2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range. • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz • High Output Power: 17.5␣ dBm Typical P 1 dB at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1] 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol NFO GA P1 dB Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA G1 dB Power Output @ 1 dB Gain Compression: VDS = 4 V, IDS = 40 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA gm Transconductance: VDS = 2.5 V, VGS = 0 V IDSS Saturated Drain Current: VDS = 2.5 V, VGS = 0 V VP Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA Units f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz dB dB dB dB dB 5-36 8.0 Typ. Max. 1.2 1.4 1.6 11.5 9.0 7.5 f = 12.0 GHz dBm 17.5 f = 12.0 GHz 8.5 dB 1.6 mmho 25 55 mA 40 50 90 V -4.0 -1.5 -0.5 Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”. 5965-8724E Min. ATF-13336 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.5mW/°C for TCASE > 85°C. 4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Absolute Maximum[1] +5 -4 -6 IDSS 225 175 -65 to +175 Units V V V mA mW °C °C θjc = 400°C/W; TCH = 150°C 1␣ µm Spot Size[5] Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel Reel Size ATF-13336-TR1 ATF-13336-STR 1000 10 7" strip ATF-13336 Noise Parameters: VDS = 2.5 V, IDS = 20 mA Γopt Freq. GHz NFO dB Mag Ang RN/50 4.0 6.0 8.0 12.0 14.0 0.8 1.1 1.2 1.4 1.6 .63 .47 .40 .52 .57 93 138 -153 -45 -2 .27 .10 .20 .88 1.3 ATF-13336 Typical Performance, TA = 25°C 14 14 10 2.5 6 NFO NFO (dB) NFO (dB) 1.5 1.0 0.5 8.0 10.0 12.0 14.0 16.0 FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25°C. 20 MSG 10 8 2.0 0 6.0 GA 8 GAIN (dB) GA 12 GA (dB) 12 25 GA (dB) 16 15 MAG 10 2.0 |S21|2 NFO 5 1.5 1.0 0 10 20 30 40 50 60 IDS (mA) Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2.5V, f = 12.0 GHz. 5-37 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA. Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .96 .88 .86 .79 .69 .60 .54 .56 .56 .58 .63 .65 .66 .70 .72 Ang. -51 -75 -96 -117 -142 -178 141 103 74 44 20 3 -7 -19 -34 dB 10.6 10.3 10.1 9.9 10.2 10.1 9.8 8.9 8.3 7.6 6.7 6.0 5.5 4.9 4.4 S21 Mag. 3.39 3.28 3.19 3.13 3.22 3.21 3.10 2.80 2.60 2.39 2.17 2.00 1.89 1.76 1.66 Ang. 127 106 86 66 46 21 -4 -26 -48 -68 -90 -108 -126 -144 -175 A model for this device is available in the DEVICE MODELS section. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 133 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) DRAIN 3 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-38 dB -27.1 -23.4 -22.6 -20.6 -18.9 -17.6 -17.3 -16.7 -16.5 -16.8 -17.5 -18.3 -18.9 -19.0 -19.2 S12 Mag. .044 .060 .074 .093 .114 .132 .137 .147 .150 .145 .133 .121 .114 .112 .110 S22 Ang. 57 33 25 12 1 -18 -33 -48 -63 -78 -95 -107 -121 -129 -142 Mag. .61 .58 .57 .54 .49 .42 .31 .21 .09 .07 .16 .19 .19 .16 .14 Ang. -41 -51 -57 -65 -79 -97 -112 -121 -145 89 43 21 -4 -28 -32