NE02103 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI NE02103 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE .100 4LPILL FEATURES INCLUDE: • High insertion gain, 18.5 dB at 500 MHz. • High power gain, 1.5 dB at 500 MHz. • Low noise figure, 12 dB at 2 GHz. • For JAN level add sufix D MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 350 mW @ TA = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 70 °C/W CHARACTERISTICS SYMBOL 1 = BASE 2&4 = EMITTER 3 = COLLECTOR TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 15 V 1.0 µA IEBO VEB = 2.0 V 1.0 µA hFE VCE = 10 V 250 --- CCB VCB = 10 V 1.0 pF ft VCE = 10 V VCE = 10 V IC = 20 mA 20 f = 1.0 MHz 0.6 IC = 20 mA f = 1.0 GHz 4.5 IC = 20 mA f = 0.5 GHz 18.5 f = 1.0 GHz 13 ⏐S21⏐2 f = 2.0 GHz NFMIN 5.5 dB 6.5 VCE = 10 V IC = 3.0 mA f = 0.5 GHz 1.5 VCE = 10 V IC = 5.0 mA f = 2.0 GHz 2.7 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. GHz 4.5 dB REV. A 1/1