TSC TSM2N70CPRO

TSM2N70
700V N-Channel Power MOSFET
TO-220
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
700
6.5 @ VGS =10V
1
General Description
The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp
ballast based on half bridge.
Block Diagram
Features
●
●
●
●
Low RDS(ON) 6.5Ω (Max.)
Low gate charge typical @ 9.5nC (Typ.)
Low Crss typical @ 4.5pF (Typ.)
Fast Switching
Ordering Information
Part No.
Package
Packing
TO-220
TO-251
TO-251
TO-252
TO-252
50pcs / Tube
70pcs / Tube
70pcs / Tube
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
TSM2N70CZ C0
TSM2N70CH C5
TSM2N70CH C5G
TSM2N70CP RO
TSM2N70CP ROG
N-Channel MOSFET
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Repetitive avalanche Current
Single Pulse Avalanche Energy (Note 2)
o
Maximum Power Dissipation @TC = 25 C
Operating Junction Temperature
Storage Temperature Range
Symbol
Limit
Unit
VDS
VGS
ID
IDM
IAR
EAS
PTOT
TJ
TSTG
700
±30
2
8
2
110
45
150
-55 to +150
V
V
A
A
A
mJ
W
ºC
o
C
Symbol
Limit
* Limited by maximum junction temperature
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
1/10
2.78
100
Unit
o
C/W
C/W
o
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mA
BVDSS
700
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 1A
RDS(ON)
--
5.25
6.5
Ω
Gate Threshold Voltage
VDS = VGS, ID = 50uA
VGS(TH)
2
--
4
V
Zero Gate Voltage Drain Current
VDS = 700V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS = 15V, ID = 0.8A
gfs
--
1.7
--
S
Diode Forward Voltage
IS = 1.6A, VGS = 0V
VSD
--
--
1.6
V
Qg
--
9.5
13
Qgs
--
1.6
--
Qgd
--
4.0
--
Ciss
--
320
--
Coss
--
35
--
Crss
--
4.5
--
td(on)
--
18.4
--
tr
--
35
--
td(off)
--
32
--
tf
--
34
--
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 480V, ID = 2A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, ID = 0.8A,
Turn-Off Delay Time
VDD = 350V, RG = 4.7Ω
Turn-Off Fall Time
nS
Reverse Recovery Time
VGS = 0V, IS = 1.3A,
tfr
--
474.2
--
nS
Reverse Recovery Charge
VDD = 25V
Qfr
--
2067.8
--
uC
--
5.16
--
A
dIF/dt = 100A/us
Reverse Recovery Current
IRRM
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=2A, L=56mH, RG=25Ω
3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5%
4. Essentially Independent of Operating Temperature
5. For design reference only, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
6/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
6.350
0.250
0.381
1.106
0.015
0.040
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
0.508
1.397
0.020
0.055
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
7/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
8/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
9/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
10/10
Version: B11