ASI NE64535

NE64535
NPN SILICON LOW NOISE RF TRANSISTOR
DESCRIPTION:
The ASI NE64535 is a Common
Emitter Device Designed for Low Noise
Class A Amplifier Applications up to 4.0
GHz.
PACKAGE STYLE .085 4L SQ
FEATURES INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz
•
S21E2 = 11 dB Typical @ 2 GHz
• Hermetic Ceramic Package
MAXIMUM RATINGS:
IC
60 mA
VCBO
25 V
VCEO
12 V
VEBO
1.5 V
PDISS
300 mW @ TA ≤ 75 C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
85 °C/W
O
CHARACTERISTICS
1 = Collector
2 & 4 = Emitter
3 = Base
ORDER CODE: ASI10752
TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
ICBO
VCB = 8 V
100
nA
IEBO
VEB = 1.0 V
1.0
µA
hFE
VCE = 8.0 V
250
---
CCB
VCB = 10 V
0.6
pF
ft
IC = 7.0 mA
50
VCE = 10 V
IC = 20 mA
f = 1.0 GHz
8.0
8.5
GHz
S21E
VCE = 8 V
IC = 20 mA
f = 2.0 GHz
10
11
dB
NF
GA
VCE = 8 V
IC = 10 mA
f = 2.0 GHz
10
1.6
11
2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
2.5
dB
REV. A
1/1
ERROR! REFERENCE SOURCE NOT FOUND.
A D V A N C E D
S E M I C O N D U C T O R,
I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004