2N5672 MECHANICAL DATA NPN HIGH POWER SILICON TRANSISTOR Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) Features • • 2 6 .6 7 (1 .0 5 0 ) m a x . 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) High Current & High Speed Switching High Reliability Screening Options Available Including:• Semelab Space Level discrete component processing which is based on conformance & screening levels of MIL-PRF-19500 & ESCC 5000 Applications 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . For high reliability general purpose applications, where high speed & high current switching and amplification is required. TO-3 (TO-204AE) Pin 1 – Base Pin 2 – Emitter Case – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Power Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Operating and Storage Temperature Range Junction Temperature 150V 120V 7.0V 30A 10A 140W 6W -65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7506, ISSUE 2 2N5672 THERMAL DATA Rthj-case Thermal Resistance Junction - Case Max ELECTRICAL CHARACTERISTICS (T case Parameter ICEX Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector-Emitter Cut-Off Current ICEO V(BR)CER * 1.25 °C/W Min. Typ. Max. Unit =25°C unless otherwise stated) Test Conditions IC = 200mA IB = 0 120 - - IC = 200mA VBE = -1.5V 150 - - IC = 200mA RBE = 50 140 - - VCE = 135V VBE = -1.5V - - 10 Collector-Emitter Cut-Off Current VCE = 80V IB = 0A - - 10 IEBO Emitter-Base Cut-Off Current VEB = 7.0V IC = 0 - - 10 hFE* DC Current Gain IC = 20A VCE = 5.0V 20 - - IC = 15A VCE = 2.0V 20 - 100 VBE* IC = 15A VCE = 5.0V - - 1.6 IC = 15A IB = 1.2A - - 0.75 VBE sat* Base Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 15A IB = 1.2A - - 1.5 fT Transition Frequency IC = 2A VCE = 10V 50 - - MHz Cobo Collector Base Capacitance - - 900 pF Ton Switching Time - - 0.5 Ts Switching Time - - 0.5 Toff Switching Time - - 1.5 V(BR)CEX V(BR)CER VCE sat* f = 5MHz IE = 0 VCB = 10V f = 1.0MHz IC = 15A VCC = 30V IB1 = IB2 = 1.2A V mA V µS * Pulse test tp = 300µs, δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7506, ISSUE 2