AGILENT ATF

2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
Features
Description
• Low Noise Figure:
1.8␣ dB Typical at 12␣ GHz
The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropriate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dB Typical at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
36 micro-X Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
P1 dB
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
G1 dB
Power Output @ 1 dB Gain Compression:
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
gm
Transconductance: VDS = 2.5 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
Units
Min.
Typ. Max.
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
dB
dB
dB
dB
dB
dB
f =12.0 GHz
dBm
17.5
f = 12.0 GHz
dB
8.5
8.0
1.5
1.8
2.1
11.5
9.0
7.0
2.2
mmho
25
55
mA
40
50
90
V
-4.0
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
5-39
5965-8722E
ATF-13736 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Absolute
Maximum[1]
+5
-4
-6
IDSS
225
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
θjc = 400°C/W; TCH = 150°C
1␣ µm Spot Size[5]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-13736-TR1
ATF-13736-STR
1000
10
7"
strip
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.5 mW/°C for
TCASE > 85°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
4.0
6.0
8.0
12.0
14.0
1.1
1.3
1.5
1.8
2.1
.71
.55
.46
.50
.52
102
147
-144
-40
-2
.10
.07
.19
.88
1.17
ATF-13736 Typical Performance, TA = 25°C
25
16
25
2.0
8
1.5
6
20
MSG
MSG
15
MAG
10
NFO
GAIN (dB)
NFO (dB)
10
20
GAIN (dB)
12
GA
GA (dB)
14
15
MAG
MSG
10
|S21|2
|S21|2
1.0
5
5
0.5
0
6.0
8.0
10.0
12.0 14.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
0
2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
5-40
0
2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
S11
Mag.
.94
.86
.84
.77
.68
.59
.54
.56
.58
.60
.64
.68
.70
.72
.74
Ang.
-46
-70
-90
-110
-135
-170
149
112
86
63
39
20
9
-1
-17
dB
11.0
10.2
9.8
9.6
9.9
9.9
9.5
8.8
8.1
7.6
7.0
6.4
6.0
5.2
4.6
S21
Mag.
3.56
3.23
3.08
3.02
3.14
3.13
2.99
2.75
2.53
2.41
2.24
2.08
1.99
1.83
1.70
Ang.
128
109
91
69
51
24
-1
-22
-43
-66
-90
-106
-130
-145
-177
dB
-26.4
-25.2
-23.1
-20.9
-19.3
-18.0
-17.6
-16.9
-16.4
-16.5
-17.1
-17.6
-18.0
-18.2
-18.4
S12
Mag.
.048
.055
.070
.090
.109
.126
.132
.143
.152
.149
.140
.132
.126
.123
.120
S22
Ang.
55
40
31
18
7
-12
-27
-43
-58
-73
-81
-90
-97
-111
-129
Mag.
.59
.57
.56
.52
.47
.39
.30
.19
.11
.09
.15
.19
.19
.15
.11
Ang.
-36
-47
-55
-63
-75
-92
-112
-121
-140
92
47
21
-3
-26
-34
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 40 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
S11
Mag.
.88
.76
.68
.56
.42
.37
.47
.57
.63
.69
.77
.82
.85
.83
.81
Ang.
-44
-68
-90
-113
-145
161
116
90
70
51
33
21
13
1
-17
dB
13.5
13.0
12.4
12.0
11.8
11.5
10.5
9.4
8.9
7.9
7.1
6.0
5.4
4.8
4.4
S21
Mag.
4.73
4.47
4.19
4.00
3.90
3.74
3.36
2.96
2.77
2.47
2.26
2.00
1.86
1.73
1.65
Ang.
130
107
86
66
44
20
-3
-23
-41
-63
-82
-101
-117
-134
-154
A model for this device is available in the DEVICE MODELS section.
5-41
dB
-26.4
-24.9
-22.5
-21.0
-19.8
-18.6
-17.9
-17.2
-17.4
-17.7
-18.0
-18.6
-19.2
-19.7
-19.8
S12
Mag.
.048
.057
.075
.089
.102
.117
.128
.138
.135
.131
.126
.118
.110
.104
.102
S22
Ang.
64
52
39
32
21
9
-5
-19
-28
-39
-52
-65
-75
-83
-103
Mag.
.67
.61
.57
.52
.44
.31
.17
.05
.06
.17
.26
.35
.39
.41
.42
Ang.
-28
-39
-46
-52
-61
-75
-95
-143
128
100
75
62
54
49
41
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
2.11 (0.083) DIA.
4
137
DRAIN
3
GATE 1
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
2
2.54
(0.100)
0.508
(0.020)
0.15 ± 0.05
(0.006 ± 0.002)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-42