ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for PACKAGE STYLE .280 4L PILL FEATURES: A • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS ØC IC 0.75 A VCBO 36 V D E VCER 16 V VCES 36 V VEBO PDISS 4.0 V 5.0 W @ TC = 25 C TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θ JC 35.0 OC/W SYMBOL MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 1.055 / 26.80 B O CHARACTERISTICS DIM F C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 ORDER CODE: ASI10678 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 16 V BVCES IC = 5 mA 36 V BVEBO IE = 1 mA 4.0 V ICBO VCB = 15 V ICER VCE = 10 V RBE = 80 Ω hFE VCE = 5.0 V IC = 100 mA Cob VCB = 7.5 V PG ηC VCC = 12.5 V 40 f = 1.0 MHz POUT = 2.0 W f = 470 MHz 11.5 mA 0.5 mA 200 --- 10 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 % REV. A 1/1