STB120N4F6 STD120N4F6 N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS(on) max. ID STB120N4F6 40 V 4 mΩ 80 A (1) STD120N4F6 40 V 4 mΩ 80 A (1) 3 1. Current limited by package ■ Standard threshold drive ■ 100% avalanche tested 3 1 1 DPAK D²PAK Application ■ Switching applications ■ Automotive Figure 1. Internal schematic diagram Description $4!"OR These devices are 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. Device summary Order codes Marking STB120N4F6 Package D²PAK 120N4F6 STD120N4F6 May 2011 Packaging Tape and reel DPAK Doc ID 17042 Rev 5 1/18 www.st.com 18 Contents STB120N4F6, STD120N4F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/18 .............................................. 8 Doc ID 17042 Rev 5 STB120N4F6, STD120N4F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area Table 3. Thermal resistance Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max (1) D²PAK 1.36 50 °C/W 35 °C/W 1. When mounted on 1 inch2 2 oz. Cu board. Table 4. Thermal resistance Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not-repetitive 40 A EAS (2) Single pulse avalanche energy 394 mJ 1. Pulse width limited by Tj max 2. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V Doc ID 17042 Rev 5 3/18 Electrical characteristics 2 STB120N4F6, STD120N4F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS = 20 V,Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A V(BR)DSS Table 6. Symbol Ciss Coss Crss Qg Min. Typ. Max. 40 Unit V 1 10 µA µA ±100 nA 4 V 3.5 4.0 mΩ Min Typ. Max. Unit - 3850 650 350 - pF pF pF - 65 20 16 - nC nC nC - 1.5 - Ω 2 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 V VDD = 20 V, ID = 80 A Qgd Total gate charge Gate-source charge Gate-drain charge RG Intrinsic gate resistance f = 1 MHz open drain Qgs 4/18 Static VGS = 10 V (see Figure 14) Doc ID 17042 Rev 5 STB120N4F6, STD120N4F6 Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Rise time VDD = 20 V, ID = 40 A, Turn-off delay time Fall time (see Figure 15) Min. Typ. Max. Unit - 20 70 - ns ns - 40 20 - ns ns Min. Typ. Max. Unit - 80 320 A A - 1.1 V RG = 4.7 Ω, VGS = 10 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) ISD = 40 A, VGS = 0 Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 30 V (see Figure 17) - 40 56 2.8 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17042 Rev 5 5/18 Electrical characteristics STB120N4F6, STD120N4F6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM08627v1 ID (A) Tj=175°C is ea ar (on) s i DS th in ax R n tio y m a er d b Op ite Lim 100 Tc=25°C Single pulse 100µs 1ms 10 10ms 1 0.1 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM08628v1 ID (A) VGS=10V 350 AM08629v1 ID (A) VDS=2V 300 300 6V 250 200 200 150 150 100 5V 100 50 50 0 0 Figure 6. 4V 1 2 4 3 5 6 7 8 Normalized BVDSS vs temperature AM08630v1 BVDSS 0 0 VDS(V) (norm) Figure 7. RDS(on) (mΩ) 1.15 1 2 3 4 5 VGS(V) Static drain-source on resistance AM08631v1 VGS=10V 4.5 1.10 4.0 1.05 1.00 3.5 0.95 3.0 0.90 2.5 0.85 0.80 -75 6/18 2.0 -25 25 75 125 175 TJ(°C) Doc ID 17042 Rev 5 20 40 60 80 ID(A) STB120N4F6, STD120N4F6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM08632v1 VGS (V) Capacitance variations AM08633v1 C (pF) VDD=20V ID=80A 10 Ciss 1000 8 Coss 6 Crss 100 4 2 0 0 10 20 30 40 50 60 70 10 Figure 10. Normalized gate threshold voltage vs temperature AM08634v1 VGS(th) 0.1 Qg(nC) (norm) 1.2 1 10 VDS(V) Figure 11. Normalized on resistance vs temperature AM08635v1 RDS(on) (norm) VGS=10V ID=40A 2.0 1.0 1.5 0.8 1.0 0.6 0.5 0.4 0.2 -75 25 -25 75 125 175 TJ(°C) 0 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM08636v1 VSD (V) TJ=-55°C 1.0 0.9 0.8 TJ=25°C 0.7 TJ=175°C 0.6 0.5 0.4 10 20 30 40 50 60 70 80 ISD(A) Doc ID 17042 Rev 5 7/18 Test circuits 3 STB120N4F6, STD120N4F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/18 0 Doc ID 17042 Rev 5 10% AM01473v1 STB120N4F6, STD120N4F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17042 Rev 5 9/18 Package mechanical data Table 9. STB120N4F6, STD120N4F6 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/18 Max. 0.4 0° 8° Doc ID 17042 Rev 5 STB120N4F6, STD120N4F6 Package mechanical data Figure 19. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint Figure 20. D²PAK (TO-263) drawing 0079457_R a. All dimension are in millimeters Doc ID 17042 Rev 5 11/18 Package mechanical data Table 10. STB120N4F6, STD120N4F6 DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 21. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 b. All dimension are in millimeters 12/18 Doc ID 17042 Rev 5 AM08850v1 STB120N4F6, STD120N4F6 Package mechanical data Figure 22. DPAK (TO-252) drawing 0068772_H Doc ID 17042 Rev 5 13/18 Packaging mechanical data 5 STB120N4F6, STD120N4F6 Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 14/18 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 17042 Rev 5 Min. Max. 330 13.2 26.4 30.4 STB120N4F6, STD120N4F6 Table 12. Packaging mechanical data DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 17042 Rev 5 18.4 22.4 15/18 Packaging mechanical data STB120N4F6, STD120N4F6 Figure 23. Tape for DPAK (TO-252) and D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 24. Reel for DPAK (TO-252) and D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 Doc ID 17042 Rev 5 STB120N4F6, STD120N4F6 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 09-Feb-2010 1 First release 29-Oct-2010 2 Document status promoted from preliminary data to datasheet. 11-Nov-2010 3 Corrected RDS(on) value in Table 5: Static. 13-May-2011 4 Removed package and mechanical data: TO-220 17-May-2011 5 Description in cover page has been updated. Doc ID 17042 Rev 5 17/18 STB120N4F6, STD120N4F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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