AVD035P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL (A) The ASI AVD035P is a medium power Class C transistor for pulsed LBand avionics, DME/TACAN Applications. A C .100x45° C B FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System B B ØG E D E F MAXIMUM RATINGS 3.0 A PEAK IC VCB PDISS 55 V 100 W PEAK TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.0 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .195 / 4.95 .205 / 5.21 C 1.000 / 25.40 D .004 / 0.10 .007 / 0.18 E .050 / 1.27 .065 / 1.65 MAXIMUM .145 / 3.68 F .275 / 6.99 G .285 / 7.21 ORDER CODE: ASI10559 TC = 25 °C NONETEST CONDITIONS SYMBOL DIM BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V PIN = 3.0 W RBE = 10 Ω IC = 500 mA POUT = 35 W MINIMUM TYPICAL MAXIMUM V 65 V 3.5 V 15 f = 1025 - 1150 MHz UNITS 65 10.7 43 11.2 48 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 120 --dB % REV. C 1/1