SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F Ordering Information Type NO. Marking SBT5551F FNF Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2097-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 SBT5551F Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100µA, IE=0 180 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 160 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 6 - - V Collector cut-off current ICBO VCB=120V, IE=0 - - 100 nA Emitter cut-off current IEBO VEB=4V, IC=0 - - 100 nA DC current gain hFE (1) VCE=5V, IC=1mA 80 - DC current gain hFE (2) VCE=5V, IC=10mA 80 - DC current gain hFE (3) 250 - VCE=5V, IC=50mA 30 - Collector-Emitter saturation voltage * VCE(sat)(1) IC=10mA, IB=1mA - - 0.2 V Collector-Emitter saturation voltage VCE(sat)(2)* IC=50mA, IB=5mA - - 0.5 V Base-Emitter saturation voltage * VBE(sat)(1) IC=10mA, IB=1mA - - 1 V Base-Emitter saturation voltage VBE(sat)(2)* IC=50mA, IB=5mA - - 1 V fT VCE=10V, IC=10mA 100 - 400 MHz - - 6 pF Transition frequency Collector output capacitance * Cob VCB=10V, IE=0, f=1MHz - : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0% KST-2097-000 2 SBT5551F Electrical Characteristic Curves Fig. 2 IC - VBE Fig. 1 hFE - IC Fig. 3 fT - IC v Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-2097-000 3