ASI NE02103

NE02103
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI NE02103 is Designed for
Oscillator and Amplifier Applications up to
2.0 GHz.
PACKAGE STYLE .100 4LPILL
FEATURES INCLUDE:
• High insertion gain, 18.5 dB at 500 MHz.
• High power gain, 1.5 dB at 500 MHz.
• Low noise figure, 12 dB at 2 GHz.
• For JAN level add sufix D
MAXIMUM RATINGS
IC
70 mA
VCBO
25 V
VCEO
12 V
VEBO
3.0 V
PDISS
350 mW @ TA = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
70 °C/W
CHARACTERISTICS
SYMBOL
1 = BASE
2&4 = EMITTER
3 = COLLECTOR
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
ICBO
VCB = 15 V
1.0
µA
IEBO
VEB = 2.0 V
1.0
µA
hFE
VCE = 10 V
250
---
CCB
VCB = 10 V
1.0
pF
ft
VCE = 10 V
VCE = 10 V
IC = 20 mA
20
f = 1.0 MHz
0.6
IC = 20 mA
f = 1.0 GHz
4.5
IC = 20 mA
f = 0.5 GHz
18.5
f = 1.0 GHz
13
⏐S21⏐2
f = 2.0 GHz
NFMIN
5.5
dB
6.5
VCE = 10 V
IC = 3.0 mA
f = 0.5 GHz
1.5
VCE = 10 V
IC = 5.0 mA
f = 2.0 GHz
2.7
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
GHz
4.5
dB
REV. A
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