AUK STC722D

STC722D
Semiconductor
NPN Silicon Transistor
Description
• General purpose amplifier
• D-PAK for surface mount applications
Features
• PC(Collector dissipation)=15W
• Low speed switching applications
• Complementary pair with STA723D
Ordering Information
Type NO.
Marking
Package Code
STC722D
STC722
D-PAK
Outline Dimensions
unit :
mm
PIN Connections
1. Base
2. Collector
3. Emitter
KST-D002-001
1
STC722D
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
40
V
Collector-Emitter voltage
VCEO
30
V
Emitter-Base voltage
VEBO
5
V
Collector current
IC
3
A
Collector dissipation
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
Test Condition
Min.
Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=50µA, IE=0
40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
30
-
-
V
Emitter-Base breakdown voltage
BVEBO
IC=50µA, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=20V, IE=0
-
-
1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
1
µA
DC current gain
hFE
VCE=3V, IC=500mA
80
-
390
VCE=3V, IC=3A
10
-
-
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
-
VCE(sat)
VCE=2A, IC= 200mA
-
0.5
0.8
V
fT
VCE=5V, IC=500mA,
f=1MHz
-
120
-
MHz
VCB=10V, IE=0, f=1MHz
-
13
-
pF
Cob
* : hFE rank / O : 80~218, Y : 120~270, G : 180~390
KST-D002-001
2
STC722D
Electrical Characteristic Curves
Fig. 1 hFE - IC
Fig. 3 fT - IC
Fig. 2 VCE(sat) - IC
Fig. 4 COb - VR
KST-D002-001
3