STMICROELECTRONICS STL12P6F6

STL12P6F6
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
Order code
VDSS
RDS(on)max
ID
STL12P6F6
60 V
0.16 Ω @ 10 V
3A
• RDS(on) * Qg industry benchmark
1
• Extremely low on-resistance RDS(on)
2
3
4
• High avalanche ruggedness
• Low gate drive power losses
PowerFLAT™ 5x6
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
'ĆĆĆ
This device is a P-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
*
6ĆĆ
$09
Table 1. Device summary
Order code
Marking
Package
Packaging
STL12P6F6
12P6F6
PowerFLAT 5x6
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
March 2013
This is information on a product in full production.
DocID024400 Rev 1
1/13
www.st.com
13
Contents
STL12P6F6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
............................................... 6
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1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
Drain current (continuous) at TC = 25 °C
4
A
ID(1)
Drain current (continuous) at TC = 100 °C
7
A
ID
(2)
Drain current (continuous) at Tpcb = 25 °C
12
A
ID
(2)
Drain current (continuous) at Tpcb = 100 °C
7
A
(2)(3)
Drain current (pulsed)
48
A
PTOT
Total dissipation at TC = 25 °C
75
W
PTOT
Total dissipation at Tpcb = 25 °C
4.8
W
Tj
Pstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Value
Unit
Thermal resistance junction-case max
2
°C/W
Thermal resistance junction-pcb max
31.3
°C/W
ID
IDM
(1)
1. The value is according to Rthj-case
2. The value is according to Rthj-pcb
3. Pulse width is limited by safe operating area.
Table 3. Thermal data
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
1. When mounted on FR-4 board of 15 mm2, 2 Oz Cu, t<10 sec
Note:
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
DocID024400 Rev 1
3/13
Electrical characteristics
2
STL12P6F6
Electrical characteristics
(Tcase = 25 °C unless otherwise specified).
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
(VGS = 0)
Test conditions
ID = 250 μA
IDSS
Zero gate voltage
VDS = 60 V
drain current (VGS = 0) VDS = 60 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
60
Gate threshold voltage VDS = VGS, ID = 250 μA
RDS(on)
Static drain-source onVGS = 10 V, ID = 1.5 A
resistance
Unit
V
1
10
μA
μA
±100
nA
4
V
0.13
0.16
Ω
Min.
Typ.
Max.
Unit
-
340
-
pF
-
40
-
pF
-
20
-
pF
-
6.4
-
nC
-
1.7
-
nC
-
1.7
-
nC
Min.
Typ.
Max.
Unit
-
6.4
-
ns
-
5.3
-
ns
-
14
-
ns
-
3.7
-
ns
VGS = ± 20 V
VGS(th)
Max.
2
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 48 V, f = 1 MHz,
VGS = 0
VDD = 48 V, ID = 3 A,
VGS = 10 V
(see Figure 3)
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
Note:
4/13
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 48 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
Fall time
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
DocID024400 Rev 1
STL12P6F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Min.
Typ.
Max. Unit
-
3
12
A
A
ISD = 3 A, VGS = 0
-
1.1
V
ISD = 5 A, di/dt = 100 A/μs
VDD = 16 V, Tj = 150 °C
(see Figure 4)
-
20
ns
-
17.8
nC
-
1.8
A
1. Pulse width limited by safe operating area.
2. Pulse duration = 300 μs, duty cycle 1.5%
Note:
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
DocID024400 Rev 1
5/13
Test circuits
3
STL12P6F6
Test circuits
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
switching and diode recovery times
6/13
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STL12P6F6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8. PowerFLAT 5x6 type S-R mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
1.00
A1
0.02
0.05
A2
0.25
b
0.30
0.50
D
5.00
5.20
5.40
E
5.95
6.15
6.35
D2
4.11
4.31
E2
3.50
3.70
e
1.27
L
0.60
0.80
K
1.275
1.575
DocID024400 Rev 1
7/13
Package mechanical data
STL12P6F6
Figure 5. PowerFLAT™ 5x6 type S-R drawing
5
8
Bottom View
Pin 1
identification
4
1
Side View
8
5
.
Top View
Pin 1
identification
8/13
1
4
8231817_Rev.F_Ribbon type S-R
DocID024400 Rev 1
STL12P6F6
Package mechanical data
Figure 6. PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)
Footprint
DocID024400 Rev 1
9/13
Packaging mechanical data
5
STL12P6F6
Packaging mechanical data
Figure 7. PowerFLAT™ 5x6 tape(a)
P0
4.0±0.1 (II)
P2
2.0±0.1 (I)
T
(0.30 ±0.05)
E1
1.75±0.1
Y
0.
20
Do
Ø1.55±0.05
W(12.00±0.3)
F(5.50±0.1)(III)
R
Bo (5.30±0.1)
C
L
EF
D1
Ø1.5 MIN.
REF
.R0
.50
Y
P1(8.00±0.1)
Ao(6.30±0.1)
Ko (1.20±0.1)
SECTION Y-Y
(I) Measured from centerline of sprocket hole
to centerline of pocket.
Base and bulk quantity 3000 pcs
(II) Cumulative tolerance of 10 sprocket
holes is ± 0.20 .
(III) Measured from centerline of sprocket
hole to centerline of pocket.
8234350_Tape_rev_C
Figure 8. PowerFLAT™ 5x6 package orientation in carrier tape.
Pin 1
identification
a. All dimensions are in millimeters.
10/13
DocID024400 Rev 1
STL12P6F6
Packaging mechanical data
Figure 9. PowerFLAT™ 5x6 reel
R0.60
W3
11.9/15.4
PART NO.
1.90
2.50
R25.00
ØN
178(±2.0)
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING ELECTROSTATIC
SENSITIVE DEVICES
W2
18.4 (max)
A
330 (+0/-4.0)
4.00
2.50
77
ESD LOGO
W1
12.4 (+2/-0)
06
PS
ØA
128
2.20
R1.10
Ø21.2
All dimensions are in millimeters
13.00
CORE DETAIL
8234350_Reel_rev_C
DocID024400 Rev 1
11/13
Revision history
6
STL12P6F6
Revision history
Table 9. Document revision history
12/13
Date
Revision
20-Mar-2013
1
Changes
First release.
DocID024400 Rev 1
STL12P6F6
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