ALN68135 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN68135 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. PACKAGE STYLE SS35 FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • S21 2 = 12 dB Typical @ 2 GHz • Replacement for NE68135 MAXIMUM RATINGS IC 40 mA VCBO 20 V VCEO 12 V VEBO 1.5 V PDISS 290 mW @ TA ≤ 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 600 C/W O O O O O O CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8.0 V 200 nA IEBO VEB = 1.0 V 1.0 µA hFE VCE = 8.0 V 250 --- COB VCB = 10 V 0.7 pF ft S21 2 NF GA IC = 7.0 mA 50 0.2 VCE = 8.0 V IC = 20 mA f = 1.0 GHz 8.0 9.0 GHz VCE = 8.0 V IC = 20 mA f = 2.0 GHz 9 11 dB VCE = 8 V IC = 7.0 mA f = 2.0 GHz 11 1.6 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.3 dB REV. A 1/1