STMICROELECTRONICS STP10P6F6

STD10P6F6,
STP10P6F6
P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™
Power MOSFET in DPAK and TO-220 packages
Datasheet — preliminary data
Features
Order codes
VDSS
RDS(on) max
ID
STD10P6F6
60 V
0.18 Ω
10 A
STP10P6F6
60 V
0.18 Ω
10 A
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
High avalanche ruggedness
■
Low gate drive power losses
3
3
1
DPAK
1
2
TO-220
Applications
■
Switching applications
Figure 1.
Description
Internal schematic diagram
These devices are P-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
AM11258v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD10P6F6
10P6F6
DPAK
Tape and reel
STP10P6F6
10P6F6
TO-220
Tube
Note:
June 2012
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
Doc ID 022967 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
15
Contents
STD10P6F6, STP10P6F6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
............................................... 6
Doc ID 022967 Rev 2
STD10P6F6, STP10P6F6
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
Drain current (continuous) at TC = 25 °C
10
A
Drain current (continuous) at TC = 100 °C
7.2
A
Drain current (pulsed)
40
A
Total dissipation at TC = 25 °C
35
W
0.23
W/°C
-55 to 175
°C
175
°C
ID
(1)
ID
IDM
(2)
PTOT
Derating factor
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
DPAK
TO-220
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
100
62.5
°C/W
Maximum lead temperature for soldering purpose
275
300
°C
Tl
Warning:
4.29
°C/W
For the P-channel Power MOSFET the actual polarity of the
voltages and the current must be reversed.
Doc ID 022967 Rev 2
3/15
Electrical characteristics
2
STD10P6F6, STP10P6F6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Drain-source breakdown
Voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 60 V
VDS = 60 V, Tc = 125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 5 A
V(BR)DSS
Table 5.
Min.
Typ.
Max.
60
Unit
V
1
10
µA
µA
±100
nA
4
V
0.15
0.18
Ω
Min
Typ.
Max.
Unit
2
Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 48 V, f=1 MHz,
VGS = 0
-
360
55
28
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48V, ID = 10 A
VGS = 10 V
Figure 3
-
7
1.4
2
-
nC
nC
nC
Warning:
4/15
Test conditions
For the P-channel Power MOSFET the actual polarity of the
voltages and the current must be reversed.
Doc ID 022967 Rev 2
STD10P6F6, STP10P6F6
Table 6.
Electrical characteristics
Switching on/off (inductive load)
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Table 7.
Test conditions
Min.
Typ.
Max.
Unit
VDD = 48 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 2
-
7.5
7
-
ns
ns
-
16.5
10
-
ns
ns
Min.
Typ.
Max.
Unit
-
10
40
A
A
1.1
V
Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 5 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A,
di/dt = 100 A/µs,
VDD = 48 V
Figure 4
-
trr
Qrr
IRRM
28
28
2
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Warning:
For the P-channel Power MOSFET the actual polarity of the
voltages and the current must be reversed.
Doc ID 022967 Rev 2
5/15
Test circuits
STD10P6F6, STP10P6F6
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 3.
AM11255v1
Figure 4.
Test circuit for diode recovery
behaviour
AM11257v1
6/15
Doc ID 022967 Rev 2
Gate charge test circuit
AM11256v1
STD10P6F6, STP10P6F6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 022967 Rev 2
7/15
Package mechanical data
Table 8.
STD10P6F6, STP10P6F6
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
R
V2
8/15
Typ.
1
0.20
0°
8°
Doc ID 022967 Rev 2
STD10P6F6, STP10P6F6
Figure 5.
Package mechanical data
DPAK (TO-252) drawing
0068772_H
Figure 6.
DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
AM08850v1
a. All dimensions are in millimeters
Doc ID 022967 Rev 2
9/15
Package mechanical data
Table 9.
STD10P6F6, STP10P6F6
TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
10/15
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 022967 Rev 2
STD10P6F6, STP10P6F6
Figure 7.
Package mechanical data
TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 022967 Rev 2
11/15
Packaging mechanical data
5
STD10P6F6, STP10P6F6
Packaging mechanical data
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
12/15
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 022967 Rev 2
18.4
22.4
STD10P6F6, STP10P6F6
Figure 8.
Packaging mechanical data
Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 9.
Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 022967 Rev 2
13/15
Revision history
6
STD10P6F6, STP10P6F6
Revision history
Table 11.
14/15
Document revision history
Date
Revision
Changes
10-May-2012
1
First release.
20-Jun-2012
2
Updated title on the coverpage.
Updated all parameter values in Table 5, Table 6 and Figure 1.
Doc ID 022967 Rev 2
STD10P6F6, STP10P6F6
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Doc ID 022967 Rev 2
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