0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features Description • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. • Low Bias: VDS = 2 V, IDS = 25␣ mA • High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz • Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available [1] 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol NFO GA Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA Gain @ NFO; VDS = 2 V, IDS = 25 mA Units f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB Min. Typ. Max. 0.9 1.2 1.4 12.0 1.4 16.5 13.0 10.5 P1 dB Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA f = 4.0 GHz dBm 20.0 G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0 gm Transconductance: VDS = 2 V, VGS = 0 V IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V VP Pinchoff Voltage: VDS = 2 V, IDS = 1 mA mmho 70 140 mA 70 130 180 V -4.0 -1.3 -0.5 Note: 1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.” 5-29 5965-8698E ATF-10736 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Total Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Absolute Maximum[1] +5 -4 -7 IDSS 430 175 -65 to +175 Units V V V mA mW °C °C θjc = 350°C/W; TCH = 150°C 1µm Spot Size[5] Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel Reel Size ATF-10736-TR1 ATF-10736-STR 1000 10 7" STRIP Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.9 mW/°C for TCASE > 25°C. 4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. For more information, see “Tape and Reel Packaging for Semiconductor Devices.” ATF-10736 Noise Parameters: VDS = 2 V, IDS = 25 mA Γopt Freq. GHz NFO dB Mag Ang RN/50 1.0 2.0 4.0 6.0 8.0 0.8 0.9 1.2 1.4 1.7 0.88 0.75 0.48 0.46 0.53 41 85 159 -122 -71 0.52 0.27 0.08 0.08 0.43 ATF-10736 Typical Performance, TA = 25°C 30 15 25 25 12 1.5 9 1.0 6 NFO 0.5 0 2.0 20 15 |S21|2 10 MAG 5 4.0 6.0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25°C. 0 0.5 MSG 20 MSG GAIN (dB) 2.0 GA (dB) 30 GAIN (dB) NFO (dB) GA 18 15 |S21|2 MAG MSG 10 5 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA. 5-30 0 0.5 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 4 V, IDS = 70 mA. Typical Scattering Parameters, Common Source, Z O = 50 Ω, TA = 25°C, VDS = 2 V, IDS␣ =␣ 25 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .96 .92 .77 .59 .49 .43 .49 .57 .68 .73 .77 .82 .85 Ang. -20 -40 -76 -107 -136 -179 138 106 81 62 47 36 22 dB 15.4 15.2 13.8 12.5 11.2 10.0 8.6 7.3 5.6 4.2 3.0 1.0 -0.2 S21 Mag. 5.90 5.77 4.92 4.20 3.64 3.15 2.74 2.32 1.92 1.62 1.41 1.12 0.98 Ang. 162 144 109 83 57 32 8 -13 -32 -50 -66 -81 -97 dB -32.4 -26.7 -21.3 -20.0 -17.3 -15.5 -14.9 -14.8 -14.7 -14.8 -14.8 -14.6 -14.5 S12 Mag. .024 .046 .086 .111 .137 .167 .179 .183 .185 .183 .182 .186 .189 S22 Ang. 77 66 52 40 24 9 -5 -18 -33 -40 -52 -67 -75 Mag. .50 .48 .39 .33 .26 .14 .05 .19 .33 .42 .46 .50 .51 Ang. -10 -21 -34 -45 -61 -65 22 60 57 46 38 27 15 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 70 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .90 .79 .57 .43 .36 .35 .47 .65 .77 .83 .86 .87 .91 Ang. -32 -53 -96 -129 -163 156 110 78 58 44 30 16 1 dB 19.0 18.0 15.5 13.3 11.6 10.1 8.8 7.0 5.1 3.5 2.4 1.1 0.1 S21 Mag. 8.95 7.96 5.99 4.60 3.78 3.21 2.76 2.23 1.80 1.50 1.32 1.13 0.99 Ang. 147 128 90 64 39 16 -11 -36 -56 -72 -88 -106 -123 A model for this device is available in the DEVICE MODELS section. 5-31 dB -34.9 -28.6 -22.5 -19.5 -17.3 -15.6 -14.5 -14.2 -14.1 -14.2 -14.5 -14.8 -15.3 S12 Mag. .018 .037 .075 .106 .136 .166 .189 .196 .198 .195 .188 .182 .171 S22 Ang. 77 70 56 43 31 14 -5 -23 -38 -48 -64 -77 -91 Mag. .40 .38 .34 .31 .28 .22 .15 .28 .42 .51 .55 .60 .65 Ang. -7 -17 -38 -50 -51 -45 -4 35 37 33 26 18 7 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 107 DRAIN 3 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-32