STMICROELECTRONICS STD12NF06T4-1

STD12NF06
STD12NF06T4
N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK
STripFET™ II Power MOSFET
Features
Type
VDSSS
RDS(on)
ID
STD12NF06
60V
<0.1Ω
12A
STD12NF06T4
60V
<0.1Ω
12A
■
Exceptional dv/dt capability
■
Low gate charge
3
3
2
1
DPAK
1
IPAK
Applications
■
Switching application
Figure 1.
Internal schematic diagram
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD12NF06T4T4
D12NF06
DPAK
Tape and reel
STD12NF06T4-1
D12NF06
IPAK
Tube
November 2009
Doc ID 8431 Rev 7
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www.st.com
14
Contents
STD12NF06, STD12NF06T4
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STD12NF06, STD12NF06T4
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
60
V
Drain-gate voltage (RGS = 20KΩ)
60
V
± 20
V
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
12
A
ID
Drain current (continuous) at TC=100°C
8.5
A
Drain current (pulsed)
48
A
Total dissipation at TC = 25°C
30
W
Derating factor
0.2
W/°C
Peak diode recovery voltage slope
15
V/ns
Single pulse avalanche energy
140
mJ
-55 to 175
°C
Value
Unit
5
°C/W
IDM
(1)
PTOT
(2)
dv/dt
EAS
(3)
Tstg
TJ
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤12 A, di/dt ≤200 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX
3. Starting TJ = 25 oC, ID = 6 A, VDD = 30 V
Table 3.
Symbol
Thermal data
Parameter
RthJC
Thermal resistance junction-case Max
RthJA
Thermal resistance junction-ambient Max
100
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
°C
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Electrical characteristics
2
STD12NF06, STD12NF06T4
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 25mA, VGS = 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 6A
V(BR)DSS
Table 5.
Symbol
Min.
Typ.
Max. Unit
60
V
1
10
µA
µA
±100
nA
3
4
V
0.08
0.1
W
Min.
Typ.
Max.
Unit
2
Dynamic
Parameter
Test conditions
gfs (1)
Forward transconductance
VDS = 15V, ID = 6A
-
5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
-
315
70
30
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48V, ID = 12A
VGS = 10V
-
10
3.0
3.5
12
nC
nC
nC
Max.
Unit
-
ns
ns
ns
ns
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 6.
Symbol
td(on)
tr
td(off)
tf
4/14
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
-
7
18
17
6
VDD = 30V, ID = 6A,
RG = 4.7Ω, VGS = 10V
Figure 14 on page 8
Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4
Table 7.
Symbol
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
Source-drain current
-
12
A
Source-drain current (pulsed)
-
48
A
1.3
V
Forward on voltage
ISD = 12A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A,
di/dt = 100A/µs,
VDD = 30V, TJ = 150°C
Figure 16 on page 8
-
50
65
3.5
ns
nC
A
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
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Electrical characteristics
STD12NF06, STD12NF06T4
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STD12NF06, STD12NF06T4
Figure 8.
Electrical characteristics
Gate charge vs. gate-source
voltage
Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized breakdown voltage vs.
temperature
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Test circuits
3
STD12NF06, STD12NF06T4
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 18. Unclamped inductive waveform
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STD12NF06, STD12NF06T4
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 8431 Rev 7
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Package mechanical data
STD12NF06, STD12NF06T4
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
4.60
H
16.10
L
9.00
9.40
(L1)
0.80
1.20
L2
0.80
V1
10 o
0068771_H
10/14
Doc ID 8431 Rev 7
STD12NF06, STD12NF06T4
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
1
R
V2
0.20
8o
0o
0068772_G
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Packaging mechanical data
5
STD12NF06, STD12NF06T4
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
12/14
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
Doc ID 8431 Rev 7
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD12NF06, STD12NF06T4
6
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
09-Sep-2004
3
Complete document
07-Aug-2006
4
The document has been reformatted
19-Feb-2007
5
Typo mistake on page 1
15-Apr-2009
6
Table 1: Device summary has been updated
Mechanical data updated
26-Nov-2009
7
Updated Qrr in Table 7: Source drain diode.
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STD12NF06, STD12NF06T4
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