STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET Features TAB Order codes VDSS STU75N3LLH6 TAB ID 3 < 0.0055 Ω STD75N3LLH6 STP75N3LLH6 RDS(on) max 1 3 2 DPAK 1 30 V 75 A < 0.0059 Ω IPAK TAB STU75N3LLH6-S TAB ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses 3 2 3 1 1 2 TO-220 Short IPAK Application Figure 1. Switching applications Internal schematic diagram D (TAB or 2) Description This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD75N3LLH6 STP75N3LLH6 TO-220 75N3LLH6 STU75N3LLH6 IPAK STU75N3LLH6-S Short IPAK July 2011 Doc ID 15978 Rev 4 Tube 1/21 www.st.com 21 Contents STD/P/U75N3LLH6, STU75N3LLH6-S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 8 Doc ID 15978 Rev 4 STD/P/U75N3LLH6, STU75N3LLH6-S 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 75 A ID Drain current (continuous) at TC = 70 °C 56 A ID Drain current (continuous) at TC = 100 °C 47 A Drain current (pulsed) 300 A Total dissipation at TC = 25 °C 60 W Derating factor 0.4 W/°C -55 to 175 °C ID (1) IDM (2) PTOT Tj Tstg Operating junction temperature storage temperature 1. The value is rated according to Rthj-case 2. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter DPAK Rthj-case Thermal resistance junction-case (drain) (steady state) Rthj-amb Thermal resistance junction-amb max 100 Thermal resistance junction-pcb max 35 Maximum lead temperature for soldering purpose 275 Rthj-pcb(1) TJ TO-220 IPAK Short IPAK 2.5 62.5 Unit °C/W 100 °C/W °C/W 300 275 °C 1. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec Doc ID 15978 Rev 4 3/21 Electrical characteristics 2 STD/P/U75N3LLH6, STU75N3LLH6-S Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source I = 250 µA breakdown voltage (VGS = 0) D IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS =30 V TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V Gate threshold voltage VDS = VGS, ID = 250 µA VGS(th) RDS(on) Table 5. Symbol Static drain-source on resistance Min. Typ. Max. 30 1 Unit V 1.7 1 10 µA µA ±100 nA 2.5 V VGS = 10 V, ID = 37.5 A SMD version 0.0042 0.0055 Ω VGS = 10 V, ID = 37.5 A 0.0046 0.0059 Ω VGS = 4.5 V, ID = 37.5 A SMD version 0.0065 0.008 Ω VGS = 4.5 V, ID = 37.5 A 0.0069 0.0084 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit 1350 230 140 1690 290 176 2030 350 210 pF pF pF Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 75 A, VGS = 4.5 V (see Figure 14) 17 8 6 23.8 11.2 8.4 nC nC nC Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD=15 V, ID = 75 A VGS =5 V (Figure 19) 3.9 5.5 nC 4.1 5.7 nC Gate input resistance f=1 MHz gate bias Bias=0 test signal level=20 mV open drain 1.7 2 Ω Qgs1 Qgs2 RG 4/21 On/off states Doc ID 15978 Rev 4 1.25 STD/P/U75N3LLH6, STU75N3LLH6-S Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Parameter VSD (2) Forward on voltage IRRM VDD = 15 V, ID = 37.5 A RG = 4.7 Ω VGS = 5 V (see Figure 13) Min. Typ. Max Unit - 9.5 30 37 12 - ns ns ns ns Min. Typ. Max. Unit - 75 300 A A - 1.1 V Source drain diode ISDM (1) trr Qrr Test conditions Turn-on delay time Rise time Turn-off delay time Fall time Source-drain current Source-drain current (pulsed) ISD Electrical characteristics Test conditions ISD = 37.5 A, VGS = 0 ISD = 75 A, Reverse recovery time di/dt = 100 A/µs, Reverse recovery charge VDD = 24 V Reverse recovery current (see Figure 15) - 24 16.8 1.4 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15978 Rev 4 5/21 Electrical characteristics STD/P/U75N3LLH6, STU75N3LLH6-S 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance !-V )$ ! 280dpc K δ=0.5 S AI RE SA $3ON I H T IN AX2 ON ATI BYM R E D /P ITE ,IM 0.2 S 0.1 0.05 -1 10 0.02 MS 4J # 4C # Figure 4. ID (A) MS 3INGLE PULSE tp -2 6$36 Output characteristics 10 -5 10 Single pulse Figure 5. AM05505v1 VGS=10V Zth=k Rthj-c δ=tp/τ 0.01 6V -4 τ -2 -3 10 -1 10 10 tp (s) 10 Transfer characteristics !-V )$ ! 250 5V 200 150 4V 100 50 0 0 Figure 6. 3V 1 2 4 5 VDS(V) Normalized BVDSS vs temperature AM05507v1 BVDSS (norm) Figure 7. 4.35 1.04 4.30 1.02 4.25 1.00 4.20 0.98 4.15 0.96 4.10 0.94 4.05 0 25 50 75 100 125 150 TJ(°C) 6'36 Static drain-source on resistance AM05508v1 RDS(on) (Ω) 1.06 0.92 -50 -25 6/21 3 4.00 0 Doc ID 15978 Rev 4 5 10 15 20 25 30 ID(A) STD/P/U75N3LLH6, STU75N3LLH6-S Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM05509v1 VGS (V) VDD=15V ID=75A 12 Capacitance variations AM05510v1 C (pF) 2500 10 2000 Ciss 8 1500 6 1000 4 500 2 0 0 20 10 40 30 50 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM05511v1 VGS(th) (norm) 1.2 Coss Crss 0 0 10 20 VDS(V) Figure 11. Normalized on resistance vs temperature AM05512v1 RDS(on) (norm) 1.8 1.6 1.4 1.0 1.2 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 -50 -25 25 50 0 75 100 125 150 TJ(°C) 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM00896v1 VSD (V) TJ=-55°C 1.0 0.9 0.8 0.7 TJ=25°C TJ=150°C 0.6 0.5 0.4 0 10 20 30 40 50 60 70 ISD(A) Doc ID 15978 Rev 4 7/21 Test circuits 3 STD/P/U75N3LLH6, STU75N3LLH6-S Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/21 0 Doc ID 15978 Rev 4 10% AM01473v1 STD/P/U75N3LLH6, STU75N3LLH6-S Test circuits Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 15978 Rev 4 9/21 Package mechanical data 4 STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/21 Doc ID 15978 Rev 4 STD/P/U75N3LLH6, STU75N3LLH6-S Table 8. Package mechanical data Short IPAK mechanical dimensions mm Dim. Min Typ Max A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.25 e1 4.40 4.60 H 9.80 10.40 L 3.00 3.40 L1 0.80 1.20 L2 0.80 1.00 Figure 20. Short IPAK mechanical drawing ?! Doc ID 15978 Rev 4 11/21 Package mechanical data Table 9. STD/P/U75N3LLH6, STU75N3LLH6-S DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 21. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 12/21 Doc ID 15978 Rev 4 AM08850v1 STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Figure 22. DPAK (TO-252) drawing 0068772_H Doc ID 15978 Rev 4 13/21 Package mechanical data Table 10. STD/P/U75N3LLH6, STU75N3LLH6-S IPAK (TO-251) mechanical data mm. DIM. min. typ A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 14/21 max. 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 15978 Rev 4 1.00 STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Figure 23. IPAK (TO-251) drawing 0068771_H AM09214V1 Doc ID 15978 Rev 4 15/21 Package mechanical data Table 11. STD/P/U75N3LLH6, STU75N3LLH6-S TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15978 Rev 4 STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Figure 24. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15978 Rev 4 17/21 Packaging mechanical data 5 STD/P/U75N3LLH6, STU75N3LLH6-S Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 18/21 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 15978 Rev 4 18.4 22.4 STD/P/U75N3LLH6, STU75N3LLH6-S Packaging mechanical data Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 15978 Rev 4 19/21 Revision history 6 STD/P/U75N3LLH6, STU75N3LLH6-S Revision history Table 13. 20/21 Document revision history Date Revision Changes 01-Jul-2009 1 First issue. 02-Oct-2009 2 – Added device in Short IPAK. – Document status promoted from preliminary data to datasheet. 19-Apr-2011 3 – Added max values in Table 5: Dynamic. – Added new package and mechanical data. – Inserted new ID value @ 70 °C (see Table 2: Absolute maximum ratings) 04-Jul-2011 4 Updated: mechanical data Doc ID 15978 Rev 4 STD/P/U75N3LLH6, STU75N3LLH6-S Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15978 Rev 4 21/21