NE56787 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: PACKAGE STYLE .100 2L The ASI NE56787 is Designed for general purpose and ultra linear small signal amplifier applications up to 4.0 GHz. FEATURES INCLUDE: • Ideal for linear Class-A amplifiers MAXIMUM RATINGS: IC 60 mA VCBO 25 V VCEO 12 V VEBO 2.0 V PDISS 600 mW @ TA ≤ 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 40 °C/W CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 10 V 1.0 µA IEBO VEB = 1.0 V 1.0 µA hFE VCE = 10 V 100 200 --- COB VCB = 10 V 0.44 0.80 pF fs S21 = 0 dB 2 IC = 30 mA 30 f = 1.0 MHz 7.5 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. GHz REV. A 1/1