
+
2.2µF
50Ω Source
VIN
50Ω
RS 50Ω Load
50Ω
VO
OPA842
RF
402Ω
RG
402Ω
0.1µF
+
2.2µF
–VS
–5V
FIGURE 1. Gain of +2. High-frequency application and
characterization circuit.
WIDEBAND INVERTING OPERATION
Operating the OPA842 as an inverting amplifier has several
benefits and is particularly useful when a matched 50Ω
source and input impedance is required. Figure 2 shows the
inverting gain of –2 circuit used as the basis of the inverting
mode typical characteristics.
10
0.1µF
0.1µF
50Ω Source
RT
147Ω
VO
+
2.2µF
50Ω
50Ω Load
OPA843
RG
200Ω
RF
402Ω
VI
RM
66.5Ω
0.1µF
+
2.2µF
–5V
FIGURE 2. Inverting G = –2 Specifications and Test Circuit.
In the inverting case, just the feedback resistor appears as
part of the total output load in parallel with the actual load.
For the 100Ω load used in the typical characteristics, this
gives a total load of 80Ω in this inverting configuration. The
gain resistor is set to get the desired gain (in this case 200Ω
for a gain of –2) while an additional input matching resistor
(RM) can be used to set the total input impedance equal to
the source if desired. In this case, RM = 66.5Ω in parallel with
the 200Ω gain setting resistor gives a matched input impedance of 50Ω. This matching is only needed when the input
needs to be matched to a source impedance, as in the
characterization testing done using the circuit of Figure 2.
The OPA842 offers extremely good DC accuracy as well as
low noise and distortion. To take full advantage of that DC
precision, the total DC impedance looking out of each of the
input nodes must be matched to get bias current cancellation. For the circuit of Figure 2, this requires the 147Ω resistor
shown to ground on the noninverting input. The calculation
for this resistor includes a DC-coupled 50Ω source impedance along with RG and RM. Although this resistor will provide
cancellation for the bias current, it must be well decoupled
(0.1µF in Figure 2) to filter the noise contribution of the
resistor and the input current noise.
As the required RG resistor approaches 50Ω at higher gains,
the bandwidth for the circuit in Figure 2 will far exceed the
bandwidth at that same gain magnitude for the noninverting
circuit of Figure 1. This occurs due to the lower “noise gain”
for the circuit of Figure 2 when the 50Ω source impedance is
included in the analysis. For instance, at a signal gain of –8
(RG = 50Ω, RM = open, RF = 402Ω) the noise gain for the
circuit of Figure 2 will be 1 + 402Ω/(50Ω + 50Ω) = 5 due to
the addition of the 50Ω source in the noise gain equation.
This gives considerable higher bandwidth than the
noninverting gain of +8. Using the 200MHz gain bandwidth
product for the OPA842, an inverting gain of –8 from a 50Ω
source to a 50Ω RG will give approximately 40MHz bandwidth, whereas the noninverting gain of +8 will give 25MHz.
OPA842
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SBOS267A
BUFFERING HIGH-PERFORMANCE ADCs
To achieve full performance from a high dynamic range ADC,
considerable care must be exercised in the design of the input
amplifier interface circuit. The example circuit on the front
page shows a typical AC-coupled interface to a very high
dynamic range converter. This AC coupled example allows
the OPA842 to be operated using a signal range that swings
symmetrically around ground (0V). The 2Vp-p swing is then
level-shifted through the blocking capacitor to a midscale
reference level, which is created by a well-decoupled resistive
divider off the converter’s internal reference voltages. To
have a negligible effect on the rated Spurious-Free Dynamic
Range (SFDR) of the converter, the amplifier’s SFDR should
be at least 10dB greater than the converter. The OPA842 has
no effect on the rated distortion of the ADS850, given its 82dB
SFDR at 2Vp-p, 5MHz. The > 92dB SFDR for the OPA842 in
this configuration will not degrade the converter.
Successful application of the OPA842 for ADC driving requires careful selection of the series resistor at the amplifier
output, along with the additional shunt capacitor at the ADC
input. To some extent, selection of this RC network will be
determined empirically for each model of the converter. Many
high-performance CMOS ADCs, like the ADS850, perform
better with the shunt capacitor at the input pin. This capacitor
provides low source impedance for the transient currents
produced by the sampling process. Improved SFDR is often
obtained by adding this external capacitor, whose value is
often recommended in this converter data sheet. The external capacitor, in combination with the built-in capacitance of
the ADC input, presents a significant capacitive load to the
OPA842. Without a series isolation resistor, an undesirable
peaking or loss of stability in the amplifier may result.
Since the DC bias current of the CMOS ADC input is
negligible, the resistor has no effect on overall gain or offset
accuracy. Refer to the typical characteristic “RS vs Capacitive
Load” to obtain a good starting value for the series resistor.
This will ensure flat frequency response to the ADC input.
Increasing the external capacitor value will allow the series
resistor to be reduced. Intentionally bandlimiting using this
RC network can also be used to limit noise at the converter
input.
OPA842 will provide exceptional results in video distribution
applications. Differential gain and phase measure the change
in overall small-signal gain and phase for the color sub-carrier
frequency (3.58MHz in NTSC systems) versus changes in the
large-signal output level (which represents luminance information in a composite video signal). The OPA842, with the typical
150Ω load of a single matched video cable, shows less than
0.01%/0.01° differential gain/phase errors over the standard
luminance range for a positive video (negative sync) signal.
Similar performance would be observed for negative video
signals.
SINGLE OP AMP DIFFERENTIAL AMPLIFIER
The voltage-feedback architecture of the OPA842, with its
high Common-Mode Rejection Ratio (CMRR), will provide
exceptional performance in differential amplifier configurations. Figure 3 shows a typical configuration. The starting
point for this design is the selection of the RF value in the
range of 200Ω to 2kΩ. Lower values reduce the required RG,
increasing the load on the V2 source and on the OPA842
output. Higher values increase output noise and exacerbate
the effects of parasitic board and device capacitances. Following the selection of RF, RG must be set to achieve the
desired inverting gain for V2. Remember that the bandwidth
will be set approximately by the Gain Bandwidth Product
(GBP) divided by the noise gain (1 + RF/RG). For accurate
differential operation (i.e., good CMRR), the ratio R2/R1 must
be set equal to RF/RG.
+5V
V1
50Ω
R2
OPA842
RG
RF
V2
VO =
when
RF
(V – V2)
RG 1
R 2 RF
=
R 1 RG
–5V
FIGURE 3. High-Speed, Single Differential Amplifier.
VIDEO LINE DRIVING
Most video distribution systems are designed with 75Ω series
resistors to drive a matched 75Ω cable. In order to deliver a
net gain of 1 to the 75Ω matched load, the amplifier is
typically set up for a voltage gain of +2, compensating for the
6dB attenuation of the voltage divider formed by the series
and shunt 75Ω resistors at either end of the cable.
The circuit of Figure 1 applies to this requirement if all
references to 50Ω resistors are replaced by 75Ω values.
Often, the amplifier gain is further increased to 2.2, which
recovers the additional DC loss of a typical long cable run. This
change would require the gain resistor (RG) in Figure 1 to be
reduced from 402Ω to 335Ω. In either case, both the gain
flatness and the differential gain/phase performance of the
Usually, it is best to set the absolute values of R2 and R1
equal to RF and RG, respectively; this equalizes the divider
resistances and cancels the effect of input bias currents.
However, it is sometimes useful to scale the values of R2 and
R1 in order to adjust the loading on the driving source V1. In
most cases, the achievable low-frequency CMRR will be
limited by the accuracy of the resistor values. The 85dB
CMRR of the OPA842 itself will not determine the overall
circuit CMRR unless the resistor ratios are matched to better
than 0.003%. If it is necessary to trim the CMRR, then R2 is
the suggested adjustment point.
OPA842
SBOS267A
Power-supply decoupling not shown.
R1
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11
THREE OP AMP DIFFERENCING
(Instrumentation Topology)
The primary drawback of the single op amp differential
amplifier is its relatively low input impedances. Where high
impedance is required at the differential input, a standard
instrumentation amplifier (INA) topology may be built using
the OPA842 as the differencing stage. Figure 4 shows an
example of this, in which the two input amplifiers are packaged together as a dual voltage-feedback op amp, the
OPA2822. This approach saves board space, cost, and
power compared to using two additional OPA842 devices,
and still achieves very good noise and distortion performance due to the moderate loading on the input amplifiers.
requires its outputs terminated to a compliance voltage other
than ground for operation, then the appropriate voltage level
may be applied to the noninverting input of the OPA842.
OPA842
High-Speed
DAC
VO = ID RF
RF
CF
CD
ID
GBP → Gain Bandwidth
Product (Hz) for the OPA842
+5V
V1
OPA2822
RF1
500Ω
RG
500Ω
RF1
500Ω
ID
Power-supply decoupling not shown.
+5V
500Ω
500Ω
OPA842
VO
FIGURE 5. Wideband Low-Distortion DAC Transimpedance
Amplifier.
–5V
500Ω
500Ω
The DC gain for this circuit is equal to RF. At high frequencies, the DAC output capacitance will produce a zero in the
noise gain for the OPA842 that may cause peaking in the
closed-loop frequency response. CF is added across RF to
compensate for this noise-gain peaking. To achieve a flat
transimpedance frequency response, this pole in the feedback network should be set to:
OPA2822
V2
–5V
FIGURE 4. Wideband 3-Op Amp Differencing Amplifier.
In this circuit, the common-mode gain to the output is always
1, due to the four matched 500Ω resistors, whereas the
differential gain is set by (1 + 2RF1/RG), which is equal to 2
using the values in Figure 4. The differential to single-ended
conversion is still performed by the OPA842 output stage.
The high-impedance inputs allow the V1 and V2 sources to be
terminated or impedance matched as required. If the V1 and
V2 inputs are already truly differential, such as the output
from a signal transformer, then a single matching termination
resistor may be used between them. Remember, however,
that a defined DC signal path must always exist for the V1
and V2 inputs; for the transformer case, a center-tapped
secondary connected to ground would provide an optimum
DC operating point.
DAC TRANSIMPEDANCE AMPLIFIER
High-frequency Digital-to-Analog Converters (DACs) require
a low-distortion output amplifier to retain their SFDR performance into real-world loads. A single-ended output drive
implementation is shown in Figure 5. In this circuit, only one
side of the complementary output drive signal is used. The
diagram shows the signal output current connected into the
virtual ground-summing junction of the OPA842, which is set
up as a transimpedance stage or “I-V converter.” The unused
current output of the DAC is connected to ground. If the DAC
12
1
=
2πRF CF
GBP
4 πRF CD
(1)
which will give a corner frequency f–3dB of approximately:
f −3dB =
GBP
2πRF CD
(2)
ACTIVE FILTERS
Most active filter topologies will have exceptional performance
using the broad bandwidth and unity-gain stability of the
OPA842. Topologies employing capacitive feedback require a
unity-gain stable, voltage-feedback op amp. Sallen-Key filters
simply use the op amp as a noninverting gain stage inside an
RC network. Either current- or voltage-feedback op amps may
be used in Sallen-Key implementations.
See Figure 6 for an example Sallen-Key low-pass filter, in
which the OPA842 is set up to deliver a low-frequency gain of
+2. The filter component values have been selected to achieve
a maximally flat Butterworth response with a 5MHz, –3dB
bandwidth. The resistor values have been slightly adjusted to
compensate for the effects of the 150MHz bandwidth provided
by the OPA842 in this configuration. This filter may be combined with the ADC driver suggestions to provide moderate (2pole) Nyquist filtering, limiting noise, and out-of-band harmonics into the input of an ADC. This filter will deliver the
exceptionally low harmonic distortion required by high SFDR
ADCs such as the ADS850 (14-bit, 10MSPS, 82dB SFDR).
OPA842
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SBOS267A
C1
150pF
+5V
R1
124Ω
R2
505Ω
V1
C2
100pF
VO
OPA842
RF
402Ω
Power-supply
decoupling not shown.
–5V
RG
402Ω
FIGURE 6. 5MHz Butterwoth Low-Pass Active Filter.
DESIGN-IN TOOLS
DEMONSTRATION BOARDS
Two PC boards are available to assist in the initial evaluation
of circuit performance using the OPA842 in its two package
styles. Both of these are available, free, as an unpopulated PC
board delivered with descriptive documentation. The summary
information for these boards is shown in the table below.
PRODUCT
OPA842ID
OPA842IDBV
PACKAGE
BOARD
PART NUMBER
LITERATURE
REQUEST
NUMBER
SO-8
SOT23-5
DEM-OPA68xU
DEM-OPA6xxN
SBOU010
SBOU009
Go to the TI web site (www.ti.com) to request evaluation
boards in the OPA842 product folder.
MACROMODELS AND APPLICATIONS SUPPORT
Computer simulation of circuit performance using SPICE is
often a quick way to analyze the performance of the OPA842
and its circuit designs. This is particularly true for video and RF
amplifier circuits where parasitic capacitance and inductance
can play a major role on circuit performance. A SPICE model
for the OPA842 is available through the TI web page
(www.ti.com). The applications department is also available
for design assistance. These models predict typical smallsignal AC, transient steps, DC performance, and noise under
a wide variety of operating conditions. The models include the
noise terms found in the electrical specifications of the data
sheet. These models do not attempt to distinguish between
the package types in their small-signal AC performance.
OPERATING SUGGESTIONS
OPTIMIZING RESISTOR VALUES
Since the OPA842 is a unity-gain stable, voltage-feedback
op amp, a wide range of resistor values may be used for the
feedback and gain setting resistors. The primary limits on
these values are set by dynamic range (noise and distortion)
and parasitic capacitance considerations. For a noninverting
unity-gain follower application, the feedback connection should
be made with a 25Ω resistor—not a direct short. This will
isolate the inverting input capacitance from the output pin
and improve the frequency response flatness. Usually, the
feedback resistor value should be between 200Ω and 1kΩ.
Below 200Ω, the feedback network will present additional
output loading which can degrade the harmonic distortion
performance of the OPA842. Above 1kΩ, the typical parasitic
capacitance (approximately 0.2pF) across the feedback resistor may cause unintentional band limiting in the amplifier
response.
A good rule of thumb is to target the parallel combination of RF
and RG (see Figure 1) to be less than about 200Ω. The
combined impedance RF || RG interacts with the inverting input
capacitance, placing an additional pole in the feedback network, and thus a zero in the forward response. Assuming a 2pF
total parasitic on the inverting node, holding RF || RG < 200Ω
will keep this pole above 400MHz. By itself, this constraint
implies that the feedback resistor RF can increase to several
kΩ at high gains. This is acceptable as long as the pole formed
by RF and any parasitic capacitance appearing in parallel is
kept out of the frequency range of interest.
In the inverting configuration, an additional design consideration must be noted. RG becomes the input resistor and
therefore the load impedance to the driving source. If impedance matching is desired, RG may be set equal to the
required termination value. However, at low inverting gains,
the resultant feedback resistor value can present a significant load to the amplifier output. For example, an inverting
gain of 2 with a 50Ω input matching resistor (= RG) would
require a 100Ω feedback resistor, which would contribute to
output loading in parallel with the external load. In such a
case, it would be preferable to increase both the RF and RG
values, and then achieve the input matching impedance with
a third resistor to ground (see Figure 2). The total input
impedance becomes the parallel combination of RG and the
additional shunt resistor.
BANDWIDTH vs GAIN
Voltage-feedback op amps exhibit decreasing closed-loop
bandwidth as the signal gain is increased. In theory, this
relationship is described by the GBP shown in the specifications. Ideally, dividing GBP by the noninverting signal gain
(also called the Noise Gain, or NG) will predict the closedloop bandwidth. In practice, this only holds true when the
phase margin approaches 90°, as it does in high-gain configurations. At low signal gains, most amplifiers will exhibit a
more complex response with lower phase margin. The
OPA842 is optimized to give a maximally flat 2nd-order
Butterworth response in a gain of 2. In this configuration, the
OPA842 has approximately 60° of phase margin and will
show a typical –3dB bandwidth of 150MHz. When the phase
margin is 60°, the closed-loop bandwidth is approximately √2
greater than the value predicted by dividing GBP by the noise
gain. Increasing the gain will cause the phase margin to
approach 90° and the bandwidth to more closely approach
the predicted value of (GBP/NG). At a gain of +10, the
OPA842
SBOS267A
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13
21MHz bandwidth shown in the Electrical Characteristics
agrees with that predicted using the simple formula and the
typical GBP of 200MHz.
OUTPUT DRIVE CAPABILITY
The OPA842 has been optimized to drive the demanding load
of a doubly-terminated transmission line. When a 50Ω line is
driven, a series 50Ω into the cable and a terminating 50Ω load
at the end of the cable are used. Under these conditions, the
cable’s impedance will appear resistive over a wide frequency
range, and the total effective load on the OPA842 is 100Ω in
parallel with the resistance of the feedback network. The
electrical characteristics show a +2.8V/–3.3V swing into this
load—which will then be reduced to a +1.4V/–1.65V swing at
the termination resistor. The ±90mA output drive over temperature provides adequate current drive margin for this load.
Higher voltage swings (and lower distortion) are achievable
when driving higher impedance loads.
A single video load typically appears as a 150Ω load (using
standard 75Ω cables) to the driving amplifier. The OPA842
provides adequate voltage and current drive to support up to
three parallel video loads (50Ω total load) for an NTSC
signal. With only one load, the OPA842 achieves an exceptionally low 0.003%/0.008° dG/dP error.
DRIVING CAPACITIVE LOADS
One of the most demanding, and yet very common, load
conditions for an op amp is capacitive loading. A high-speed,
high open-loop gain amplifier like the OPA842 can be very
susceptible to decreased stability and closed-loop response
peaking when a capacitive load is placed directly on the
output pin. In simple terms, the capacitive load reacts with
the open-loop output resistance of the amplifier to introduce
an additional pole into the loop and thereby decrease the
phase margin. This issue has become a popular topic of
application notes and articles, and several external solutions
to this problem have been suggested. When the primary
considerations are frequency response flatness, pulse response fidelity, and/or distortion, the simplest and most
effective solution is to isolate the capacitive load from the
feedback loop by inserting a series isolation resistor between
the amplifier output and the capacitive load. This does not
eliminate the pole from the loop response, but rather shifts it
and adds a zero at a higher frequency. The additional zero
acts to cancel the phase lag from the capacitive load pole,
thus increasing the phase margin and improving stability.
The Typical Characteristics show the recommended “RS vs
Capacitive Load” and the resulting frequency response at the
load. The criterion for setting the recommended resistor is
maximum bandwidth, flat frequency response at the load.
Since there is now a passive low-pass filter between the
output pin and the load capacitance, the response at the
output pin itself is typically somewhat peaked, and becomes
flat after the roll-off action of the RC network. This is not a
concern in most applications, but can cause clipping if the
desired signal swing at the load is very close to the amplifier’s
swing limit. Such clipping would be most likely to occur in
14
pulse response applications where the frequency peaking is
manifested as an overshoot in the step response.
Parasitic capacitive loads greater than 2pF can begin to
degrade the performance of the OPA842. Long PC board
traces, unmatched cables, and connections to multiple devices can easily cause this value to be exceeded. Always
consider this effect carefully, and add the recommended
series resistor as close as possible to the OPA842 output pin
(see Board Layout section).
DISTORTION PERFORMANCE
The OPA842 is capable of delivering an exceptionally low
distortion signal at high frequencies and low gains. The
distortion plots in the Typical Characteristics show the typical
distortion under a wide variety of conditions. Most of these
plots are limited to 100dB dynamic range. The OPA842’s
distortion does not rise above –100dBc until either the signal
level exceeds 0.5V and/or the fundamental frequency exceeds 500kHz. Distortion in the audio band is ≤ –120dBc.
Generally, until the fundamental signal reaches very high
frequencies or powers, the 2nd-harmonic will dominate the
distortion with a negligible 3rd-harmonic component. Focusing then on the 2nd-harmonic, increasing the load impedance improves distortion directly. Remember that the total
load includes the feedback network—in the noninverting
configuration this is the sum of RF + RG, whereas in the
inverting configuration this is just RF (see Figure 1). Increasing the output voltage swing increases harmonic distortion
directly. Increasing the signal gain will also increase the 2ndharmonic distortion. Again, a 6dB increase in gain will increase the 2nd- and 3rd-harmonic by 6dB even with a
constant output power and frequency. Finally, the distortion
increases as the fundamental frequency increases due to the
roll off in the loop gain with frequency. Conversely, the
distortion will improve going to lower frequencies down to the
dominant open-loop pole at approximately 600Hz. Starting
from the –100dBc 2nd-harmonic for 2Vp-p into 200Ω, G = +2
distortion at 1MHz (from the Typical Characteristics), the
2nd-harmonic distortion at 20kHz should be approximately:
–100dB – 20log (1MHz/20kHz) = –134dBc
The OPA842 has an extremely low 3rd-order harmonic distortion. This also gives an exceptionally good 2-tone, 3rd-order
intermodulation intercept, as shown in the Typical Characteristics. This intercept curve is defined at the 50Ω load when
driven through a 50Ω-matching resistor to allow direct comparisons to RF MMIC devices. This network attenuates the
voltage swing from the output pin to the load by 6dB. If the
OPA842 drives directly into the input of a high-impedance
device, such as an ADC, this 6dB attenuation is not taken.
Under these conditions, the intercept will increase by a minimum 6dBm. The intercept is used to predict the intermodulation
spurious for two closely spaced frequencies. If the two test
frequencies, f1 and f2, are specified in terms of average and
delta frequency, fO = (f1 + f2)/2 and ∆f = |f2 – f1|/2, the two 3rdorder, close-in spurious tones will appear at f O ± (3 • ∆f). The
difference between the two equal test-tone power levels and
these intermodulation spurious power levels is given by
OPA842
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SBOS267A
2 • (IM3 – PO), where IM3 is the intercept taken from the typical
characteristic curve and PO is the power level in dBm at the
50Ω load for one of the two closely spaced test frequencies.
For instance, at 10MHz the OPA842 at a gain of +2 has an
intercept of 45dBm at a matched 50Ω load. If the full envelope
of the two frequencies needs to be 2Vp-p, this requires each
tone to be 4dBm. The 3rd-order intermodulation spurious
tones will then be 2 • (45 – 4) = 82dBc below the test-tone
power level (–80dBm). If this same 2Vp-p 2-tone envelope
were delivered directly into the input of an ADC without the
matching loss or loading of the 50Ω network, the intercept
would increase to at least 51dBm. With the same signal and
gain conditions driving directly into a light load, the spurious
tones will then be at least 2 • (51 – 4) = 94dBc below the
1Vp-p test-tone signal levels.
EN = ENI 2 + (IBN RS )2 + 4kTRS +
(4)
Evaluating these two equations for the OPA842 circuit presented in Figure 1 will give a total output spot noise voltage
of 6.6nV/√Hz and an equivalent input spot noise voltage of
3.3nV/√Hz.
Narrow band communications systems are more commonly
concerned with the noise figure for the amplifier. The total
input referred voltage noise expression (see Equation 4),
may be used to calculate the noise figure. Equation 5 shows
this noise figure expression using the NG of Equation 4 for
the noninverting configuration where the input terminating
resistor, RT, has been set to match the source impedance,
RS (see Figure 1).

EN 2 
NF = 10 log  2 +
kTRS 

NOISE PERFORMANCE
The OPA842 complements its ultra low harmonic distortion
with low input noise terms. Both the input-referred voltage
noise and the two input-referred current noise terms combine
to give a low output noise under a wide variety of operating
conditions. Figure 7 shows the op amp noise analysis model
IBI RF 2 4kTRF
+
NG
NG
kT = 4E − 21J at 290°K
(5)
Evaluating Equation 5 for the circuit of Figure 1 gives a noise
figure = 17.6dB.
DC OFFSET CONTROL
ENI
EO
OPA842
RS
IBN
ERS
RF
√4kTRS
4kT
RG
RG
IBI
√4kTRF
4kT = 1.6E – 20J
at 290°K
FIGURE 7. Op Amp Noise Analysis Model.
with all the noise terms included. In this model, all the noise
terms are taken to be noise voltage or current density terms
in either nV/√Hz or pA/√Hz.
The total output spot noise voltage is computed as the
square root of the squared contributing terms to the output
noise voltage. This computation is adding all the contributing
noise powers at the output by superposition, then taking the
square root to get back to a spot noise voltage. Equation 3
shows the general form for this output noise voltage using
the terms presented in Figure 7.
EO = ENI 2 + (IBN RS )2 + 4kTRS NG2 + (IBI RF )2 + 4kTRF NG (3)
Dividing this expression by the noise gain (NG = 1 + RF/RG)
will give the equivalent input referred spot noise voltage at
the noninverting input, as shown in Equation 4.
The OPA842 can provide excellent DC signal accuracy due to
its high open-loop gain, high common-mode rejection, high
power-supply rejection, and low input offset voltage and bias
current offset errors. To take full advantage of this low input
offset voltage, careful attention to input bias current cancellation is also required. The high-speed input stage for the
OPA842 has a relatively high input bias current (20µA typ into
the pins) but with a very close match between the two input
currents—typically 0.35µA input offset current. The total output offset voltage may be considerably reduced by matching
the source impedances looking out of the two inputs. For
example, one way to add bias current cancellation to the
circuit of Figure 1 would be to insert a 175Ω series resistor into
the noninverting input from the 50Ω terminating resistor. When
the 50Ω source resistor is DC-coupled, this will increase the
source impedance for the noninverting input bias current to
200Ω. Since this is now equal to the impedance looking out of
the inverting input (RF || RG), the circuit will cancel the gains
for the bias currents to the output leaving only the offset
current times the feedback resistor as a residual DC error term
at the output. Using a 402Ω feedback resistor, this output error
will now be less than 1µA • 402Ω = 0.4mV at 25°C.
THERMAL ANALYSIS
The OPA842 will not require heat sinking or airflow in most
applications. Maximum desired junction temperature would
set the maximum allowed internal power dissipation as
described below. In no case should the maximum junction
temperature be allowed to exceed +175°C.
Operating junction temperature (TJ ) is given by TA + PD • θJA.
The total internal power dissipation (PD) is the sum of quiescent power (PDQ) and additional power dissipated in the
output stage (PDL) to deliver load power. Quiescent power is
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15
simply the specified no-load supply current times the total
supply voltage across the part. PDL will depend on the
required output signal and load but would, for a grounded
resistive load, be at a maximum when the output is fixed at a
voltage equal to 1/2 of either supply voltage (for equal bipolar
supplies). Under this worst-case condition, PDL = VS2/(4 • RL),
where RL includes feedback network loading.
Note that it is the power in the output stage and not in the
load that determines internal power dissipation.
As a worst-case example, compute the maximum TJ using an
OPA842IDBV (SOT23-5 package) in the circuit of Figure 1
operating at the maximum specified ambient temperature of
+85°C.
PD = 10V(22.5mA) + 52/(4 • (100Ω || 800Ω)) = 291mW
Maximum TJ = +85°C + (0.29W • 150°C/W) = 129°C
BOARD LAYOUT
Achieving optimum performance with a high-frequency amplifier such as the OPA842 requires careful attention to board
layout parasitics and external component types. Recommendations that will optimize performance include:
a) Minimize parasitic capacitance to any AC ground for
all of the signal I/O pins. Parasitic capacitance on the
output and inverting input pins can cause instability: on the
noninverting input, it can react with the source impedance to
cause unintentional bandlimiting. To reduce unwanted capacitance, a window around the signal I/O pins should be
opened in all of the ground and power planes around those
pins. Otherwise, ground and power planes should be unbroken elsewhere on the board.
b) Minimize the distance (< 0.25") from the power-supply
pins to high-frequency 0.1µF decoupling capacitors. At
the device pins, the ground and power-plane layout should
not be in close proximity to the signal I/O pins. Avoid narrow
power and ground traces to minimize inductance between
the pins and the decoupling capacitors. The power-supply
connections should always be decoupled with these capacitors. Larger (2.2µF to 6.8µF) decoupling capacitors, effective
at lower frequency, should also be used on the main supply
pins. These may be placed somewhat farther from the device
and may be shared among several devices in the same area
of the PC board.
c) Careful selection and placement of external components will preserve the high-frequency performance of the
OPA842. Resistors should be a very low reactance type.
Surface-mount resistors work best and allow a tighter overall
layout. Metal-film and carbon composition, axially leaded
resistors can also provide good high-frequency performance.
Again, keep their leads and PC board trace length as short as
possible. Never use wire-wound type resistors in a highfrequency application. Since the output pin and inverting input
pin are the most sensitive to parasitic capacitance, always
position the feedback and series output resistor, if any, as
close as possible to the output pin. Other network components, such as noninverting input termination resistors, should
16
also be placed close to the package. Where double-side
component mounting is allowed, place the feedback resistor
directly under the package on the other side of the board
between the output and inverting input pins. Even with a low
parasitic capacitance shunting the external resistors, excessively high resistor values can create significant time constants that can degrade performance. Good axial metal-film or
surface-mount resistors have approximately 0.2pF in shunt
with the resistor. For resistor values > 1.5kΩ, this parasitic
capacitance can add a pole and/or a zero below 500MHz that
can effect circuit operation. Keep resistor values as low as
possible consistent with load-driving considerations. It has
been suggested here that a good starting point for design
would be to set RG || RF ≤ 200Ω. Doing this will automatically
keep the resistor noise terms low, and minimize the effect of
their parasitic capacitance.
d) Connections to other wideband devices on the board
may be made with short direct traces or through onboard
transmission lines. For short connections, consider the
trace and the input to the next device as a lumped capacitive
load. Relatively wide traces (50mils to 100mils) should be
used, preferably with ground and power planes opened up
around them. Estimate the total capacitive load and set RS
from the plot of “Recommended RS vs Capacitive Load.” Low
parasitic capacitive loads (< 5pF) may not need an RS since
the OPA842 is nominally compensated to operate with a 2pF
parasitic load. Higher parasitic capacitive loads without an RS
are allowed as the signal gain increases (increasing the
unloaded phase margin). If a long trace is required, and the
6dB signal loss intrinsic to a doubly-terminated transmission
line is acceptable, implement a matched impedance transmission line using microstrip or stripline techniques (consult
an ECL design handbook for microstrip and stripline layout
techniques). A 50Ω environment is normally not necessary
on board, and in fact, a higher impedance environment will
improve distortion as shown in the distortion versus load
plots. With a characteristic board trace impedance defined
based on board material and trace dimensions, a matching
series resistor into the trace from the output of the OPA842
is used as well as a terminating shunt resistor at the input of
the destination device. Remember also that the terminating
impedance will be the parallel combination of the shunt
resistor and input impedance of the destination device; this
total effective impedance should be set to match the trace
impedance. If the 6dB attenuation of a doubly-terminated
transmission line is unacceptable, a long trace can be seriesterminated at the source end only. Treat the trace as a
capacitive load in this case and set the series resistor value
as shown in the plot of “RS vs Capacitive Load.” This will not
preserve signal integrity as well as a doubly-terminated line.
If the input impedance of the destination device is low, there
will be some signal attenuation due to the voltage divider
formed by the series output into the terminating impedance.
e) Socketing a high-speed part like the OPA842 is not
recommended. The additional lead length and pin-to-pin
capacitance introduced by the socket can create an extremely troublesome parasitic network, which can make it
OPA842
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SBOS267A
almost impossible to achieve a smooth, stable frequency
response. Best results are obtained by soldering the OPA842
onto the board.
INPUT AND ESD PROTECTION
The OPA842 is built using a very high-speed complementary
bipolar process. The internal junction breakdown voltages are
currents are possible (e.g., in systems with ±15V supply parts
driving into the OPA842), current-limiting series resistors
should be added into the two inputs. Keep these resistor
values as low as possible since high values degrade both
noise performance and frequency response. Figure 9 shows
an example protection circuit for I/O voltages that may
exceed the supplies.
+VCC
+5V
50Ω Source
External
Pin
Power-supply
decoupling not shown.
174Ω
V1
50Ω
50Ω D1
–VCC
D2
OPA842
VO
FIGURE 8. Internal ESD Protection.
RF
301Ω
50Ω
relatively low for these very small geometry devices. These
breakdowns are reflected in the Absolute Maximum Ratings
table. All device pins are protected with internal ESD protection diodes to the power supplies, as shown in Figure 8.
These diodes provide moderate protection to input overdrive
voltages above the supplies as well. The protection diodes
can typically support 30mA continuous current. Where higher
301Ω
RG
D1 = D2 IN5911 (or equivalent)
FIGURE 9. Gain of +2 with Input Protection.
OPA842
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17
PACKAGE DRAWINGS
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
8 PINS SHOWN
0.020 (0,51)
0.014 (0,35)
0.050 (1,27)
8
0.010 (0,25)
5
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
1
4
0.010 (0,25)
0°– 8°
A
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
0.004 (0,10)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
4040047/E 09/01
NOTES: A.
B.
C.
D.
18
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
OPA842
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SBOS267A
PACKAGE DRAWINGS (Cont.)
DBV (R-PDSO-G5)
PLASTIC SMALL-OUTLINE
0,50
0,30
0,95
5
0,20 M
4
1,70
1,50
1
0,15 NOM
3,00
2,60
3
Gage Plane
3,00
2,80
0,25
0° – 8°
0,55
0,35
Seating Plane
1,45
0,95
0,05 MIN
0,10
4073253-4/G 01/02
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion.
Falls within JEDEC MO-178
OPA842
SBOS267A
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19
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