2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60(ISOLATED) FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC 1.5 A VCE 40 V PDISS 11.6 W @ TC = 25 C O O O O O TJ -65 C to +200 C TSTG -65 C to +200 C θJC 15 C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 40 V 65 V 65 V BVCEO IC = 200 mA BVCEX VBE = -1.5 V BVCBO IC = 500 µA ICEO VCE = 30 V 100 µA IEBO VEB = 4.0 V 100 µA hFE VCE = 5.0 V IC = 250 mA VCE(SAT) IC = 500 mA IB = 100 mA Cob VCB = 30 V ft VCE = 28 V IC = 150 mA f = 100 MHz Pout GP η VCE = 28 V Pin = 1.0 W f = 400 MHz IC = 100 mA --- 10 f = 1.0 MHz 500 3.0 4.8 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 V 10 pF MHz W dB % REV. A 1/1