2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 1.0 W @ TA = 25 C O 2.5 W @ TC = 75 C O CHARACTERISTICS SYMBOL NONE O TA = 25 C TEST CONDITIONS BVCEO IC = 5.0 mA BVCER IC = 5.0 mA BVCBO IC = 100 µA ICEX 1 = Emitter 2 = Base 3 = Collector MINIMUM RBE = 10Ω VCE = 35 V VBE = -1.50 V VCE = 15 V VBE = -1.50 V TC = 150 C TYPICAL MAXIMUM UNITS 20 V 40 V 40 V O 5.0 mA ICEO VCE = 15 V 20 µA IEBO VEB = 3.0 V 100 µA 220 --- 0.5 V VCE = 15 V IC = 50 mA 40 VCE = 5.0 V IC = 360 mA 5.0 VCE(SAT) IC = 100mA IB = 10 mA ft VCE = 15 V IC = 50 mA COB VCB = 15 V NF VCE = 15 V IC = 10 mA RG = 50 Ω f = 200 MHz Gve VCC = 15 V IC = 50 mA Pin VCC = 15 V IC = 50 mA Rs = 50 Ω f = 200 MHz hFE f = 200 MHz MHz 1200 f = 1.0 MHz f = 50 to 216 MHz 3.5 pF dB 3.0 dB 1.1 0.1 W A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.