, One. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SB1604 Silicon PNP Power Transistor DESCRIPTION • High-speed Switching 2 • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@lc= -10A • Full-pack Package With Outstanding Insulation, •^ ™ Which Can Be Installed to The Heat Sink With One Screw 3 PIN 1.BASE 2. COLLECTOR 3. BETTER APPLICATIONS 1 2 3 • Designed for low-voltage switching and general purpose TO-220F package applications. a - C -S* ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT 1 "f " r - T K-V9 ' io;;; oj i r— Collector-Base Voltage -40 V * i Vceo Collector-Emitter Voltage -20 V .L , .• , .'. •. , H ' * I v "" * t " R- Emitter-Base Voltage -5 Collector Current-Continuous -10 ; 1A ! i i ', < : ' i ; ' V - -0 Ic , ..:;;; K VEBO < -•->'.'; ' VCBO ~"f » ; o ,-••, <>! U ;' A - N - J -- mm I CM Collector Current-Peak -20 A Collector Power Dissipation @ Ta=25°C 2 W Collector Power Dissipation @ Tc=25"C 40 W Junction Temperature 150 'C -55-150 °c PC Tj Tstg Storage Temperature Range DIM WIN A 14.95 B 10.00 C 4.40 D 0.75 3.10 F H 3.70 J 0.50 K 13.4 1.10 L 5.00 N 2.70 Q R 2.20 S 2.65 a 6.40 MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SB1604 ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage lc = -10mA, IB = 0 VcE(sat) Collector-Emitter Saturation Voltage lc=-10A; IB=-0.33A -0.6 V VBE(sat) Base-Emitter Saturation Voltage I C =-10A;I B =-0.33A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -50 uA hpE-1 DC Current Gain lc=-0.1A;V CE =-2V 45 hFE-2 DC Current Gain lc= -3A; VCE= -2V 90 Current-Gain — Bandwidth Product IE= 0.5A; VCE= -10V;f=10MHz fr -20 V 260 30 MHz 0.1 us 0.5 us 0.1 us Switching Times ton Turn-on Time tstg Storage Time Fall Time tf • hpE-2 Classifications Q P 90-180 130-260 lc=-3A;lBi=-l B 2=-0.1A,