STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5 30 V 0.0084 Ω 48 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 3 1 2 TO-220 3 3 2 1 DPAK 1 IPAK Application Figure 1. ■ Internal schematic diagram Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order codes Marking Package Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel STP60N3LH5 60N3LH5 TO-220 Tube STU60N3LH5 60N3LH5 IPAK Tube April 2009 Doc ID 14079 Rev 3 1/16 www.st.com 16 Contents STD60N3LH5, STP60N3LH5, STU60N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-Source voltage ± 22 V ID (1) Drain current (continuous) at TC = 25 °C 48 A ID Drain current (continuous) at TC = 100 °C 42.8 A Drain current (pulsed) 192 A Total dissipation at TC = 25 °C 60 W Derating factor 0.4 W/°C Single pulse avalanche energy 160 mJ Operating junction temperature Storage temperature -55 to 175 °C IDM (2) PTOT EAS (3) Tj Tstg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V Table 3. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj Doc ID 14079 Rev 3 3/16 Electrical characteristics 2 STD60N3LH5, STP60N3LH5, STU60N3LH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V,Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS= VGS, ID = 250 µA V(BR)DSS VGS(th) RDS(on) Table 5. Symbol Static drain-source on resistance Max. 30 Unit V ±100 nA 1.8 3 V VGS= 10 V, ID= 24 A SMD version 0.0072 0.008 Ω VGS= 10 V, ID= 24 A 0.0076 0.0084 Ω VGS= 5 V, ID= 24 A SMD version 0.0088 0.011 Ω VGS= 5 V, ID= 24 A 0.0092 0.0114 Ω 1 Dynamic Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd RG Typ. µA µA Test conditions Qgs2 Min. 1 10 Parameter Qgs1 4/16 Static Min. Typ. VDS =25 V, f=1 MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 48 A VGS =5 V (Figure 14) Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD=15 V, ID = 48 A VGS =5 V (Figure 19) - Gate input resistance f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain - Doc ID 14079 Rev 3 Max. Unit - 1350 265 32 - pF pF pF - 8.8 4.7 2.2 - nC nC nC 2.2 nC - 2.5 1.1 nC - Ω STD60N3LH5, STP60N3LH5, STU60N3LH5 Table 6. Symbol Electrical characteristics Switching on/off (resistive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 6 33 - ns ns td(off) tf Turn-off delay time Fall time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 19 4.2 - ns ns Min. Typ. Max. Unit - 48 192 A A 1.1 V Table 7. Source drain diode Symbol Parameter ISD ISDM Source-drain current Source-drain current (pulsed)(1) VSD Forward on voltage ISD=24 A, VGS=0 - trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current ISD=48 A, di/dt =100 A/µs, VDD=20 V, (Figure 15) - IRRM Test conditions 25 18.5 1.5 ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14079 Rev 3 5/16 Electrical characteristics STD60N3LH5, STP60N3LH5, STU60N3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics AM03360v1 ID (A) 70 60 50 40 30 20 10 0 0 Figure 6. 6/16 Normalized BVDSS vs temperature Figure 7. Doc ID 14079 Rev 3 1 2 3 VGS(V) Static drain-source on resistance STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 14079 Rev 3 7/16 Test circuits 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/16 Figure 18. Switching time waveform Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Test circuits Figure 19. Gate charge waveform Doc ID 14079 Rev 3 9/16 Package mechanical data 4 STD60N3LH5, STP60N3LH5, STU60N3LH5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 (L1) 0.80 9.40 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 14079 Rev 3 11/16 Package mechanical data STD60N3LH5, STP60N3LH5, STU60N3LH5 TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 14079 Rev 3 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 13/16 Packaging mechanical data 5 STD60N3LH5, STP60N3LH5, STU60N3LH5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 14079 Rev 3 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD60N3LH5, STP60N3LH5, STU60N3LH5 6 Revision history Revision history Table 8. Document revision history Date Revision 19-Oct-2007 1 First release 23-Sep-2008 2 VGS value has been changed on Table 2 and Table 5 3 – Inserted typical adn maximum value in VGS(th) parameter – Figure 5: Transfer characteristics has been updated – Added device in TO-220 20-Apr-2009 Changes Doc ID 14079 Rev 3 15/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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