AT41470 NPN SILICON BIPOLAR TRANSISTOR DESCRIPTION: The ASI AT41470 is a Common Emitter Device Designed for low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. PACKAGE STYLE MAXIMUM RATINGS IC 60 mA VCEO 12 V VCBO 20 V VEBO 1.5 V PDISS 500 mW @ TC = 25°C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C CHARACTERISTICS SYMBOL 1 = BASE 2 & 4 = EMITTER 3 = COLLECTOR O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8.0 V 200 Na IEBO VEB = 1.0 V 1.0 µA hFE VCE = 8.0 V 300 --- CCB VCB = 8.0 V ft VCE = 8.0 V VCE = 8.0 V S21E 2 P1dB G1dB VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V NFO IC = 10 mA 30 150 f = 1.0 MHz 0.2 pF IC = 25 mA f = 1.0 GHz 8.0 GHz IC = 25 mA f = 2.0 GHz 12.0 f = 4.0 GHz 6.5 f = 2.0 GHz 19.0 f = 4.0 GHz 18.5 f = 2.0 GHz 15.0 f = 4.0 GHz 10.5 f = 1.0 GHz 1.3 f = 2.0 GHz 1.6 f = 4.0 GHz 3.0 IC = 25 mA IC = 25 mA IC = 10 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB dBm dB 1.9 dB REV. A 1/1