STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 2 3 1 TO-220 TO-247 ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF 3 1 2 TO-3PF Application ■ 3 1 Figure 1. Internal schematic diagram. Switching applications $ Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STFW4N150 4N150 TO-3PF Tube STP4N150 P4N150 TO-220 Tube STW4N150 W4N150 TO-247 Tube July 2009 Doc ID 11262 Rev 9 1/15 www.st.com 15 Contents STFW4N150, STP4N150, STW4N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-247 TO-3PF VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 4 4 4 (1) A ID Drain current (continuous) at TC = 100 °C 2.5 2.5 2.5 (1) A IDM (1) Drain current (pulsed) 12 12 12 (1) A PTOT Total dissipation at TC = 25 °C 63 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 3500 V Tstg Storage temperature Tj 160 Max. operating junction temperature -55 to 150 °C 150 °C 1. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junctionambient max Table 4. Symbol TO-247 TO-3PF 0.78 62.5 2 °C/W 50 °C/W Value Unit 4 A 350 mJ Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Doc ID 11262 Rev 9 3/15 Electrical characteristics 2 STFW4N150, STP4N150, STW4N150 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance VGS = 10 V, ID = 2 A Table 6. Symbol Test conditions Typ. Max. 1500 3 Unit V 10 500 µA µA ± 100 nA 4 5 V 5 7 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 30 V, ID = 2 A - 3.5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1300 120 12 pF pF pF td(on) Tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 750 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V Figure 19 - 35 30 45 45 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 600 V, ID = 4 A, VGS = 10 V Figure 20 - 30 10 9 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 4/15 Min. Doc ID 11262 Rev 9 50 nC nC nC STFW4N150, STP4N150, STW4N150 Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 4 12 A A 2 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 4 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD = 45 V Figure 21 - 510 3 12 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD = 45 V, Tj = 150°C Figure 21 - 615 4 12.6 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 11262 Rev 9 5/15 Electrical characteristics STFW4N150, STP4N150, STW4N150 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF AM03935v1 ID (A) δ=0.5 0.2 10 0.1 is 0.1 n) 10µs DS (o Op Lim era ite tion d by in th m is ax ar R ea 1 100µs -1 10 Figure 6. 6/15 1 0.05 1ms Tj=150°C Tc=25°C 0.02 10ms 0.01 Sinlge pulse 0.01 0.1 TO3PF K 10 100 Single pulse 1000 VDS(V) Safe operating area for TO-247 -2 10 -5 10 Figure 7. Doc ID 11262 Rev 9 -4 10 -3 10 -2 10 -1 10 t (s) Thermal impedance for TO-247 STFW4N150, STP4N150, STW4N150 Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 11262 Rev 9 7/15 Electrical characteristics STFW4N150, STP4N150, STW4N150 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 11262 Rev 9 10% AM01473v1 9/15 Package mechanical data 4 STFW4N150, STP4N150, STW4N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 11262 Rev 9 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/15 Package mechanical data STFW4N150, STP4N150, STW4N150 TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 12/15 Max. 5.15 5.50 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Package mechanical data TO-3PF mechanical data DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia mm. typ min. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 10 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132_C Doc ID 11262 Rev 9 13/15 Revision history 5 STFW4N150, STP4N150, STW4N150 Revision history Table 8. 14/15 Document revision history Date Revision Changes 29-Mar-2005 1 Initial release 07-Jul-2005 2 Removed TO-220FP 07-Oct-2005 3 Document status promoted from preliminary data to datasheet 10-Aug-2006 4 Document reformatted, no content change 06-Nov-2007 5 Updated unit on Table 5: On/off states 09-Apr-2008 6 Added new packages: TO-220FH, TO-3PF 21-Jan-2009 7 Remove package TO-220FH 23-Feb-2009 8 Added PTOT value for TO-3PF PTOT (Table 2: Absolute maximum ratings) 23-Jul-2009 9 Added new figures: Figure 4: Safe operating area for TO-3PF and Figure 5: Thermal impedance for TO-3PF Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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