AGILENT ATF

0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10100
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
VDS = 2 V, IDS␣ =␣ 25 mA
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12␣ GHz frequency range.
Chip Outline
G
• High Associated Gain:
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P1 dB at 4 GHz
Description
The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
S
G
D
S
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
Parameters and Test Conditions[1]
Optimum Noise Figure: VCE = 2 V, IDS = 25 mA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
Units
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
Min.
Typ. Max.
0.4
0.55
0.8
12.0
0.7
17.0
14.0
12.0
P1 dB
Power Output @ 1 dB Gain Compression
VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dBm
21.0
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
15.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
mmho
80
140
mA
70
130
180
V
-3.0
-1.3
-0.8
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer.
5-19
5965-8702E
ATF-10100 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Absolute
Maximum[1]
+5
-4
-7
IDSS
430
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4.4 mW/°C for
TCASE > 78°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
θjc = 225°C/W; TCH = 150°C
1 µm Spot Size[4]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-10100-GP3
50
18
ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 mA
Mag
Ang
1.0
2.0
4.0
6.0
8.0
0.4
0.4
0.55
0.8
1.0
0.78
0.55
0.39
0.41
0.46
13
27
65
105
144
0.40
0.29
0.22
0.16
0.10
GA
2.0
RN/50
NFO (dB)
NFO
dB
12
1.5
9
1.0
6
GA (dB)
Γopt
Freq.
GHz
15
NFO
0.5
0
2.0
4.0
6.0
8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
ATF-10100 Typical Performance, T A = 25°C
16
NFO (dB)
1.5
20
20
MSG
MAG
|S21|2
0.5
MSG
MAG
|S21|2
10
10
1.0
GAIN (dB)
10
GAIN (dB)
12
GA
GA (dB)
14
30
30
NFO
0
0
10
20
30
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2V, f = 4.0 GHz.
0
1.0
2.0
4.0
6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
5-20
0
1.0
2.0
4.0
6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA = 25°C, VDS = 2 V, IDS␣ =␣ 25 mA
Freq.
MHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
S11
Mag.
.93
.83
.78
.72
.70
.68
.71
.72
.71
.70
.70
.70
.70
.70
.73
.77
.76
.77
Ang.
-46
-78
-94
-104
-120
-139
-157
168
-177
175
167
162
159
155
149
138
134
134
dB
17.7
15.6
13.9
12.4
11.2
10.0
8.6
7.4
6.5
6.0
5.5
5.0
4.5
4.1
3.9
3.2
1.8
1.3
S21
Mag.
7.63
6.08
4.97
4.18
3.65
3.18
2.69
2.35
2.12
1.99
1.88
1.77
1.68
1.61
1.56
1.45
1.23
1.16
Ang.
148
127
114
103
92
80
69
60
53
46
38
31
25
20
14
5
0
-1
dB
-25.5
-21.4
-19.8
-18.7
-17.9
-17.6
-17.5
-17.5
-17.4
-16.9
-16.6
-16.3
-15.8
-15.5
-15.0
-14.7
-14.4
-13.9
S12
Mag.
.053
.085
.102
.116
.127
.132
.133
.133
.135
.143
.148
.154
.162
.168
.177
.184
.190
.201
S22
Ang.
64
52
45
41
36
31
25
22
19
17
15
13
11
10
8
6
5
4
Mag.
.33
.31
.30
.29
.25
.19
.18
.20
.22
.22
.23
.24
.26
.28
.30
.32
.35
.38
Ang.
-56
-63
-72
-80
-90
-113
-156
-178
174
169
164
153
143
133
123
119
114
106
Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 70 mA
Freq.
MHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
S11
Mag.
.87
.74
.72
.67
.67
.68
.73
.74
.75
.75
.75
.74
.74
.75
.76
.77
.79
.80
Ang.
-60
-96
-112
-122
-137
-154
-168
-177
175
166
156
150
148
145
140
135
130
125
dB
20.6
17.5
15.2
13.4
12.0
10.5
9.0
7.7
6.8
6.2
5.6
5.1
4.6
4.2
3.9
3.2
1.8
1.3
S21
Mag.
10.72
7.50
5.77
4.68
3.97
3.36
2.81
2.44
2.19
2.04
1.90
1.79
1.69
1.62
1.57
1.45
1.23
1.16
Ang.
136
113
101
91
81
70
61
54
47
39
32
25
19
14
9
-1
-6
-6
5-21
dB
-26.4
-23.5
-22.2
-21.3
-20.6
-20.3
-20.1
-19.8
-19.6
-18.9
-18.4
-17.9
-16.9
-16.2
-15.7
-15.5
-15.3
-14.4
S12
Mag.
.048
.067
.078
.086
.093
.097
.099
.102
.105
.113
.120
.128
.143
.155
.164
.168
.171
.191
S22
Ang.
55
43
39
38
36
35
33
31
31
29
27
26
25
24
21
18
18
18
Mag.
.33
.29
.28
.27
.24
.17
.13
.12
.12
.13
.13
.14
.15
.17
.21
.24
.28
.32
Ang.
-59
-66
-69
-72
-77
-95
-127
-159
-165
-171
-177
173
166
154
142
133
125
117
ATF-10100 Chip Dimensions
218 µm
8.58 mil
218 µm
8.58 mil
G
G
32 µm
1.26 mil
163 µm
6.42 mil
S
D
S
279.4 µm
11 mil
218 µm
8.58 mil
304.8 µm
12 mil
Note: Die thickness is 4.5 mil, and backside metallization is
200 Å Ti and 2000 Å Au.
5-22