NJSEMI 2SB1607

, L/nc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SB1607
Silicon PNP Power Transistor
DESCRIPTION
• Large Collector Current
• Satisfactory Linearity of Foward Current Transfer Ratio
• Low Collector to Emitter Saturation Voltage
: VCE(sat)= -0.5V(Max.)@lc= -5A
• Full-pack Package With Outstanding Insulation,
Which Can Be Installed to The Heat Sink With One Screw
• Complement to Type 2SD2469
™
PIN 1.BASE
2. COLLECTOR
APPLICATIONS
3 -EMITTER
1 2 3
• Designed for power switching and general purpose
applications.
TO-220F package
C -S1
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
u
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
Vceo
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
o
Ic
Collector Current-Continuous
-7
A
N -
J ' -
mm
ICM
Collector Current-Peak
-15
A
Collector Power Dissipation
@ Ta=25°C
2
W
Collector Power Dissipation
@ TC=25°C
40
W
Junction Temperature
150
•c
-55-150
'C
PC
Tj
Tstg
Storage Temperature Range
Quality Semi-Conductors
DIM
MIN
A 14.95
B 10.00
C
4.40
D
0.75
3.10
F
3.70
H
J
0.50
K
13.4
1.10
L
N
5.00
q 2.70
R
2.20
2.65
$
u 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
Silicon PNP Power Transistor
2SB1607
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
VcE(sat)
Collector-Emitter Saturation Voltage
VsE(sat)
CONDITIONS
MIN
TYP.
MAX
UNIT
lc= -5A; IB= -0.25A
-0.5
V
Base-Emitter Saturation Voltage
lc= -5A; IB= -0.25A
-1.5
V
ICBO
Collector Cutoff Current
V CB =-100V;I E =0
-10
uA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-50
uA
hpE-1
DC Current Gain
lc=-0.1A;V C E=-2V
45
hFE-2
DC Current Gain
lc= -3A; VCE= -2V
90
Current-Gain— Bandwidth Product
IE= 0.5A; VCE= -10V;f=10MHz
fy
260
30
MHz
0.5
us
1.5
us
0.1
us
Switching Times
ton
Turn-on Time
tstg
Storage Time
Fall Time
tf
hFE.2 Classifications
Q
P
90-180
130-260
IC=-3A;IB1=-IB2=-0.3A,