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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SB1587
Silicon NPN Darlington Power Transistor
DESCRIPTION
• Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min)
• High DC Current Gain-
02
PIN 1.BASE
: hFE= 5000( Min.) @(|c= -6A, VCE=- 4V)
2.COLLECTOR
• Low Collector Saturation Voltage-
3. EMITTER
: VcE(sat)= -2.5V(Max)@ (lc= -6A, IB= -6mA)
• Complement to Type 2SD2438
TO-3PML package
APPLICATIONS
• Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
K
|
i
*
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@TC=25°C
75
W
Tj
Junction Temperature
150
•c
VEBO
mm
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
u
TS|g
Storage Temperature
-55-150
'C
V
z
WIN
19,90
15.90
5.50
0.90
3.30
2.90
5.90
0.595
22.30
1,90
10.80
4.90
3.75
3.20
9.90
4.70
1.90
MAX
20.10
16.10
5.70
1.10
3.50
3.10
6.10
0.605
22.50
2.10
11.00
5.10
3.95
3.40
10.10
4.90
2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Darlington Power Transistor
2SB1587
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= 30mA; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 6A; IB= 6mA
-2.5
V
VeE(sat)
Base-Emitter Saturation Voltage
lc= 6A; IB= 6mA
-3.0
V
ICBO
Collector Cutoff Current
V C B=160V;I E =0
-100
uA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
-100
uA
hFE
DC Current Gain
lc= 6A; VCE= 4V
COB
Output Capadtance
l E -0;VcB=10V;f tes ,= 1MHz
85
pF
Current-Gain— Bandwidth Product
IE=-1A; VCE= 12V
65
MHz
0.7
ns
3.6
us
0.9
V- S
fr
CONDITIONS
MIN
TYP.
MAX
-150
UNIT
V
5000
Switching Times
ton
Turn-on Time
{stg
Storage Time
VCc= 60V, RL= 1 0 Q ,
lc= 6A; l B i=-lB2=6mA,
Fall Time
tf
hFE Classifications
o
P
Y
5000-12000
6500-20000
15000-30000