STB80NF03L-04T4 N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET™ II Power MOSFET Features Type VDSS RDS(on) max ID STB80NF03L-04T4 30 V < 0.004 Ω 80 A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Low threshold drive 3 1 D²PAK Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STB80NF03L-04T4 80NF03L-04 D²PAK Tape and reel April 2009 Doc ID 8479 Rev 4 1/13 www.st.com 13 Contents STB80NF03L-04T4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/13 .............................................. 8 Doc ID 8479 Rev 4 STB80NF03L-04T4 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 2 V/ns IDM (2) PTOT dv/dt (3) EAS(4) Single pulse avalanche energy 2.3 J Tstg Tj Storage temperature Operating junction temperature -60 to 175 °C Value Unit 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 240 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX 4. Starting Tj = 25 °C, ID = 80 A, VDD = 50 V Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl Doc ID 8479 Rev 4 3/13 Electrical characteristics 2 STB80NF03L-04T4 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating @125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A Table 5. Symbol Test conditions Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V 0.0035 0.004 0.004 0.0055 Ω Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V , ID = 15 A - 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 5500 1670 290 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 24 V, ID = 80 A, VGS = 4.5 V Figure 15 - 85 23 40 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 4/13 Min. Doc ID 8479 Rev 4 110 nC nC nC STB80NF03L-04T4 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 15 V, ID= 40 A, RG = 4.7 Ω, VGS=4.5 V Figure 16 Min. Typ. Max. Unit - 30 270 110 95 - ns ns ns ns Min. Typ. Max. Unit Source drain diode Parameter Test conditions Source-drain current - 80 A ISDM (1) Source-drain current (pulsed) - 320 A VSD (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, VDD = 20 V di/dt = 100 A/µs Tj=150 °C - trr Qrr IRRM 75 0.15 4 ns µC A 1. Pulse width limited by safe operating area 2. Pulse duration=300 µs, duty cycle 1.5% Doc ID 8479 Rev 4 5/13 Electrical characteristics STB80NF03L-04T4 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature. Doc ID 8479 Rev 4 7/13 Test circuits 3 STB80NF03L-04T4 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/13 Figure 19. Switching time waveform Doc ID 8479 Rev 4 STB80NF03L-04T4 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 8479 Rev 4 9/13 Package mechanical data STB80NF03L-04T4 D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.409 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 10/13 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° Typ Doc ID 8479 Rev 4 8° STB80NF03L-04T4 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type Doc ID 8479 Rev 4 11/13 Revision history 6 STB80NF03L-04T4 Revision history Table 8. 12/13 Document revision history Date Revision Changes 02-Oct-2007 3 Initial electronic version 20-Apr-2009 4 Removed packages TO-220, I²PAK. Doc ID 8479 Rev 4 STB80NF03L-04T4 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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