STMICROELECTRONICS TPDV1240RG

TPDVxx40
40 A high voltage Triacs
Features
A2
■
On-state current (IT(RMS)): 40 A
■
Max. blocking voltage (VDRM/VRRM): 1200 V
■
Gate current (IGT): 200 mA
■
Commutation @ 10 V/µs: up to 142 A/ms
■
Noise immunity: 500 V/µs
■
insulated package:
– 2,500 V rms (UL recognized: E81734).
G
Description
A1
A1
A2
The TPDVxx40 series use a high performance
alternistor technology.
G
TOP3 insulated
Featuring very high commutation levels and high
surge current capability, this family is well adapted
to power control on inductive load (motor,
transformer...)
Table 1.
Device summary
Parameter
Blocking voltage VDRM/VRRM
TPDV640RG
TPDV840RG
TPDV1240RG
600 V
800 V
1200 V
40 A
On-state current IT(RMS)
Gate current IGT
March 2011
200 mA
Doc ID 18270 Rev 1
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7
Characteristics
TPDVxx40
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
IT(RMS)
Parameter
On-state rms current (180° conduction angle)
Tc = 75 °C
ITSM
tp = 8.3 ms
Tj = 25 °C
t
dI/dt
VDRM
VRRM
2
TL
A
I t value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA , dIG/dt = 1 A/µs
Repetitive F = 50 Hz
20
Non repetitive
100
TPDV640
600
Repetitive peak off-state voltage
A
350
Tj = 25 °C
A2S
610
A/µs
TPDV840
Tj = 125 °C
800
TPDV1240
Tstg
Tj
40
370
tp = 10 ms
I2
Unit
590
tp = 2.5 ms
Non repetitive surge peak on-state
current
Value
V
1200
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
260
°C
2500
V
Maximum lead temperature for soldering during 10s at 2mm from case
VINS(RMS)(1) Insulation rms voltage
1. A1, A2, gate terminals to case for 1 minute
Table 3.
Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
IGT
VGT
VGD
tgt
IH
(1)
Test conditions
Quadrant
VD = 12 V DC, RL = 33 Ω
VD = VDRM
Unit
MAX.
200
mA
MAX.
1.5
V
I - II - III
MIN.
0.2
V
I - II - III
TYP.
2.5
µs
MAX.
50
mA
I - II - III
RL = 3.3 kΩ
Tj = 125 °C
VD = VDRM IG = 500 mA dIG/dt = 3 A/µs
IT = 500 mA
Value
Gate open
I - III
IL
dV/dt
VTM (1)
IDRM
IRRM
(dI/dt)c (1)
IG = 1.2 x IGT
Linear slope up to:
VD = 67 % VDRM Gate open
ITM = 35 A
II
Tj = 125 °C
tp = 380 µs
VDRM = VRRM
Tj = 25 °C
mA
200
MIN.
500
V/µs
MAX.
1.8
V
20
µA
8
mA
MAX.
Tj = 125 °C
(dV/dt)c = 200 V/µs
(dV/dt)c = 10 V/µs
35
Tj = 125 °C
1. For either polarity of electrode A2 voltage with reference to electrode A1.
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100
TYP.
Doc ID 18270 Rev 1
MIN.
A/ms
142
TPDVxx40
Table 4.
Characteristics
Gate characteristics (maximum values)
Symbol
Parameter
PG(AV)
Value
Unit
1
W
Average gate power dissipation
PGM
Peak gate power dissipation
tp = 20 µs
40
W
IGM
Peak gate current
tp = 20 µs
8
A
VGM
Peak positive gate voltage
tp = 20 µs
16
V
Value
Unit
Junction to ambient
50
°C/W
Rth(j-c) DC
Junction to case for DC
1.2
°C/W
Rth(j-c) AC
Junction to case for 360 °Conduction angle (F = 50 Hz)
0.9
°C/W
Table 5.
Thermal resistance
Symbol
Parameter
Rth(j-a)
Figure 1.
Max. rms power dissipation versus Figure 2.
on-state rms current (F = 50 Hz).
(curves limited by (dI/dt)c)
P(W)
Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
P(W)
60
Tcase(°C)
60
α = 180°
Rth = 0.25°C/W
50
75
50
Rth = 0.75°C/W
α = 120°
40
40
Rth = 0°C/W
85
Rth = 0.5°C/W
α = 90°
30
30
95
20
105
α = 60°
20
α = 30°
180°
10
α
α
IT(RMS)(A)
115
10
Tamb(°C)
125
0
0
0
5
Figure 3.
10
15
20
25
30
35
40
On-state rms current versus case
temperature
0
20
Figure 4.
IT(RMS)(A)
40
60
80
100
120
140
Relative variation of thermal
impedance versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
50
1.00
α = 180°
Zth(j-c)
40
0.10
30
Zth(j-a)
20
0.01
10
Tcase(°C)
tp(s)
0
0
25
50
75
100
125
0.0
1E-3
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1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
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Characteristics
Figure 5.
TPDVxx40
Relative variation of gate trigger
Figure 6.
current and holding current versus
junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
Non repetitive surge peak on-state
current versus number of cycles
ITSM(A)
2.5
350
300
2
tp=10ms
250
One cycle
IGT
1.5
200
Tj initial=25°C
1
150
IH & IL
100
0.5
50
Number of cycles
Tj(°C)
0
0
-40 -30 -20 -10
Figure 7.
0
10 20
30
40 50
60 70 80
1
90 100 110 120 130
10
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse and
corresponding values of I2t
2
100
1000
On-state characteristics (maximum
values)
ITM(A)
2
ITSM(A), I t (A s)
1000
10000
Tj initial = 25°C
Tj=max
100
1000
ITSM
I2t
Tj=25°C
10
100
1
Figure 9.
1
2
5
10
1
2
3
Safe operating area below curve
(dV/dt)c(V/µs)
1000
Tj initial = 25°C
100
10
(dI/dt)c(A/ms)
1
4/7
Tj max.:
Vt0=1.02V
Rd=12mΩ
VTM(V)
tp(ms)
1
100
Doc ID 18270 Rev 1
1000
4
5
6
TPDVxx40
2
Package information
Package information
●
Epoxy meets UL94,V0
●
Cooling method: C (by conduction)
●
Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TOP3 insulated dimensions
Dimensions
Ref.
H
R
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
1.45
1.55
0.057
0.061
C
14.35
15.60
0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5
0.622
0.650
G
20.4
21.1
0.815
0.831
H
15.1
15.5
0.594
0.610
J
5.4
5.65
0.213
0.222
K
3.4
3.65
0.134
0.144
ØL
4.08
4.17
0.161
0.164
P
1.20
1.40
0.047
0.055
A
B
ØL
K
F
P
G
C
J
J
D
E
R
Doc ID 18270 Rev 1
4.60 typ.
0.181 typ.
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Ordering information
3
Ordering information
Table 7.
4
Ordering information
Order code
Marking
TPDV640RG
TPDV640
TPDV840RG
TPDV840
TPDV1240RG
TPDV1240
Package
Weight
TOP3
insulated
4.5 g
Revision history
Table 8.
6/7
TPDVxx40
Document revision history
Date
Revision
30-mar-2011
1
Changes
First issue.
Doc ID 18270 Rev 1
Base qty Delivery mode
30
Tube
TPDVxx40
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