STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET Features Type VDSS RDS(on) max ID STN3PF06 60 V < 0.22 Ω 2.5 A ■ Extremely dv/dt capability ■ 100% avalanche tested ■ 2 1 2 3 SOT-223 Application oriented characterization Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STN3PF06 N3PF06 SOT-223 Tape and reel March 2008 Rev 4 1/12 www.st.com 12 Contents STN3PF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ............................................... 8 STN3PF06 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 2.5 A ID Drain current (continuous) at TC = 100 °C 1.5 A Drain current (pulsed) 10 A Total dissipation at TC = 25 °C 2.5 W Derating factor 0.02 W/°C 6 V/ns -65 to 150 °C Value Unit 50 °C/W 62.5 °C/W 260 °C IDM (1) PTOT dv/dt (2) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 3A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol Rthj-pcb Rthj-a Tl Parameter Thermal resistance junction-pcb board max Thermal resistance junction-ambient max(1) Maximum lead temperature for soldering purpose 1. Surface mounted Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 3/12 Electrical characteristics 2 STN3PF06 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Test conditions ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C ID(on) On state drain current VDS > ID(on) x RDS(on)max, VGS =10 V IGSS Gate-body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.5 A Table 5. Symbol Min. Typ. Max. Unit 60 V 1 10 2.5 µA µA A ±100 nA 4 V 0.20 0.22 Ω Typ. Max. Unit 2 Dynamic Parameter Test conditions Min. Forward transconductance VDS > ID(on) x RDS(on)max, ID= 1.25 A 1.5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 850 230 75 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge ID = 12 A, VDD = 48 V, VGS = 10 V (see Figure 14) 16 4 6 gfs 4/12 Parameter Drain-source breakdown voltage V(BR)DSS Note: On/off states 21 nC nC nC For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed STN3PF06 Electrical characteristics Table 6. Symbol Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 30 V, ID=6 A, RG=4.7 Ω, VGS=10 V (see Figure 13) 20 40 ns ns td(off) tf Turn-off delay time Fall time VDD= 30 V, ID=6 A, RG=4.7 Ω, VGS=10 V (see Figure 13) 40 10 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Vclamp= 48 V, ID=12 A, RG=4.7 Ω, VGS=10 V (see Figure 13) 10 17 30 ns ns ns Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 1.5 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 30 V, Tj =150 °C trr Qrr IRRM Test conditions Min Typ. 100 260 5.2 Max Unit 2.5 10 A A 1.2 V ns µC A 1. Pulse width limited by Tjmax 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 5/12 Electrical characteristics STN3PF06 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 STN3PF06 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/12 Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times 8/12 STN3PF06 Figure 14. Gate charge test circuit STN3PF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STN3PF06 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 10/12 STN3PF06 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 08-May-2007 3 The document has been reformatted 27-Mar-2008 4 Document status promoted from preliminary data to datasheet. 11/12 STN3PF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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