PT3642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC 3.0 A VCE 40 V PDISS 23 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 7.6 °C/W CHARACTERISTICS 1 = EMITTER 3 = COLLECTOR 2 = BASE CASE = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA BVCEX IC = 200 mA BVCBO IC = 500 µA ICEO VCE = 30 V 250 µA IEBO VEB = 4.0 V 250 µA hFE VCE = 5.0 V Cob VCB = 30 V ft VCE = 28 V Pout GP ηC VCE = 28 V VBE = -1.5 V IC = 1.0 A 40 V 65 V 65 V 5.0 --- f = 1.0 MHz IC = 150 mA 20 f = 100 MHz f = 175 MHz 400 13.5 5.8 70 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF MHz W dB % REV. A 1/1