, One. J Cs TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1908 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2. COLLECTOR V<BR)CEO=-120V(Min) 3. MITER • Good Linearity of hF£ 1 • Complement to Type 2SC5100 2 TO-3PML package 3 APPLICATIONS • Designed for audio and general purpose applications j© ,-, @|j';;''' I© V, *-Q ¥ i ° '-' ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V -»"«-j -*H- -~i.~-0 N-— mm Emitter-Base Voltage -6 V Ic Collector Current-Continuous -8 A IB Base Current-Continuous -3 A PC Collector Power Dissipation @ TG=25'C 75 W Tj Junction Temperature 150 -C -55-150 r VEBO Tstg Storage Temperature Range DIM A B C D F G H J K L N Q R S WIN 19,90 15,90 5.50 0.90 3.30 2.90 5,90 0.595 22.30 1.90 10.80 4.90 3,75 3.20 u 9.90 V 4.70 Z | 1.90 MAX 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0.605 22.50 ^2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1908 ELECTRICAL CHARACTERISTICS Tc-25"C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A -0.5 V ICBO Collector Cutoff Current V CB =-120V;I E =0 -10 uA IEBO Emitter Cutoff Current VEB= -6V; lc= 0 -10 uA HFE DC Current Gain lc= -3A; VCE= -4V COB Collector Output Capacitance lE=0;V CB =-10V;f=1MHz 300 pF Current-Gain— Bandwidth Product I E =0.5A;V C E=-12V 20 MHz 0.14 us 1.40 us 0.21 us fi -120 V 50 Switching times ton Turn-on Time tstg Storage Time tf lc=-4A, R L =10fi, IB1= -lB2= -0.4A, Vcc= -40V Fall Time classifications o P Y 50-100 70-140 90-180