ASI TPR175

TPR175
NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
PACKAGE STYLE
DESCRIPTION:
The ASI TPR175 is a common base
transistor Designed for pulsed systems
in the frequency band 1030-1090 MHz.
FEATURES:
• Common Base
• Internal Matching Network
• PG = 8.0 dB at 175 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
12.5 A
VCES
55 V
VEBO
3.5 V
PDISS
388 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.45 °C/W
CHARACTERISTICS
SYMBOL
1 = Collector 2 = Base 3 = Emitter
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 20 mA
55
V
BVEBO
IE = 5.0 mA
3.5
V
hFE
VCE = 5.0 V
IC = 20 mA
10
---
VCE = 50 V
POUT = 175 W
PG
VSRW
ηC
8.0
9.0
f = 1090 MHz
00:1
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
REV. B
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