!j£Ti£ty ^s-rni-dondudtoi ^Pioducti, <_/ \^f 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1647 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min) • High DC Current Gain: hFE= 5000( Min.) @(lc= -10A, VCE= -4V) 2. COLLECTOR • Low Collector Saturation Voltage- S-EMIHER : VCE(sat)= -2.5V(Max)@ (lc= -10A, IB= -10mA) 1 • Complement to Type 2SD2560 2 TO-3PN package 3 B Ut "~ "•• * •*- ."*•••• ..... APPLICATIONS • Designed for audio, series regulator and general purpose applications. H f ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V Ic Collector Current-Continuous -15 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=25'C 130 W Tj Junction Temperature 150 •c DIM A B C D E F G H J K L N Q R °c U Y Tstg Storage Temperature -55-150 ^ ry ^ |L| ^ mm s WIN 19.90 15.38 4.75 0.90 1.90 3.40 2.98 3.20 MAX 20.10 15.42 4.35 1.10 2.10 3.60 3.02 3.40 0.595 0.605 19.95 20.25 1.98 10.89 4.95 3.35 1.995 5.90 9.90 2.02 10.91 5.05 3.45 2.005 6.10 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Darlington Power Transistor 2SB1647 ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA ; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc=-10A; lB=-10mA -2.5 V VeE(sat) Base-Emitter Saturation Voltage lc=-10A;l B =-10mA -3.0 V ICBO Collector Cutoff Current V C B=-150V;I E =0 -100 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -100 uA IIFE DC Current Gain lc=-10A;V C E=-4V COB Output Capacitance l E =0;V C B=-10V;f, es t=1MHz 320 PF Current-Gain— Bandwidth Product I E =2A;V C E =-12V 45 MHz 0.7 ns 1.6 us 1.1 us fr CONDITIONS MIN TYP. MAX -150 UNIT V 5000 Switching Times ton Turn-on Time tstg Storage Time Fall Time tf • Vcc= -40V, RL= 4 0 , lc=-10A;l B i=-lB2=-10mA, hFE Classifications o P Y 5000-12000 6500-20000 15000-30000