STMICROELECTRONICS STD18N65M5

STB18N65M5, STD18N65M5
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET
in D²PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB18N65M5
STD18N65M5
VDSS @
TJmax
RDS(on)
max
ID
TAB
TAB
710 V
< 0.22 Ω
15 A
2
2 3
3
1
D2PAK
■
Worldwide best RDS(on) * area
■
Higher VDSS rating and high dv/dt capability
■
Excellent switching performance
■
100% avalanche tested
Applications
■
1
Figure 1.
DPAK
Internal schematic diagram
Switching applications
$4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
Package
D2PAK
STB18N65M5
Tape and reel
18N65M5
STD18N65M5
July 2012
This is information on a product in full production.
Packaging
DPAK
Doc ID 023446 Rev 1
1/18
www.st.com
18
Contents
STB18N65M5, STD18N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
.............................................. 9
Doc ID 023446 Rev 1
STB18N65M5, STD18N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Gate-source voltage
VGS
Unit
D2PAK
DPAK
± 25
V
ID
Drain current (continuous) at TC = 25 °C
15
A
ID
Drain current (continuous) at TC = 100 °C
9.4
A
Drain current (pulsed)
60
A
Total dissipation at TC = 25 °C
110
W
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
IDM
(1)
PTOT
dv/dt
(1)
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb
(1)
Thermal resistance junction-pcb max
Unit
D2PAK
DPAK
1.14
30
°C/W
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID= IAR; VDD=50 V)
Doc ID 023446 Rev 1
Value
Unit
4
A
210
mJ
3/18
Electrical characteristics
2
STB18N65M5, STD18N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 7.5 A
resistance
Symbol
Ciss
Coss
Crss
Co(tr)(1)
Co(er)
(2)
Typ.
Max.
Unit
650
V
1
100
µA
µA
± 100
nA
4
5
V
0.198
0.22
Ω
Min.
Typ.
Max.
Unit
-
1240
32
3.2
-
pF
pF
pF
-
99
-
pF
-
30
-
pF
-
3
-
Ω
-
31
8
14
-
nC
nC
nC
VGS = ± 25 V
VGS(th)
Table 6.
Min.
3
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
Equivalent
capacitance energy
related
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 7.5 A,
VGS = 10 V
(see Figure 18)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/18
Doc ID 023446 Rev 1
STB18N65M5, STD18N65M5
Table 7.
Symbol
td (V)
tr (V)
tf(i)
tc(off)
Table 8.
Electrical characteristics
Switching times
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 9.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
36
7
9
11
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
15
60
A
A
ISD = 15 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
-
290
3.4
23.5
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
-
352
4
24
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 023446 Rev 1
5/18
Electrical characteristics
STB18N65M5, STD18N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D2PAK
Figure 3.
Thermal impedance for D2PAK
Figure 5.
Thermal impedance for DPAK
Figure 7.
Transfer characteristics
AM12487v1
S(
on
)
Op
Lim era
ite tion
d
by in th
m is
ax ar
RD ea
is
ID
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
Figure 4.
10
1
VDS(V)
100
Safe operating area for DPAK
AM124871v1
(o
n)
10µs
DS
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
a
is
ID
(A)
10
100µs
1
0.1
0.1
Figure 6.
1
Tj=150°C
Tc=25°C
1ms
Single
pulse
10ms
10
VDS(V)
100
Output characteristics
AM12472v1
ID
(A)
VGS= 9, 10 V
35
35
VGS= 8 V
25
25
20
20
VGS= 7 V
15
15
10
10
VGS= 6 V
5
6/18
VDS= 25 V
30
30
0
0
AM12486v1
ID
(A)
5
10
15
20
5
VDS(V)
0
3
Doc ID 023446 Rev 1
4
5
6
7
8
9 VGS(V)
STB18N65M5, STD18N65M5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM12474v1
VGS
(V)
VDS
(V)
500
VDD=520V
12
ID=7.5A
VDS
Static drain-source on-resistance
RDS(on)
(Ω)
0.24
AM12475v1
VGS=10V
0.23
10
400
8
300
0.22
0.21
0.2
6
200
4
0.19
0.18
100
2
0
0
Figure 10.
0.17
5
10
15
20
25
30
0
Qg(nC)
Capacitance variations
2
4
6
8
10
12
14 ID(A)
Figure 11. Output capacitance stored energy
AM12476v1
C
(pF)
0.16
0
AM12484v1
Eoss
(µJ)
6
10000
5
Ciss
1000
4
3
100
2
Coss
10
1
Crss
1
0.1
1
100
10
Figure 12. Normalized gate threshold voltage
vs temperature
AM12471v1
VGS(th)
(norm)
1.10
0
0
VDS(V)
ID = 250 µA
VDS = VGS
600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM12483v1
RDS(on)
(norm)
2.1
1.9
1.00
400
200
VGS= 10V
ID= 7.5 A
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 023446 Rev 1
0
25
50
75 100
TJ(°C)
7/18
Electrical characteristics
STB18N65M5, STD18N65M5
Figure 14. Drain-source diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
AM05461v1
VSD
(V)
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
30
20
40
50 ISD(A)
0.92
-50 -25
Figure 16. Switching losses vs gate resistance
(1)
AM12485v1
E (μJ)
VDD=400V
VGS=10V
ID=9.5A
160
140
Eon
120
100
80
60
Eoff
40
20
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/18
Doc ID 023446 Rev 1
0
25
50
75 100
TJ(°C)
STB18N65M5, STD18N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
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2'
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6'
K
07
K
K
07
!-V
!-V
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
!
!
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&!34
$)/$%
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6$
, (
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2'
3
6I
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!-V
Figure 21. Unclamped inductive waveform
6"2$33
!-V
Figure 22. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
6$
90%Vds
90%Id
Tdelay-off
-off
)$Vgs
90%Vgs
on
)$
Vgs(I(t))
))
6$$
6$$
10%Id
10%Vds
Vds
Trise
!-V
Doc ID 023446 Rev 1
Tfall
Tcross --over
AM05540v2
9/18
Package mechanical data
4
STB18N65M5, STD18N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/18
Typ.
0.4
0°
8°
Doc ID 023446 Rev 1
STB18N65M5, STD18N65M5
Package mechanical data
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
Doc ID 023446 Rev 1
11/18
Package mechanical data
Table 10.
STB18N65M5, STD18N65M5
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
R
V2
12/18
Typ.
1
0.20
0°
8°
Doc ID 023446 Rev 1
STB18N65M5, STD18N65M5
Package mechanical data
Figure 25. DPAK (TO-252) drawing
0068772_I
Figure 26. DPAK footprint(b)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
AM08850v1
b. All dimensions are in millimeters
Doc ID 023446 Rev 1
13/18
Packaging mechanical data
5
STB18N65M5, STD18N65M5
Packaging mechanical data
Table 11.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Table 12.
18.4
22.4
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
14/18
Max.
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
Doc ID 023446 Rev 1
Max.
330
13.2
26.4
30.4
STB18N65M5, STD18N65M5
Table 12.
Packaging mechanical data
D²PAK (TO-263) tape and reel mechanical data (continued)
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
R
50
T
0.25
0.35
W
23.7
24.3
Min.
Max.
Figure 27. Tape for D²PAK (TO-263) and DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
K0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Doc ID 023446 Rev 1
15/18
Packaging mechanical data
STB18N65M5, STD18N65M5
Figure 28. Reel for D²PAK (TO-263) and DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
16/18
Doc ID 023446 Rev 1
STB18N65M5, STD18N65M5
6
Revision history
Revision history
Table 13.
Document revision history
Date
Revision
18-Jul-2012
1
Changes
First release.
Doc ID 023446 Rev 1
17/18
STB18N65M5, STD18N65M5
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18/18
Doc ID 023446 Rev 1