NE02135 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI NE02135 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE .100 4LPILL FEATURES INCLUDE: • High insertion gain. • High power gain. • Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 53 °C/W Suffix 85 for plastic package and 35 for ceramic package CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 15 V 1.0 µA IEBO VEB = 2.0 V 1.0 µA hFE VCE = 10 V 250 --- CCB VCB = 10 V 1.0 pF ft VCE = 10 V VCE = 10 V ⏐S21⏐ IC = 20 mA f = 1.0 MHz 0.6 IC = 20 mA f = 1.0 GHz 4.5 GHz IC = 20 mA f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz 18.5 13 5.7 dB 2 NFMIN MAG 20 5.0 VCE = 10 V VCE = 10 V IC = 3.0 mA IC = 5.0 mA f = 0.5 GHz f = 2.0 GHz 1.5 2.7 VCE = 10 V IC = 20 mA f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz 22 18 11 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 4.0 dB dB REV. C 1/1