, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1907 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -SOV(Min) 3. EMITTER • Good Linearity of hFE 1 • Complement to Type 2SC5099 2 TO-3PML package 3 APPLICATIONS • Designed for audio and general purpose applications >} ,,-, (5)11 ' ; ; : ' 1U i : ; ig) "V-, © i:. f ) r A So ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V Ic Collector Current-Continuous -6 A IB Base Current-Continuous -3 A PC Collector Power Dissipation @ TC=25'C 60 W Tj Junction Temperature 150 'C -55-150 r f\- mm Tstg Storage Temperature Range DIM A B C D F G H J K L N U R S U y z MIM mm 19,90 15.90 5.50 0.90 3.30 2.90 5.90 0.595 22,30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 MAX 20.10 16.10 5,70 1.10 3.50 3.10 6.10 0.605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify (hat datasheets nre current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1907 ELECTRICAL CHARACTERISTICS Tc=25°C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; le= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -10 uA IEBO Emitter Cutoff Current VEB= -6V; lc= 0 -10 uA hFE DC Current Gain lc= -2A; VCE= -4V COB Collector Output Capacitance I E =0; VCB=-10V;f=1MHz 150 PF Current-Gain — Bandwidth Product I E =0.5A;V CE =-12V 20 MHz 0.18 us 1.10 us 0.21 us fr CONDITIONS WIN TYP. MAX -80 UNIT V 50 Switching times ton Turn-on Time tstg Storage Time tf IC=-3A, R L =10fi, |B1=.|B2=-0.3A, Vcc= -30V Fall Time classifications o P Y 50-100 70-140 90-180