ASI NE02135

NE02135
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI NE02135 is Designed for
Oscillator and Amplifier Applications
up to 2.0 GHz.
PACKAGE STYLE .100 4LPILL
FEATURES INCLUDE:
• High insertion gain.
• High power gain.
• Low Noise figure
MAXIMUM RATINGS
IC
70 mA
VCBO
25 V
VCEO
12 V
VEBO
3.0 V
PDISS
3.3 W @ TA = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
53 °C/W
Suffix 85 for plastic package and 35 for ceramic package
CHARACTERISTICS
SYMBOL
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
ICBO
VCB = 15 V
1.0
µA
IEBO
VEB = 2.0 V
1.0
µA
hFE
VCE = 10 V
250
---
CCB
VCB = 10 V
1.0
pF
ft
VCE = 10 V
VCE = 10 V
⏐S21⏐
IC = 20 mA
f = 1.0 MHz
0.6
IC = 20 mA
f = 1.0 GHz
4.5
GHz
IC = 20 mA
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
18.5
13
5.7
dB
2
NFMIN
MAG
20
5.0
VCE = 10 V
VCE = 10 V
IC = 3.0 mA
IC = 5.0 mA
f = 0.5 GHz
f = 2.0 GHz
1.5
2.7
VCE = 10 V
IC = 20 mA
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
22
18
11
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
4.0
dB
dB
REV. C
1/1