STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124 TO-92M Outline Dimensions unit : mm 3.0±0.1 4.0±0.1 0.44 REF 14.0±0.40 0.52 REF 1.27 Typ. 2.54±0.1. 2 3 3.0±0.1 3.8 Min. 0.42 Typ. 0.7 Typ. 1 PIN Connections 1. Emitter 2. Collector 3. Base KST-I005-000 1 STA124M Absolute maximum ratings (Ta=25°°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V Collector current IC -1 A Collector dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic (Ta=25°°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -6.5 - - V Collector cut-off current ICBO VCB=-15V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-6V, IC=0 - - -0.1 µA DC current gain hFE VCE=-1V, IC=-100mA 200 - 450 - IC=-500mA, IB=-50mA - -0.2 -0.4 V VCE=-5V, IC=-50mA - 260 - MHz VCB=-10V, IE=0, f=1MHz - 5 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance VCE(sat) fT Cob KST-I005-000 2 STA124M Fig. 1 PC - Ta Fig. 3 hFE-IC Fig. 2 IC - VBE Fig. 4 VCE(sat)-IC KST-I005-000 3