BLY92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92A is an NPN power transistor designed for 138-175 MHz VHF communications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter, 28 V operation • PG = 10 dB at 10W/175 MHz • Omnigold™ Metalization System • High VSWR capability E B D H I J 65 V VCEO 35 V VEBO 4.0 V #8-32 UNC-2A F 13.0 W O MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 .450 / 11.43 .490 / 12.45 .100 / 2.54 TJ -65 ° C to +200 °C G H .090 / 2.29 TSTG -65 °C to +150 °C I .155 / 3.94 θJC 13.5 °C/W CHARACTERISTICS G E VCBO .175 / 4.45 .750 / 19.05 J TC = 25°C NONETEST CONDITIONS SYMBOL E ØC 1.0 A PDISS C B MAXIMUM RATINGS IC A MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 30 V PG ηC VCC = 28 V PIN = 1.0 W IC = 200 mA 5.0 f = 1.0 MHz POUT = 10 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 200 --- 15 pF dB % REV. A 1/1