STMICROELECTRONICS STB12NM50ND

STB12NM50ND
STD12NM50ND
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET
(with fast diode), D2PAK, DPAK
Preliminary Data
Features
Type
VDSS (@Tjmax) RDS(on) max
ID
STB12NM50ND
550 V
0.38 Ω
11 A
STD12NM50ND
550 V
0.38 Ω
11 A
■
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
3
1
D2PAK
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Extremely high dv/dt and avalanche
capabilities
Application
■
3
1
Figure 1.
DPAK
Internal schematic diagram
Switching applications
Description
$
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB12NM50ND
12NM50ND
D2PAK
Tape and reel
STD12NM50ND
12NM50ND
DPAK
Tape and reel
September 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
Contents
STB12NM50ND, STD12NM50ND
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 6
STB12NM50ND, STD12NM50ND
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
11
A
ID
Drain current (continuous) at TC = 100 °C
6.9
A
IDM (1)
Drain current (pulsed)
44
A
PTOT
Total dissipation at TC = 25 °C
100
W
Peak diode recovery voltage slope
40
V/ns
-55 to 150
°C
150
°C
dv/dt (2)
Tstg
Tj
Storage temperature
Operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 11 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-pcb
Thermal resistance junction-pcb max
Tl
Table 4.
Symbol
Maximum lead temperature for soldering
purposes
D²PAK
DPAK
1.25
30
Unit
°C/W
50
300
°C/W
°C
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
Unit
5
A
350
mJ
3/13
Electrical characteristics
2
STB12NM50ND, STD12NM50ND
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
dv/dt(1)
On/off states
Parameter
Drain-source breakdown
voltage
Drain-source voltage slope
Test conditions
ID = 1 mA, VGS= 0
Min.
Typ.
Max.
500
VDD = 400 V,ID = 11 A,
V
44
VGS = 10 V
Unit
VDS = Max rating,
V/ns
VDS = Max rating,@125 °C
1
100
µA
µA
Gate body leakage current
(VDS = 0)
VGS = ±20 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
0.29
0.38
Ω
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
3
1. Value measured at turn off under inductive load
Table 6.
Symbol
Parameter
gfs(1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS =15 V, ID= 5.5 A
VDS = 50 V, f =1 MHz,
VGS = 0
Min.
8
S
TBD
TBD
TBD
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
TBD
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
TBD
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
TBD
TBD
TBD
nC
nC
nC
Coss eq.(2)
1.
Dynamic
VDD = 400 V, ID = 11 A
VGS = 10 V
(see Figure 3)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/13
STB12NM50ND, STD12NM50ND
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Symbol
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
Min
Typ
Max
TBD
TBD
TBD
TBD
VDD = 250 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
Unit
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Min
Typ
Max
Unit
11
44
A
A
TBD
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 11 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 4)
TBD
TBD
TBD
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 11 A
Tj = 150 °C (see Figure 4)
TBD
TBD
TBD
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/13
Test circuits
STB12NM50ND, STD12NM50ND
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 3.
Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 4.
AM01469v1
Test circuit for inductive load
Figure 5.
switching and diode recovery times
A
A
D.U.T.
FAST
DIODE
B
B
Unclamped Inductive load test
circuit
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 6.
Unclamped inductive waveform
AM01471v1
Figure 7.
Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
6/13
0
10%
AM01473v1
STB12NM50ND, STD12NM50ND
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/13
Package mechanical data
STB12NM50ND, STD12NM50ND
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Typ
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
0079457_M
8/13
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
STB12NM50ND, STD12NM50ND
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
9/13
Packaging mechanical data
5
STB12NM50ND, STD12NM50ND
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
10/13
inch
0.933 0.956
MIN.
330
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB12NM50ND, STD12NM50ND
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
11/13
Revision history
6
STB12NM50ND, STD12NM50ND
Revision history
Table 9.
12/13
Document revision history
Date
Revision
23-Sep-2008
1
Changes
First release
STB12NM50ND, STD12NM50ND
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13/13