MRF901 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF901 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • High Gain • Common Emitter MAXIMUM RATINGS IC 30 mA VCBO 25 V VCEO 15 V VEBO 2.0 V PDISS 0.375 W @ TC = 75 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C θJC 200 °C/W CHARACTERISTICS SYMBOL Leads 1 and 3 = Emitter 2 = Collector 4 = Base TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 0.1 mA 25 V BVCEO IC = 1.0 mA 15 V BVEBO IE = 0.1 mA 2.0 V ICBO VCB = 15 V hFE VCE = 5.0 V Ccb VCB = 10 V fT VCE = 10 V NFMIN VCE = 6.0 V 50 nA 80 200 --- f = 1.0 MHz 0.40 1.0 pF IC = 15 mA f = 1.0 GHz 4.5 IC = 15 mA f = 1.0 GHz 2.0 IC = 5.0 mA 30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. GHz 2.5 dB REV. A 1/1