, One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1503 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation VoltagePIN 1.BASE : VcE<satr -2.5V(Max.)@lc= -7A • Complement to Type 2SD2276 2. COLLECTOR 1 2 TO-3PL package 3 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -7 A mm Ic ICM Collector Current-Peak -12 Collector Power Dissipation @ TC=25°C 120 W PC Collector Power Dissipation @ Ta=25'C Tj A Junction Temperature 3.5 150 °C DIM A B C D E F G H J K N P q R Tstg Storage Temperature Range -55-150 °c u w MIN MAX 25,50 26.50 19.80 4.50 0.90 2,30 2.40 10.80 3.10 0.50 20 JO 5.50 1.10 JJO 2.60 11.00 S.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 20.00 3.90 2.40 3.10 1.90 3.90 2.90 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2SB1503 Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -7A; IB= -7mA -2.5 V VeE(sat) Base-Emitter Saturation Voltage lo= -7A; IB= -7mA -3.0 V ICBO Collector Cutoff Current V G B=-160V;I E =0 -100 uA ICEO Collector Cutoff Current VCE=-140V; I B =0 -100 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -100 uA hpE-1 DC Current Gain lc=-1A;V CE =-5V 2000 hpE-2 DC Current Gain lc= -7A; VCE= -5V 5000 Current-Gain— Bandwidth Product lc=-0.5A;VCE=-10V fl CONDITIONS MIN TYP. UNIT SYMBOL MAX V -140 30000 20 MHz 1.0 us 1.5 us 1.2 11 S Switching Times ton Turn-on Time Utg Storage Time lc= -7A; IB1= -\B2- -7mA, Vcc= -50V Fall Time tf hpE-2 Classifications Q S P 5000-15000 7000-21000 8000-30000