TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES (V) VGES (V) IC (A) 1200 ±20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features Block Diagram ● 1200V NPT Trench Technology ● High Speed Switching ● Low Conduction Loss Ordering Information Part No. TSG25N120CN C0 Package Packing TO-3PN 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 50 A 25 A ICM 75 A IF 25 A IFM 75 A o Continuous Current TC=25 C o TC=100 C Pulsed Collector Current * Diode Forward Current (TC=100℃) Diode Pulse Forward Current IC o Max Power Dissipation TJ=25 C 312 o TJ=100 C Operating Junction Temperature PD TJ Storage Temperature Range * Repetitive rating: Pulse width limited by max. junction temperature 1/9 TSTG W 125 -55 to +150 ºC -55 to +150 o C Version: B12 TSG25N120CN N-Channel IGBT with FRD. Thermal Performance Parameter Symbol IGBT Thermal Resistance - Junction to Case Limit 0.4 RӨJC DIODE Thermal Resistance - Junction to Ambient Unit o 2.2 RӨJA C/W 40 Electrical Specifications (Tc=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVCES 1200 -- -- V Static Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA Zero Gate Voltage Collector Current VCE = 1200V, VGE = 0V ICES -- -- 1 mA Gate-Emitter Leakage Current VGE = 20V, VCE = 0V IGES -- -- ±250 nA Gate-Emitter Threshold Voltage VGE = VCE, IC = 25mA VGE(TH) 3.0 5.0 7.0 V VGE = 15V,IC =25A, TJ=25ºC VCE(SAT) -- 1.9 2.5 V VGE = 15V,IC =25A, TJ=125ºC VCE(SAT) -- 2.2 -- V CIES -- 4000 -- COES -- 105 -- CRES -- 72 -- td(on) -- 57 -- tr -- 65 -- td(off) -- 240 -- tf -- 86 160 Eon -- 4.15 6.22 Turn-Off Switching Loss Eoff -- 0.87 1.31 Total Switching Loss Ets -- 5.02 7.53 Turn-On Delay Time td(on) -- 41 -- tr -- 57 -- td(off) -- 265 -- tf -- 168 -- Eon -- 4.46 6.69 Turn-Off Switching Loss Eoff -- 1.74 2.61 Total Switching Loss Ets -- 6.2 9.3 Qg -- 170 255 Qge -- 27 41 Qgc -- 60 90 Collector-Emitter Saturation Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1.0MHz pF Switching Turn-On Delay Time Rise Time Turn-Off Delay Time VCC = 600V, IC = 25A, Fall Time RG = 10Ω, VGE = 15V Turn-On Switching Loss o Inductive Load, TJ=25 C Rise Time Turn-Off Delay Time VCC = 600V, IC = 25A, Fall Time RG = 10Ω, VGE = 15V Turn-On Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge o Inductive Load, TJ=125 C VCC = 600V, IC = 25A, VGE = 15V 2/9 nS mJ nS mJ nC Version: B12 TSG25N120CN N-Channel IGBT with FRD. Electrical Specifications of the DIODE (Tc=25oC unless otherwise noted) Parameter Conditions Symbol o Diode Forward Voltage IF = 25A, TJ=25 C o TJ=125 C VFM o TJ=25 C Reverse Recovery Time Reverse Recovery Current o TJ=125 C IF = 25A, dl/dt=200A/us tfr o TJ=25 C o TJ=125 C Ifr o Reverse Recovery Charge TJ=25 C o TJ=125 C 3/9 Qfr Min Typ Max Unit -- 2.0 2.5 V -- 2.18 -- V -- 300 480 -- 360 -- -- 27 41 -- 31 -- -- 4000 6000 -- 5580 -- ns A nC Version: B12 TSG25N120CN N-Channel IGBT with FRD. Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Saturation voltage characteristics Saturation voltage vs. collector current Saturation voltage vs. gate bias Saturation voltage vs. gate bias Capacitance characteristics 4/9 Version: B12 TSG25N120CN N-Channel IGBT with FRD. Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Turn on time vs. gate resistance Turn off time vs. gate resistance Switching loss vs. gate resistance Turn on time vs. collector current Turn off time vs. collector current Switching loss vs. collector current 5/9 Version: B12 TSG25N120CN N-Channel IGBT with FRD. Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Gate charge characteristics SOA Characteristics RBSOA Conduction characteristics Reverse recovery current vs. forward current Stored recovery charge vs. forward current 6/9 Version: B12 TSG25N120CN N-Channel IGBT with FRD. Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Reverse recovery time vs. forward current Normalized Thermal Transient Impedance, Junction-to-Ambient 7/9 Version: B12 TSG25N120CN N-Channel IGBT with FRD. TO-3PN Mechanical Drawing Unit: Millimeters 8/9 Version: B12 TSG25N120CN N-Channel IGBT with FRD. Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: B12