AUK STB1132

STB1132
Semiconductor
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : VCE(sat)=-0.2V(Typ.)
• Complementary pair with STD1664
Ordering Information
Type NO.
Marking
STB1132
Package Code
SOT-89
A1
: hFE rank, monthly code
Outline Dimensions
unit :
4.0
0.50±0.1
2.5
mm
-0.3
+0.5
-0.3
+0.2
1.00±0.3
KST-8001-002
-0.02
+0.04
0.42
0~0.1
1.5
-0.1
+0.2
0.42±0.05
1
0.15 Typ.
2
0.52±0.05
4.5
-0.1
+0.2
1.82±0.05
3
PIN Connections
1. Base
2. Collector
3. Emitter
1
STB1132
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-40
V
Collector-Emitter voltage
VCEO
-32
V
Emitter-Base voltage
VEBO
-5
V
IC
-1
A
PC
0.5
Collector current
Collector dissipation
*
W
PC
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-50µA, IE=0
-40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-32
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-50µA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-
-
-0.1
µA
Collector cut-off current
ICES
VCE=-30V, IC=0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-
-
-0.1
µA
DC current gain
hFE*
VCE=-3V, IC=-0.1A
100
-
320
-
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC=-500mA, IB=-50mA
-
-0.2
-0.8
V
VCE=-5V, IC=-50mA,
f=30MHz
-
150
-
MHz
VCB=-10V, IE=0, f=1MHz
-
20
30
pF
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
KST-8001-002
2
STB1132
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC - VBE
Fig. 3 IC - VCE
Fig. 5 hFE -
Fig. 4 VCE(sat) - IC
IC
KST-8001-002
3