, L/nc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1607 Silicon PNP Power Transistor DESCRIPTION • Large Collector Current • Satisfactory Linearity of Foward Current Transfer Ratio • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@lc= -5A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw • Complement to Type 2SD2469 ™ PIN 1.BASE 2. COLLECTOR APPLICATIONS 3 -EMITTER 1 2 3 • Designed for power switching and general purpose applications. TO-220F package C -S1 ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER u VALUE UNIT VCBO Collector-Base Voltage -130 V Vceo Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V o Ic Collector Current-Continuous -7 A N - J ' - mm ICM Collector Current-Peak -15 A Collector Power Dissipation @ Ta=25°C 2 W Collector Power Dissipation @ TC=25°C 40 W Junction Temperature 150 •c -55-150 'C PC Tj Tstg Storage Temperature Range Quality Semi-Conductors DIM MIN A 14.95 B 10.00 C 4.40 D 0.75 3.10 F 3.70 H J 0.50 K 13.4 1.10 L N 5.00 q 2.70 R 2.20 2.65 $ u 6.40 MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 Silicon PNP Power Transistor 2SB1607 ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER VcE(sat) Collector-Emitter Saturation Voltage VsE(sat) CONDITIONS MIN TYP. MAX UNIT lc= -5A; IB= -0.25A -0.5 V Base-Emitter Saturation Voltage lc= -5A; IB= -0.25A -1.5 V ICBO Collector Cutoff Current V CB =-100V;I E =0 -10 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -50 uA hpE-1 DC Current Gain lc=-0.1A;V C E=-2V 45 hFE-2 DC Current Gain lc= -3A; VCE= -2V 90 Current-Gain— Bandwidth Product IE= 0.5A; VCE= -10V;f=10MHz fy 260 30 MHz 0.5 us 1.5 us 0.1 us Switching Times ton Turn-on Time tstg Storage Time Fall Time tf hFE.2 Classifications Q P 90-180 130-260 IC=-3A;IB1=-IB2=-0.3A,