APT30GT60AR
600V
40A
Thunderbolt IGBT
TO-3
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 150KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
(TO-204AE)
C
G
• Hermetic Package
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
UNIT
APT30GT60AR
Y
R
A
N
I
M
I
L
E
R
P
V CES
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KW)
600
V EC
Emitter-Collector Voltage
15
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
40
I C2
Continuous Collector Current @ TC = 90°C
30
Volts
±20
1
80
Amps
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
60
EAS
Single Pulse Avalanche Energy
2
65
mJ
PD
Total Power Dissipation
160
Watts
TJ,TSTG
TL
@ TC = 25°C
-55 to 150
Operating and Storage Junction Temperature Range
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C)
600
RBVCES
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA)
-15
VGE(TH)
Gate Threshold Voltage
BVCES
VCE(ON)
I CES
I GES
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
TYP
MAX
UNIT
3
4
5
Volts
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
40
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
1000
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5971 Rev - 5-2000
Characteristic / Test Conditions
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
APT30GT60AR
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
MIN
Capacitance
VGE = 0V
TYP
155
VCE = 25V
f = 1 MHz
90
Gate Charge
VGE = 15V
140
I C = I C2
12
Resistive Switching (25°C)
14
VGE = 15V
55
VCC = 0.8VCES
I C = I C2
Y
R
A
N
I
M
I
L
E
R
P
18
Turn-off Delay Time
30
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Fall Time
25
I C = I C2
Eoff
Turn-off Switching Energy
1.2
Ets
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
mJ
1.7
18
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
30
VGE = 15V
I C = I C2
R G = 10W
20
Ets
Total Switching Losses
TJ = +25°C
1.3
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
260
Fall Time
tf
ns
300
0.5
td(off)
ns
140
RG = 10W
R G = 10W
tr
nC
190
TJ = +150°C
td(on)
pF
60
VCC = 0.5VCES
Turn-on Delay Time
Rise Time
UNIT
1600
Turn-on Switching Energy
Eon
MAX
mJ
6
S
THERMAL CHARACTERISTICS
050-5971 Rev - 5-2000
Symbol
Characteristic
RQJC
Junction to Case
RQJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.78
°C/W
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 144µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
40