ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: A 45° • • • Omnigold™ Metalization System B J IC 2.0 A VCBO 36 V VCER 18 V G H K 37 W @ TC = 25 OC O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 11.6 OC/W SYMBOL #8-32 UNC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 G .245 / 6.22 H O CHARACTERISTICS I F 4.0 V VEBO PDISS E 36 V VCES C D MAXIMUM RATINGS .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10680 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 10 mA 36 V BVEBO IE = 2.0 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V Cob VCB = 12 V PG VCC = 12.5 V IC = 200 mA f = 1.0 MHz PIN = 0.70 W 1.0 mA 20 --- --- --- --- 19 --- pF f = 470 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB REV. A 1/1