TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● Low RDS(ON) 6.5Ω (Max.) Low gate charge typical @ 9.5nC (Typ.) Low Crss typical @ 4.5pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TO-220 TO-251 TO-251 TO-252 TO-252 50pcs / Tube 70pcs / Tube 70pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel TSM2N70CZ C0 TSM2N70CH C5 TSM2N70CH C5G TSM2N70CP RO TSM2N70CP ROG N-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Repetitive avalanche Current Single Pulse Avalanche Energy (Note 2) o Maximum Power Dissipation @TC = 25 C Operating Junction Temperature Storage Temperature Range Symbol Limit Unit VDS VGS ID IDM IAR EAS PTOT TJ TSTG 700 ±30 2 8 2 110 45 150 -55 to +150 V V A A A mJ W ºC o C Symbol Limit * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJC RӨJA 1/10 2.78 100 Unit o C/W C/W o Version: B11 TSM2N70 700V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 700 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1A RDS(ON) -- 5.25 6.5 Ω Gate Threshold Voltage VDS = VGS, ID = 50uA VGS(TH) 2 -- 4 V Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 15V, ID = 0.8A gfs -- 1.7 -- S Diode Forward Voltage IS = 1.6A, VGS = 0V VSD -- -- 1.6 V Qg -- 9.5 13 Qgs -- 1.6 -- Qgd -- 4.0 -- Ciss -- 320 -- Coss -- 35 -- Crss -- 4.5 -- td(on) -- 18.4 -- tr -- 35 -- td(off) -- 32 -- tf -- 34 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 480V, ID = 2A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 0.8A, Turn-Off Delay Time VDD = 350V, RG = 4.7Ω Turn-Off Fall Time nS Reverse Recovery Time VGS = 0V, IS = 1.3A, tfr -- 474.2 -- nS Reverse Recovery Charge VDD = 25V Qfr -- 2067.8 -- uC -- 5.16 -- A dIF/dt = 100A/us Reverse Recovery Current IRRM Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=2A, L=56mH, RG=25Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5% 4. Essentially Independent of Operating Temperature 5. For design reference only, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 9/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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